Samsung Electronics Co., Ltd.

Jong-Sang Ban

Jung-Hyun Park

Kwan-heum Lee

Wook-Je Kim

Soon-Wook Jung

A method of manufacturing a semiconductor device includes forming a gate structure on a substrate; forming a sacrificial spacer may be formed on a sidewall of the gate substrate; implanting first impurities into portions of the substrate by a first ion implantation process using the gate structure and the sacrificial spacer as ion implantation masks to form source and drain regions; removing the sacrificial spacer; and implanting second impurities and carbon atoms into portions of the substrate by a second ion implantation process using the gate structure as an ion implantation mask to form source and drain extension regions and carbon doping regions, respectively.

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Hwaseong-si, South Korea

Jong-Sang Ban