Samsung Electronics Co., Ltd.

Jong Myon Kim

Soojung Ryu

Dong-hoon Yoo

Jeongwook Kim

Kyoung June Min

Hee Seok Kim

Suk Jin Kim

Dong Kwan Suh

Jun Jin Kong

Hong-Seok Kim

Jeong Wook Kim

Yeon Gon Cho

A cache memory system using temporal locality information and a data storage method are provided. The cache memory system including: a main cache which stores data accessed by a central processing unit; an extended cache which stores the data if the data is evicted from the main cache; and a separation cache which stores the data of the extended cache when the data of the extended cache is evicted from the extended cache and temporal locality information corresponding to the data of the extended cache satisfies a predetermined condition.

Cache memory system using temporal locality information and a data storage method

A format conversion apparatus which converts image data of a band interleave format into image data of a band separate format is provided. The apparatus includes a memory which stores image data of a band interleave format; and a converting module which reads the memory by increasing a read address of the memory for each stride, and converts the image data of the band interleave format into image data of a band separate format.

Format conversion apparatus from band interleave format to band separate format

A method and system for an early Z test in a tile-based three-dimensional rendering is provided. In the method and system for an early Z test, a portion which is not displayed to a user is removed prior to performing a rasterization process, and thereby performing the 3D rendering efficiently. The method includes segmenting a scene into tiles for performing a rendering with respect to a triangle; selecting a first tile of the tiles, which has a tile Z value less than a minimum Z value of the triangle; and performing the rendering with respect to the triangle in remaining tiles excluding the selected first tile of the tiles.

Method and system for early Z test in title-based three-dimensional rendering

A memory access method includes: obtaining a, b, and c from a program code for accessing a memory with a triple loop in a program, a being a number of values which an inner-most loop variable of the triple loop may have, b being a number of values which a middle loop variable of the triple loop may have, and c being a number of values which an outer-most loop variable of the triple loop may have; obtaining a starting address of the memory accessed by the triple loop; and obtaining an a&#xd7;b&#xd7;c number of addresses of the memory accessed by the triple loop using the starting address and a function.

Memory access method using three dimensional address mapping

Growing community of inventors

Yongin-si, South Korea

Jong Myon Kim