Samsung Electro-mechanics Co., Ltd.

Jong Myeong Kim

Yoo Sam Na

Yoo Hwan Kim

Hyun Hwan Yoo

Hyun Jin Yoo

Dae Seok Jang

Ju Young Park

Dae Hyun Jang

Nack Gyun Seong

An amplifying circuit is provided. The amplifying circuit includes a bias circuit receiving an operating voltage from a power supply circuit and generating a first bias voltage, a resistance circuit connected between the bias circuit and a gate node and transferring the first bias voltage to the gate node, a start-up circuit generating a high-level start-up voltage and supplying the start-up voltage to the gate node before the operating voltage is supplied, based on a control signal, and an amplifier started-up by receiving the start-up voltage and then receiving the operating voltage and the first bias voltage to amplify a high frequency signal input through the gate node.

Amplifying circuit and amplifying device with start-up function

A radio-frequency switching circuit includes a first switching circuit connected between a common capacitor connected to an antenna port and a first capacitor connected to a first port, and performing a switching operation with a first gate voltage transmitted through a first gate terminal, a voltage generation circuit supplying a drain-source voltage to a common node disposed at a first end of the first switching circuit, and a voltage detection circuit receiving a node voltage from the common node, comparing the node voltage with a reference voltage, and generating a detection voltage including damage information regarding the common capacitor or the first capacitor.

Radio-frequency switching circuit with damage detection of DC blocking capacitor

A complementary metal oxide semiconductor (CMOS) device includes a high-resistivity substrate; a first CMOS structure disposed in a first region of the high-resistivity substrate; and a second CMOS structure of a same semiconductor type as the first CMOS structure and disposed in a second region of the high-resistivity substrate spaced apart from the first region. The high-resistivity substrate is disposed between the first CMOS structure and the second CMOS structure to separate the first CMOS structure from the second CMOS structure.

Layout structure of CMOS transistor with improved insertion loss

An amplification device having a cascode structure includes an amplification circuit including a first transistor and a second transistor, cascode-connected to each other and receiving an operating voltage to amplify an input signal; a first bias circuit generating a first bias voltage and supplying the first bias voltage to the first transistor; and a second bias circuit generating a second bias voltage based on a control voltage and the operating voltage and supplying the second bias voltage to the second transistor.

Amplification device of cascode structure

A bias circuit includes a bias current circuit varying a resistance value according to a mode voltage determined according to a magnitude of an input radio frequency signal, and generating a bias current that is controlled according to the variation of the resistance value; a bias voltage circuit generating a bias voltage that is adjusted according to a change in a power source voltage and supplying the bias voltage to an amplifying circuit; and a bias transfer circuit supplying the bias current to a base node of the amplifying circuit and blocking an input of the radio frequency signal from the base node.

Bias circuit and amplifier

A voltage dropping apparatus may include: a voltage dropping unit receiving an input voltage, outputting the input voltage in a first mode, and dropping a level of the input voltage in a second mode; a voltage output unit connected to the voltage dropping unit, receiving and outputting the input voltage in the first mode, and receiving and outputting the dropped voltage in the second mode; and a control unit receiving a mode signal and controlling a mode change of the voltage dropping unit and the voltage output unit based on a value of the mode signal.

Voltage dropping apparatus, voltage switching apparatus, and internal voltage supply apparatus using the same

A radio frequency switch circuit, according to examples, includes a switching circuit controlled to be in a turned on or turned off state on the basis of a gate signal to thereby allow a radio frequency signal to pass or be blocked; a voltage dividing circuit connected to terminals of the switching circuit that the radio frequency signal passes through and outputting intermediate voltage between the terminals by a voltage dividing node; and an impedance circuit connected between the voltage dividing node and a body terminal of the switching circuit.

Radio frequency switch circuit

A radio frequency switch may include a common port transmitting and receiving a radio frequency signal, a first switching unit including a plurality of first switch elements connected in series and opening or closing a signal transfer path between a first port inputting and outputting the radio frequency signal and the common port, and a second switching unit having a plurality of second switch elements connected in series and opening or closing a signal transfer path between a second port inputting and outputting the radio frequency signal and the common port. The second switching unit further includes a first filter circuit unit connected to a control terminal of at least one second switch element among the plurality of second switch elements to remove at least one preset frequency band signal.

Radio frequency switch including filter circuit

A radio frequency switch circuit may include a first switch circuit unit connected between a signal port and an antenna port, a second switch circuit unit connected between the signal port and a ground, and a third switch circuit unit connected between the antenna port and the ground. An operation reference voltage of the third switch circuit unit is lower than an operation reference voltage of the first switch circuit unit.

Radio frequency switch circuit and control method thereof

A radio frequency switch circuit may include: a first switch circuit unit connected between a first signal port for transmitting and receiving a signal and a common connection node and operated by a first gate signal; a second switch circuit unit connected between a second signal port for transmitting and receiving a signal and the common connection node and operated by a second gate signal; a first shunt circuit unit including first and second shunt units connected to each other in series between a first connection node connected to the first signal port and a ground, the first shunt unit being operated by the first gate signal and the second shunt unit being operated by the second gate signal; and a second shunt circuit unit connected between a second connection node connected to the second signal port and the ground and operated by the first gate signal.

A low-drop-output type voltage regulator may include an error amplifier providing a gate signal depending on a voltage difference between a reference voltage and a feedback voltage, a semiconductor switch adjusting a current between an input terminal receiving a battery voltage and a ground, in response to the gate signal, a feedback circuit dividing and detecting a detection voltage in a detection node between the semiconductor switch and the ground and providing the feedback voltage, a voltage sensor sensing the battery voltage, and a feedback voltage controller adjusting a level of the feedback voltage depending on the sensed battery voltage.

Low-drop-output type voltage regulator and RF switching control device having the same

A radio frequency (RF) switching circuit may include: a first switching circuit unit connected between a first signal port for signal transmission and reception and a common connection node connected to an antenna port and operated according to a first gate signal; a second switching circuit unit connected between a second signal port for signal transmission and reception and the common connection node and operated according to a second gate signal; a negative voltage generating unit generating a negative voltage using a voltage of an RF signal from the common connection node; and a gate signal generating unit generating the first and second gate signals using the negative voltage from the negative voltage generating unit and an operating voltage.

Radio frequency switching circuit and electronic device

A radio frequency switching circuit may include a first switching circuit unit including first to n(n is a natural number greater than at least 2) transistors Mto Mn connected in series between a first signal port for transmission and reception of signals and a common connection node connected to an antenna port and operated according to a first gate signal; a second switching circuit unit connected in series between the common connection node and a second signal port for transmission and reception of signals and operated according to a second gate signal; and a first impedance adjuster forming an alternating current (AC) ground path between a ground and a gate of the first transistor of the first switching circuit unit when the first switching circuit unit is in an off-state.

Radio frequency switching circuit with advanced isolation characteristics

A RF switch may include: a common port coupled to an antenna to transmit and receive first and second high frequency signals; a transmitting switching unit coupled between a transmitting port transferring the first high frequency signal and the common port and including a plurality of switching devices coupled to each other in series; and a receiving switching unit coupled between a receiving port transferring the second high frequency signal and the common port and including a first switching unit including a first switching device. The first switching unit may further include a second switching device having a first terminal coupled to a first terminal of the first switching device and a second terminal coupled to a control terminal of the first switching device.

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Suwon-si, South Korea

Jong Myeong Kim