Samsung Electronics Co., Ltd.

Chungnam National University Industry Foundation

Jong-seop Lee

Yong-il Kim

Won-Cheol Jung

Gil-Sub Kim

Nam-Jung Kang

Yun-Sung Lee

Young-nam Kwon

Bum-jae Lee

Myoung-hee Han

Jai-kyun Park

Sung-hun Hong

Tae-jung Kim

Provided are hydrophobic layer formed by polymer represented by Formula 1 below and has a weight average molecular weight of about 10,000 to about 500,000 g/mol, hydrophobic layer including the polymer and an electronic articles including the hydrophobic layer: 

Polymer for forming hydrophobic layer, hydrophobic layer comprising the polymer and electronic article comprising the hydrophobic layer

Methods of manufacturing a semiconductor device having an RCAT are provided. The method includes forming a first recess having a first depth formed in an active region of a semiconductor substrate, and a second recess having a second depth that is less than the first depth formed in an isolation layer. The depth of the second recess is decreased by removing the isolation layer from the upper surface of the isolation layer by a desired thickness. A gate dielectric layer is formed on an inner wall of the first recess and a gate is formed on the gate dielectric layer.

Methods of manufacturing semiconductor device having recess channel array transistor

In a semiconductor device having a capacitor and a method of fabricating the same, the semiconductor device comprises a semiconductor substrate having a memory cell array region and a peripheral region, a plurality of capacitors in the memory cell array region each having a storage electrode, a dielectric layer on the storage electrode, and a plate electrode on the dielectric layer, wherein an extended portion of the plate electrode extends in a direction toward the peripheral region, a dummy pattern in the peripheral region at an elevation above the semiconductor substrate that is substantially the same as that of the extended portion of the plate electrode and spaced apart from the extended portion of the plate electrode, an insulating layer formed on the plurality of capacitors in the cell array region and formed on the dummy pattern in the peripheral region, a first metal contact through the insulating layer between the extended portion of the plate electrode and the dummy pattern.

Semiconductor device having a capacitor and a fabrication method thereof

Growing community of inventors

Osan-si, South Korea

Jong-seop Lee