Goldstar, Co., Ltd.

Korea Steel Chemical Co., Ltd.

Jong S Kim

Tae Kyung Yoo

Ki Wook Jung

Hyun C Ko

Dong B Shu

Ki T Lee

Won J Choi

The present disclosure relates to a cap with a new structure that can be easily worn by people with long hair. In the cap according to the present disclosure, since a male button () provided on a strap () is coupled to a female button () provided on a side surface of a crown (), the strap () may be configured to be sufficiently long. Accordingly, after a user wears the cap, the strap () may be passed under the hair and fixed using button members (). Thus, there are advantages that it is not necessary to take out the hair by passing the hair through an opening () and it is more convenient to wear the cap.

A semiconductor laser capable of minimizing generation of defects at the interface between grown layers, and a method for fabricating the same. The semiconductor laser is fabricated by forming an n type buffer layer over an n typesemiconductor substrate, forming a first n type clad layer over the buffer layer, forming an active layer over the first clad layer, sequentially growing a first p type clad layer, an etch stop layer, a second p type clad layer, a p type current injection layer, a first p type evaporation-preventing layer and a second p type evaporation-preventing layer, thereby forming a second clad layer, etching the second clad layer, thereby forming a mesa-shaped ridge portion, forming a current shield layer over a portion of the second clad layer exposed upon the etching, etching a portion of the current shield layer disposed over the mesa-shaped ridge portion, thereby forming a current injection region, and exposing a portion of the second evaporation-preventing layer disposed in the current injection region, etching the exposed portion of the second evaporation-preventing layer, thereby exposing a portion of the first evaporation-preventing layer disposed beneath the exposed portion of the second evaporation-preventing layer, and forming a p type cap layer over the entire exposed surface of the resulting structure.

Method for fabricating a semiconductor laser

A semiconductor laser diode of a double hetero structure including a semiconductor substrate, a buffer layer, a clad layer of a first conductivity type, an active layer and a clad layer of a second conductivity type, all layers being sequentially formed over the substrate, characterized by an intermediate layer interposed at at least one of a region between the substrate and the first clad layer and a region between the second clad layer and the cap layer, the intermediate layer being adapted to reduce a series resistance component and thus make a flow of current smooth.

Semiconductor laser diode

A slurry mixture comprising a carboxyl containing polymer of vinylidene monomers having at least one terminal methylene group and a polymerizing solvent is effectively dried by way of: passing said mixture through one or a plurality of preheated double pipe heat exchangers in order to produce a two-phase mixture comprising the pulverized polymer and the vaporized solvent; and, then, feeding said two-phase mixture to a rotary vacuum dryer in order to further remove and separate the vaporized solvent from the powdery polymer.

Growing community of inventors

Dalseo, South Korea

Jong S Kim