Samsung Electronics Co., Ltd.

Jong-Ryeol Kim

Young-Min Lee

In Soo Kim

Seung-Won Lee

Dong-Hoon Jang

Shi-Yun Cho

June-Hyeon Ahn

Do-Young Rhee

Tae-Il Kim

Byung-Kwon Kang

Duk-Ho Jeon

A semiconductor monolithic integrated optical transmitter including a plurality of active layers formed on a semiconductor substrate is disclosed, which comprises: a distributed feedback laser diode including a grating for reflecting light with a predetermined wavelength and a first active layer for oscillating received light from the grating; an electro-absorption modulator including a second active layer for receiving light from the first active layer, wherein the received light intensity is modulated through a change of absorbency in accordance with an applied voltage; an optical amplifier including a third active layer for amplifying received light from the second active layer; a first optical attenuator between the first active layer and the second active layer; and a second optical attenuator between the second active layer and the third active layer.

Semiconductor monolithic integrated optical transmitter

Disclosed is a distributed Bragg reflector laser, which includes: an active layer; a first guide layer provided with a plurality of first gratings on an upper surface thereof and formed on one side of the active layer; and, a second guide layer provided with a plurality of second gratings on an upper surface thereof, wherein the second guide layer is formed on the other side of the active layer opposite to the first guide layer.

Distributed bragg reflector laser and a method of making same

The present invention provides a wavelength-tunable laser apparatus which is capable of obtaining a high output while suppressing the generation of spontaneous emission, as well as having a broad wavelength-tunable range. In particular, the apparatus includes a distributed reflector section which comprises a first active layer for oscillating light, a first grating for filtering the light generated in the first active layer, and upper and lower clad layers between which the first active layer and the first grating are interposed; a gain section which is formed adjoining to a side of the distributed reflector section and comprises a second active layer disposed between the upper and lower clad layers for adjusting the gain of the light; and a gain-clamped semiconductor optical amplifier section formed adjoining to a side of the gain section, wherein the gain-clamped semiconductor optical amplifier section comprises a third active layer disposed between the upper and lower clad layers for amplifying the light to have a clamped gain and a second grating for filtering the light passing through the third active layer.

Wavelength-tunable laser apparatus

A wavelength converter is provided. The wavelength converter includes a substrate; first and second semiconductor optical amplifiers (SOAs) provided in parallel on the substrate, each of the SOAs including a first portion which passes light at one end, and a second portion which passes light at the opposite end; a first waveguide connected to the second portions of the first and second SOAs; a second waveguide connected to the first portion of the first SOA; and a third waveguide connected to the first portions of the first and second SOAs. The first through third waveguides are arranged on one side of the substrate in the vicinity of the first portions of the first and second SOAs. The first waveguide is connected to the second portions of the first and second SOAs through a unit for changing an optical progressing path.

Wavelength converter

Growing community of inventors

Suwon-shi, South Korea

Jong-Ryeol Kim