Samsung Electronics Co., Ltd.

Jong Ryeol Yoo

Yong Hee Park

Kyung Yub Jeon

Soo Yeon Jeong

Tae Yong Kwon

Oh Seong Kwon

Su Jin Jung

Young Dae Cho

Jeong Ho Yoo

A vertical tunnel field effect transistor (VTFET) including a fin structure protruding from a substrate including a source/drain region, an epitaxially-grown source/drain structure on the fin structure, a cap including pillar portions, the pillar portions covering side surfaces of the epitaxially-grown source/drain structure and partially covering side surfaces of a top portion of the fin structure, a gate insulator covering remaining portions of the side surfaces of the fin structure under the pillar portions of the cap, a work function metal gate on the gate insulator, and a separation pattern surrounding a bottom portion of a fin structure such that the work function metal gate is vertically between the cap and the separation pattern, the separation pattern electrically isolating the work function metal gate from the source/drain region, and a method of manufacturing the same may be provided.

Vertical tunneling field effect transistor and method for manufacturing the same

A semiconductor device and a method of manufacturing a semiconductor device, the device including an active pattern protruding from a substrate; a plurality of gate structures each including a gate electrode and crossing the active pattern; and a source/drain region between the plurality of gate structures, wherein the source/drain region includes a high concentration doped layer in contact with a bottom surface of a recessed region in the active pattern, a first epitaxial layer in contact with an upper surface of the high concentration doped layer and a sidewall of the recessed region, and a second epitaxial layer on the first epitaxial layer, and the high concentration doped layer has a first area in contact with the bottom surface of the recessed region and a second area in contact with the sidewall of the recessed region, the first area being wider than the second area.

Semiconductor device including fin field effect transistor and method of manufacturing the same

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Osan-si, South Korea

Jong Ryeol Yoo