Samsung Display Co., Ltd.

Samsung Mobile Display Co., Ltd.

Jong-Ryuk Park

Jin-Wook Seo

Yun-Mo Chung

Ki-Yong Lee

Byoung-Keon Park

Dong-Hyun Lee

Kil-Won Lee

Min-Jae Jeong

Byung-Soo So

Tak-Young Lee

Bo-Kyung Choi

Tae-Hoon Yang

Seung-Kyu Park

Heung-Yeol Na

Jong-Won Hong

Keun Soo Lee

Seok-Rak Chang

Hyunyoung Kim

Young-Dae Kim

Jiyoun Lee

Hyun-Been Hwang

Yang Wan Kim

Ji-Eun Lee

Kwang-Min Kim

Il-Joo Kim

Sungho Kim

Jung-Hyun Cho

Seokje Seong

Gyeongnam Bang

Dae-Woo Lee

Jae-Wan Jung

Yong-Duck Son

Eu-Gene Kang

Sun Youl Lee

Maxim Lisachenko

Jae Beom Choi

Ji-Su Ahn

Ivan Maidanchuk

Won-Bong Baek

Soo-Beom Jo

Sang Hun Oh

Rohyeon Park

Changwook Kang

Sang-Yon Yoon

Wangwoo Lee

Yong-Hwan Kim

Youngbae Jung

Sang-Hyun Yun

Sang Shin Lee

Sang Min Yi

Mi Kyung Kim

Kyung Jin Lee

Hyungjun Lim

Jinwook Seo

Gyoo Chul Jo

Gunwoo Ko

Hyun-Gue Kim

Changho Yi

Taekon Kim

Jung-Woo Ha

Nam-Hee Kim

Jeong-Yeong Jeong

Gyoo Chui Jo

Kii-Won Lee

Ki-Young Lee

Joonhyoung Park

A display device includes a substrate including an organic film layer, a first lower pattern which is disposed on the substrate, includes overlap patterns, first bridges, and second bridges, and has a mesh shape, a second lower pattern which is disposed in a same layer as the first lower pattern, is connected to the first lower pattern, and surrounds the first lower pattern, a first active pattern disposed on the first lower pattern, and a plurality of gate electrodes disposed on the first active pattern and overlapping the overlap patterns.

Display device including lower pattern

A manufacturing method of a display device includes providing a first organic layer in a display area and a non-display area, to cover a pixel electrode and a pad electrode, respectively, providing a first electrode of a light emitting element, in the display area, the first organic layer being between the pixel electrode and the first electrode, after forming the first electrode, removing a portion of the first organic layer which is in the non-display area, to expose the pad electrode from the first organic layer; and providing a light emitting layer of the light emitting element, corresponding to the first electrode.

Display device including galvanic reaction-patterned electrodes, and method of manufacturing the same

A display device includes a substrate; a display area and a non-display area on the substrate, where a plurality of pixels is disposed in the display area, and where the non-display area is in a peripheral area of the display area; an insulating layer disposed on the substrate; a metal wiring disposed on the substrate; and a plurality of dummy patterns disposed in the non-display area. The plurality of dummy patterns includes a plurality of first patterns including an insulating material and a plurality of second patterns including a metal material.

Display device

A display device includes a display layer including an active area including a plurality of pixel areas, and a peripheral area adjacent to the active area, an insulating layer disposed on the display layer, the insulating layer including at least one first opening overlapping the plurality of pixel areas, and at least one second opening in the peripheral area, a refractive index layer disposed on the insulating layer, having a refractive index greater than a refractive index of the insulating layer, and spaced apart from the at least one second opening, and a polarizing layer overlapping the refractive index layer. At least a portion of the polarizing layer overlaps the at least one second opening.

A flexible display device including: a display substrate having a display area and a peripheral area surrounding the display area; a plurality of pixels formed in the display area; a passivation layer covering the pixels from the top to protect the pixels; a polarization film layer provided at the top of the passivation layer and of which an edge is extended outside an edge of the passivation layer; and a film wiring made of a flexible material of which one end is connected to the peripheral area.

Flexible display device

A display device includes a substrate including a display area in which a plurality of pixels is disposed, and a non-display area in a peripheral area of the display area; an insulating layer disposed on the substrate; a metal wiring disposed on the substrate; and a plurality of dummy patterns disposed in the non-display area of the substrate. The plurality of dummy patterns includes a plurality of first patterns including an insulating material and a plurality of second patterns including a metal material.

A display device includes a substrate including a display area in which a plurality of pixels is disposed, and a non-display area near the display area; an insulating layer disposed on the substrate; a metal wiring disposed on the substrate; and a plurality of dummy patterns disposed in the non-display area of the substrate. The plurality of dummy patterns includes a plurality of first patterns including an insulating material and a plurality of second patterns including a metal material.

A method of manufacturing a thin film transistor (TFT) comprises forming a buffer layer, an amorphous silicon layer, and an insulating layer on a substrate; crystallizing the amorphous silicon layer as a polycrystalline silicon layer; forming a semiconductor layer and a gate insulating layer which have a predetermined shape by simultaneously patterning the polycrystalline silicon layer and the insulating layer; forming a gate electrode including a first portion and a second portion by forming and patterning a metal layer on the gate insulating layer. The first portion is formed on the gate insulating layer and overlaps a channel region of a semiconductor layer, and the second portion contacts the semiconductor layer. A source region and a drain region are formed on the semiconductor layer by doping a region of the semiconductor layer. The region excludes the channel region overlapping the gate electrode and constitutes a region which does not overlap the gate electrode. An interlayer insulating layer is formed on the gate electrode so as to cover the gate insulating layer; contact holes are formed on the interlayer insulating layer and the gate insulating layer so as to expose the source region and the drain region, and simultaneously an opening for exposing the second portion is formed. A source electrode and a drain electrode are formed by patterning a conductive layer on the interlayer insulating layer. The source electrode and the drain electrode are electrically connected to the source region and the drain region via the contact holes, and simultaneously the second portion exposed via the opening is removed.

Method of manufacturing thin film transistor, thin film transistor manufactured by using the method, method of manufacturing organic light-emitting display apparatus, and organic light-emitting display apparatus manufactured by using the method

A method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer. The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

Method of fabricating polysilicon layer, thin film transistor, organic light emitting diode display device including the same, and method of fabricating the same

An organic light emitting device includes: a first substrate; a plurality of electrodes on the first substrate; a pixel definition layer on the plurality of electrodes and including a plurality of openings and respectively exposing the plurality of electrodes; and a spacer on the pixel definition layer, wherein the pixel definition layer includes a first opening and a second opening adjacent to each other along a first direction by an interval for each pixel, and a third opening adjacent to the first opening and the second opening by an interval along a second direction crossing the first direction, and wherein the spacer is at a crossing point of a first imaginary line extending in the first direction and passing between the first opening and the third opening and a second imaginary line extending in the second direction and passing between the first opening and the second opening.

Organic light emitting diode display

A method of forming a polycrystalline silicon layer includes forming a first amorphous silicon layer and forming a second amorphous silicon layer such that the first amorphous silicon layer and the second amorphous silicon layer have different film qualities from each other, and crystallizing the first amorphous silicon layer and the second amorphous silicon layer using a metal catalyst to form a first polycrystalline silicon layer and a second polycrystalline silicon layer. A thin film transistor includes the polycrystalline silicon layer formed by the method and an organic light emitting device includes the thin film transistor.

Thin film transistor and organic light emitting device including polycrystalline silicon layer

A display device includes a substrate, a passivation layer on the substrate and including an area having a first thickness and an area having a second thickness less than the first thickness, a first electrode on the passivation layer and including at least two sub-electrodes spaced apart from each other by a slit having two ends, a light emitting layer on the first electrode, and a second electrode on the light emitting layer. Both ends of the slit are in one the area of the passivation layer having the second thickness.

Display device, method of manufacturing the same, and method of repairing the same

A thin film transistor including a first polycrystalline semiconductor layer disposed on a substrate, a second polycrystalline semiconductor layer disposed on the first polycrystalline semiconductor layer, and metal catalysts configured to adjoin the first polycrystalline semiconductor layer and spaced apart from one another at specific intervals.

Thin film transistor, method of manufacturing active layers of the thin film transistor, and display device

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Yongin, South Korea

Jong-Ryuk Park