Samsung Electronics Co., Ltd.

Jong Myeong Kim

Ho Kyun An

Sa Hwan Hong

Han Mei Choi

Kong Soo Lee

Myeong Jin Bang

A method for manufacturing a semiconductor device is provided. The method for manufacturing a semiconductor device comprises providing a first substrate including a buffer layer and a base substrate, forming a stacked mold structure including a plurality of unit laminates on the buffer layer, each of the unit laminates including a first sacrificial layer, a first silicon layer, a second sacrificial layer, and a second silicon layer sequentially stacked in a vertical direction and replacing the stacked mold structure with a stacked memory structure through a replacement process, wherein the stacked memory structure includes a metal pattern which replaces the first sacrificial layer and the second sacrificial layer, and an insulating pattern which replaces the second silicon layer, the buffer layer includes silicon-germanium, and a germanium concentration of the buffer layer varies depending on the germanium concentration of the first sacrificial layer and the germanium concentration of the second sacrificial layer.

Growing community of inventors

Uiwang-si, South Korea

Jong Myeong Kim