American Microsystems, Inc.

Integrated Silicon Solution Incorporated

Jong Sang Lee

Kyoung Chon Jin

Hounien Chen

A non-volatile memory device includes a sector pass/fail indicator circuit configured to store a pass/fail indicator for each sector in a first block of memory cells. The pass/fail indicator has a first value indicating the respective sector has failed erase verification and has a second value indicating the respective sector has passed erase verification. The sector pass/fail indicator circuit set the respective pass/fail indicators to the second value for one or more sectors in the first block after the respective sectors pass erase verification following a previous block erase operation of the first block. The first block is subjected to subsequent block erase operation where only word lines associated with the sectors having a pass/fail indicator having the first value are biased to the first bias voltage level.

Erase algorithm for flash memory

Desired control of the thickness and composition of a solder coat on the J-leads of an integrated circuit Quad package is obtained by orienting the packages while being solder coated in a 'leads-up' orientation as a series of strips mounting the packages are passed through a solder wave of a wave soldering apparatus on a pallet. The Quad or other shaped integrated circuit or other electronic packages which have leads extending exteriorly thereof, thus have the critical lead crest portions coated with substantially the same solder layer thickness and composition. This permits reliable electrical connections between the crest portions of the leads and printed circuit board metal traces (metallization), particularly in surface mounting of the package to a printed circuit board. An additional feature of the invention is a pallet for holding a series of package-holding elongate frames which pallet is used for conveying the packages through the wave soldering apparatus.

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San Jose, CA, United States of America

Jong Sang Lee