Electronics and Telecommunications Research Institute

Jong-Moon Park

Jin Ho Lee

Yil Suk Yang

Sang Gi Kim

Jongdae Kim

Seong Wook Yoo

Jin-Gun Koo

Kyoung Il Na

Chi Hoon Jun

Sang Choon Ko

Kwang-Seong Choi

Jong Tae Moon

Dong Yun Jung

Hyun-cheol Bae

Kee-Soo Nam

Hyun-Gyu Jang

Yeong-Cheol Hyeon

Provided is a high voltage bridge rectifier. The high voltage bridge rectifier includes a supporter, a substrate on the supporter, a plurality of equivalent diode circuits mounted on the substrate, interconnection lines, and terminals. The substrate may include an insulation layer, element pads disposed on a center of the insulation layer, and terminal pads disposed on an edge of the insulation layer to surround the element pads.

High voltage bridge rectifier

Provided are a semiconductor device and a method of fabricating the same. The method includes: forming a trench in a semiconductor substrate of a first conductive type; forming a trench dopant containing layer including a dopant of a second conductive type on a sidewall and a bottom surface of the trench; forming a doping region by diffusing the dopant in the trench dopant containing layer into the semiconductor substrate; and removing the trench dopant containing layer.

Semiconductor device and method of fabricating the same

Disclosed is a silicon interposer that can reduce the entire area of a semiconductor package and increase the degree of integration by forming inductors at a lower part in addition to an upper part of a silicon substrate. The silicon interposer includes a silicon substrate, an upper inductor layer formed at the upper part of the silicon substrate and a lower inductor layer formed at the lower part of the silicon substrate.

Silicon interposer including backside inductor

In a method, a film for a gate electrode, exposed through the sidewall of a trench, is thermally treated to grow a thermal oxide film which is, then, removed at the lateral side of the gate electrode, to spatially separate the gate electrode from the gate insulating film in space. This method precisely controls the thermal oxide film formed at the lateral side of the gate electrode, so that the distance between the gate electrode and the electron emission cathode can be accurately adjusted. The electron emission cathodes are homogeneous in shape. Also, the reliability of the display can be improved since a silicide metal is formed on the electron emission cathodes.

Method for manufacturing field emission display device

Growing community of inventors

Daejeon, South Korea

Jong-Moon Park