Samsung Display Co., Ltd.

Jong Oh Seo

Byung Soo So

Dong-min Lee

Jae Woo Jeong

Dong-Sung Lee

Jang Hyun Kim

Hiroshi Okumura

Jong Hoon Choi

Sang Ho Jeon

Jong Jun Baek

A display device includes a substrate including an opening, a buffer layer disposed on the substrate, a semiconductor disposed on the buffer layer, a gate electrode overlapping at least a portion of the semiconductor in a plan view, a source electrode and a drain electrode electrically connected to the semiconductor, and a light-emitting device electrically connected to the drain electrode. The opening of the substrate overlaps another portion of the semiconductor in a plan view.

Display device and method for manufacturing the same

A transistor substrate includes a substrate, a semiconductor layer overlapping the substrate, and a gate electrode overlapping the semiconductor layer. The semiconductor layer includes a channel unit, a conductive unit directly connected to an end of the channel unit, and an edge unit positioned at an edge of the conductive unit. A carbon concentration of the edge unit is higher than each of a carbon concentration of the channel unit and a carbon concentration of the conductive unit.

Thin film transistor array substrate including edge region capping conductive region

A display device includes: a substrate; a semiconductor layer on the substrate, and including a channel of at least one transistor; a first insulating layer on the semiconductor layer; and a gate electrode on the first insulating layer. The semiconductor layer includes polycrystalline silicon, and the channel includes: a first region containing a first impurity; and a second region containing a second impurity different from the first impurity.

Display device and method of fabricating the same

A display device includes a substrate, a semiconductor layer, an insulating layer, and a conductive layer. The semiconductor layer is disposed on the substrate, includes a channel of a first transistor, and includes a channel of a second transistor. The insulating layer is disposed on the semiconductor layer. The conductive layer is disposed on the insulating layer, includes a gate electrode of the first transistor, and includes a gate electrode of the second transistor. The channel of the first transistor includes a first first-element impurity ion and a second-element impurity ion different from the first first-element impurity ion. The channel of the second transistor includes a second first-element impurity ion identical to the first first-element impurity ion.

Display device and method of manufacturing the same

An embodiment provides a manufacturing method of a polycrystalline silicon layer, including: forming a first amorphous silicon layer on a substrate; doping an N-type impurity into the first amorphous silicon layer; forming a second amorphous silicon layer on the n-doped first amorphous silicon layer; doping a P-type impurity into the second amorphous silicon layer; and crystalizing the n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer by irradiating a laser beam onto n-doped first amorphous silicon layer and the p-doped second amorphous silicon layer to form a polycrystalline silicon layer.

Display device and manufacturing method thereof

A display device and a method of manufacturing a display device are provided. A display device includes a lower conductive pattern disposed on a substrate, a lower insulating layer disposed on the lower conductive pattern, the lower insulating layer including a first lower insulating pattern including an overlapping region overlapping the lower conductive pattern, and a protruding region. The display device includes a semiconductor pattern disposed on the first lower insulating pattern and having a side surface, the side surface being aligned with a side surface of the first lower insulating pattern or disposed inward from the side surface of the first lower insulating pattern, a gate insulating layer disposed on the semiconductor pattern, a gate electrode disposed on the gate insulating layer, and an empty space disposed between the substrate and the protruding region of the first lower insulating pattern.

An optical system for a laser apparatus includes: a long-short axis reversing module that includes a splitter, a first mirror, and a second mirror positioned in a propagation path of an incident laser beam, where the first mirror includes a first submirror and a second submirror connected to each other at a predetermined angle therebetween. The optical system converts an incident laser beam having an asymmetric energy distribution into an emitted laser beam with a symmetric energy distribution.

Optical system for laser apparatus

An organic light emitting diode display includes a substrate, a scan line on the substrate to transfer a scan signal, a data line on the substrate to transfer a data signal, a switching transistor connected with the scan line and the data line, a driving transistor connected with the switching transistor, and an organic light emitting diode electrically connected to the driving transistor. The driving transistor may include a first semiconductor layer, the switching transistor may include a second semiconductor layer, and the first semiconductor layer may have a surface roughness that is greater than that of the second semiconductor layer.

Organic light emitting diode display and method for manufacturing the same

A manufacturing method of a polysilicon layer of a thin film transistor of a display device, includes: irradiating a first excimer laser beam having a first energy density to an amorphous silicon layer including an oxidation layer thereon, to form a first polysilicon layer including thereon portions of the oxidation layer at grain boundaries of the first polysilicon layer; removing the portions of the oxidation layer at the grain boundaries of the first polysilicon layer; and irradiating a second excimer laser beam having a second energy density of 80% to 100% of the first energy density to the first polysilicon layer from which the portions of the oxidation layer at the grain boundaries thereof are removed, to form a second polysilicon layer as the polysilicon layer of the thin film transistor.

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Seoul, South Korea

Jong Oh Seo