Samsung Electronics Co., Ltd.

Jong-Ryul Jun

Jong-Min Lee

Jung-Bum Lim

Eun-A Kim

A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first spacers on respective sidewalls of the first sacrificial patterns, removing the first sacrificial patterns, forming a plurality of second sacrificial patterns, the second sacrificial patterns intersecting with the first spacers, each of the second sacrificial patterns including a line portion and a tab portion, and the tab portion having a width wider than the line portion, forming second spacers on respective sidewalls of the second sacrificial patterns, removing the second sacrificial patterns, and etching the target layer through hole regions, the hole regions defined by the first spacers and the second spacers, to expose the substrate may be provided.

Photomask layout, methods of forming fine patterns and method of manufacturing semiconductor devices

Method of forming fine patterns

A capacitor includes a lower electrode having a curved surface, a first seed on a sidewall of the lower electrode, which the first seed includes a metal silicide and has a shape corresponding to the curved surface of the lower electrode, a dielectric layer on the lower electrode, the dielectric layer covering the first seed, and an upper electrode on the dielectric layer.

Growing community of inventors

Yongin-si, South Korea

Jong-Ryul Jun