Ulsan National Institute of Science and Technology

Duk San Neolux Co., Ltd.

Jong Nam Park

Yo Han Suh

Tae Yun Kim

Do Eon Kim

Yun Hee Park

Kang Yong Kim

Yong Hoon Choi

A technology disclosed in the present disclosure provides a Group III-V-based quantum dot including a seed which includes a Group III element, a Group V element, and an active metal having various oxidation numbers and in which a molar ratio of the Group III element and the active metal is 1:3 to 1:30, and a method of manufacturing the same.

III-V-based quantum dot and method of manufacturing same

The present invention provides a quantum dot of which a surface is passivated with a short chain ligand, and a method of passivating a surface of the quantum dot using a ligand exchange reaction.

Surface-passivated quantum dots and method for passivating surface of quantum dots

There are provided a quantum dot light emitting diode based on a quantum dot of which a surface is passivated with a short chain ligand, and a method of manufacturing the same.

Quantum-dot light-emitting diode and method for producing quantum-dot light-emitting diode

Growing community of inventors

Ulsan, South Korea

Jong Nam Park