Lg Innotek Co., Ltd.

Skhynix Inc.

Korea Institute of Science and Technology

Sk Telecom Company, Ltd.

Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Hynix Semiconductor Inc.

Silicon Works Co., Ltd.

Paris Croissant Co., Ltd.

Electronics and Telecommunications Research Institute

Hanmi Pharm. Co., Ltd.

Sogang University Research Foundation

Other

Mando Corporation

The Asan Foundation

Jong Min Lee

Sang Heon Lee

Yong Sang Cho

Young Ho Kim

Sang Hoon Lee

Jae Hyun Kim

Seung-Jong Kim

Man Hue Choi

Kyung Min Kim

Jeen Park

Sung Jin Park

Hyun Jin Kim

Jae Won Chang

Chang Hwan Kim

Hyun Jeong Lee

Tae Hyeon Kim

Se Hyun Kim

Jun Ho Choi

Young Suk Kim

Kyong Min Kim

Jung Ho Kim

Tae Jin Park

Hyuk Joo Kim

Se Chang Kwon

Sung Youb Jung

Jae Ho Kim

Dong Hee Lee

Soo Young Oh

Kyung Chul Woo

Dae Jin Kim

Sung Min Bae

Junho Choi

Seok Hoon Kim

Hyungmin Kim

Soon Ik Jeon

Eun Jung Kim

Young Kee Shin

Woo Young Kim

Jong-Soo Lee

Jin Bum Kim

Myong Hun Im

Dong Chan Suh

Kwang Jun Cho

Chan Lim

Dong Suk Shin

Chang Gyeom Kim

Ji Hwan Jeon

Jang Yeol Kim

Moon Hee Hong

Myoung Lae Roh

Kyung Jun Lee

Young Jae Shim

Young Suk Son

Jong Bae Shin

Boone Won

Yong Goo Kim

Jin Woo Lee

Won Ji Lee

Yoha Hwang

Myoung Gu Lee

Sang Gon Kim

Sook Hyun Kim

Seok Hyun Kim

Nak Hyun Kim

Hyeon Ju An

Eui Jin Kim

Joong Seob Yang

Se Woon Lee

Taek Ki Lee

Dong Sik Park

Chan Bae Kim

Chan Yul Jung

Sung Kyu Min

Sang Yeop Lee

Hyo Seok Lee

Jeung Ook Park

Han Sang Song

Moo Ho Lee

Sang Hun An

Jong Hyun Kang

Ji Young Song

Sang Yun Kim

Hyung Eui Lee

Chang Oh Kim

Jung Kuk Kim

Junhyuk Choi

Sang Bae Lee

Jeong Soon Kwak

Jong Moo Choi

Jeong Ho Yoo

Sam Hyuk Noh

Ji-Hye Yang

Jong Min Oh

Chai O Chung

Jong Hyok Oh

Sue Kyung Oh

Seung Jong Kim

Kyung Jun Song

Ju Gun Park

A thermoelectric device according to one embodiment of the present invention includes a substrate, a first insulating layer disposed on the substrate, a second insulating layer disposed on the first insulating layer and having an area smaller than an area of the first insulating layer, a plurality of first electrodes disposed on the second insulating layer, a plurality of semiconductor structures disposed on the plurality of first electrodes, and a plurality of second electrodes disposed on the plurality of semiconductor structures, wherein the second insulating layer includes an overlapping region in which the plurality of first electrodes, the plurality of second electrodes, and the plurality of semiconductor structures overlap vertically and a protruding pattern protruding from the overlapping region toward a first outer side the substrate.

Thermoelectric device

The present disclosure provides a semiconductor memory device with improved element performance and reliability. The semiconductor memory device includes a substrate, a gate electrode extending in a first direction in the substrate, a plurality of buried contacts on the substrate, and a fence in a trench between adjacent ones of the buried contacts. The fence is on the gate electrode. The fence includes a spacer film on side walls of the trench and extending in a second direction intersecting the first direction, and a filling film in the trench and on the spacer film. An upper surface of the spacer film is lower than an upper surface of the filling film with respect to the substrate.

Semiconductor memory device with buried contacts and a fence

A thermoelectric element according to an embodiment of the present invention comprises: a first substrate; an insulation layer disposed on the first substrate; a first electrode disposed on the insulation layer; a bonding layer disposed on the first electrode; a semiconductor structure disposed on the bonding layer; a second electrode disposed on the semiconductor structure; and a second substrate disposed on the second electrode, wherein the upper surface of the insulation layer includes a first concave surface vertically overlapping the first electrode, the bonding layer includes a first area vertically overlapping the first concave surface and the semiconductor structure and a second area which vertically overlaps the first concave surface and does not vertically overlap the semiconductor structure, and a void density of the first area is smaller than that of the second area.

Thermoelectric element

A thermoelectric device according to an embodiment of the present invention comprises: a first substrate; an insulating layer disposed on the first substrate; a first electrode unit disposed on the insulating layer; a first terminal electrode and a second terminal electrode disposed on the insulating layer and protruding from the first electrode unit toward the first outer side of the first substrate; a semiconductor structure disposed on the first electrode unit; a second electrode unit disposed on the semiconductor structure; and a second substrate unit disposed on the second electrode unit. The second substrate unit comprises a plurality of second substrates disposed away from one another. The first electrode unit comprises: a plurality of electrode groups respectively overlapping the plurality of second substrates vertically; and a first connection electrode connecting two different electrode groups among the plurality of electrode groups. The long side of the first connection electrode is longer than the long side of the first electrode included in the plurality of electrode groups. At least a part of the first connection electrode does not overlap the plurality of second substrates vertically.

A thermoelectric element according to an embodiment of the present invention comprises: a first metal substrate; a first resin layer disposed on the first metal substrate and in direct contact with the first metal substrate; a plurality of first electrodes disposed on the first resin layer; a plurality of thermoelectric legs disposed on the plurality of first electrodes; a plurality of second electrodes disposed on the plurality of thermoelectric legs; a second resin layer disposed on the plurality of second electrodes; and a second metal substrate disposed on the second resin layer, wherein the first resin layer comprises a polymeric resin and an inorganic filler and at least a part of side surfaces of the plurality of first electrodes are embedded in the first resin layer.

A power generation apparatus according to an embodiment of the present invention comprises: a cooling unit, a thermoelectric module comprising a thermoelectric element disposed on one surface of the cooling unit, and a heat sink disposed on the thermoelectric element; a guide plate disposed opposite the thermoelectric module; and a branch unit disposed on another surface perpendicular to the one surface of the cooling unit. The heat sink includes multiple heat dissipation fins which are spaced apart from each other. The ratio of the shortest horizontal distance between the heat sink and the guide plate to the shortest horizontal distance between the branch unit and the guide plate is 0.0625 to 0.25.

Power generation apparatus

A thermoelectric element according to one embodiment of the present disclosure includes a first metal substrate including a first through-hole formed therein, a first insulating layer disposed on the first metal substrate and including a second through-hole formed at a position corresponding to the first through-hole, a first electrode part disposed on the first insulating layer and including a plurality of first electrodes, a semiconductor structure disposed on the first electrode part, a second electrode part disposed on the semiconductor structure and including a plurality of second electrodes, a second insulating layer disposed on the second electrode part, and a second metal substrate disposed on the second insulating layer, wherein the first metal substrate includes a first outer periphery, a second outer periphery, a third outer periphery, and a fourth outer periphery which define a shape of the first metal substrate, the first outer periphery and the fourth outer periphery are opposite to each other, the second outer periphery and the third outer periphery are opposite to each other between the first outer periphery and the fourth outer periphery, the first electrode part includes a first region vertically overlapping the plurality of second electrodes, at least one of the plurality of first electrodes includes an extension portion extending toward the first outer periphery from the first region, the first through-hole is formed in an inside of the first region, and a shortest distance between the second outer periphery and a first electrode, which is closest to the second through-hole among the plurality of first electrodes, is within ±10% of a shortest distance between the second outer periphery and the extension portion.

The present disclosure provides a semiconductor memory device with improved element performance and reliability. The semiconductor memory device comprises a substrate, a gate electrode extending in a first direction in the substrate, a plurality of buried contacts on the substrate, and a fence in a trench between adjacent ones of the buried contacts. The fence is on the gate electrode. The fence includes a spacer film on side walls of the trench and extending in a second direction intersecting the first direction, and a filling film in the trench and on the spacer film. An upper surface of the spacer film is lower than an upper surface of the filling film with respect to the substrate.

Disclosed is an embodiment is a thermoelectric module comprising: a first thermally conductive plate; a thermoelectric element arranged on the first thermally conductive plate; a second thermally conductive plate arranged on the thermoelectric element; and a cover frame, which is arranged on the first thermally conductive plate, and has an accommodation space such that the thermoelectric element is accommodated in the accommodation space, wherein the thermoelectric element includes: a first substrate; a plurality of thermoelectric legs arranged on the first substrate; a second substrate arranged on the plurality of thermoelectric legs; and electrodes comprising a plurality of first electrodes arranged between the first substrate and the plurality of thermoelectric legs; and a plurality of second electrodes arranged between the second substrate and the plurality of thermoelectric legs, and the cover frame includes: an outer frame arranged to be spaced from the thermoelectric element on the first thermally conductive plate; and an upper frame extending toward the second thermally conductive plate so as to be inclined from the upper end of the outer frame toward the downward direction thereof.

Thermoelectric module

A memory system includes a nonvolatile memory device and a controller configured to control the nonvolatile memory device. The nonvolatile memory device includes a first data storage region in which a memory cell stores one-bit data in a first mode and a second data storage region in which a memory cell stores two-bit or more data in a second mode. The controller controls the nonvolatile memory device to perform a read operation on the first data storage region and the second data storage region in the second mode. The controller decodes first data read from the first data storage region, and decodes second data read from the second data storage region. The controller controls the nonvolatile memory device to perform the read operation on the first data storage region in the second mode.

Controller, memory system, and operating methods thereof

A thermoelectric element according to an embodiment of the present invention comprises: a first metallic substrate; a first resin layer which is disposed on the first metallic substrate and comes in direct contact with the first metallic substrate; a plurality of first electrodes disposed on the first resin layer; a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs disposed on the plurality of first electrodes; a plurality of second electrodes disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs; a second resin layer disposed on the plurality of second electrodes; and a second metallic substrate disposed on the second resin layer, wherein a surface of the first metallic substrate that faces the first resin layer comprises a first region and a second region disposed inside the first region, wherein a surface roughness of the second region is greater than a surface roughness of the first region, wherein the first resin layer is disposed on the second region.

Thermoelectric element and manufacturing method thereof

Provided are a protein conjugate in which a physiologically active polypeptide is linked to a biocompatible material via a non-peptidyl polymer-coupled fatty acid derivative compound serving as a linker, exhibiting an increased duration of physiological activity compared to natural forms and a preparation method therefor. Since an increase in serum half-life of the physiologically active polypeptide of the protein conjugate, in which the biocompatible material, the non-peptidyl polymer-coupled fatty acid derivative compound, and the physiologically active polypeptide are linked, is proved, the protein conjugate may be widely used in the field of protein drugs.

Protein complex comprising non-peptidyl polymer-coupled fatty acid derivative compound as linker and preparation method therefor

The present invention relates to a novel glucagon derivative peptide, and a composition for preventing or treating hypoglycemia containing the novel glucagon derivative peptide as an active ingredient. The glucagon derivative according to the present invention has improved physical properties due to the change in isoelectric point (pI) while being capable of maintaining an activity on glucagon receptors, and thus can improve patient compliance when used as a hypoglycemic agent, and is also suitable for administration in combination with other anti-obesity agents. Accordingly, the glucagon derivative according to the present invention can be effectively used for the prevention and treatment of hypoglycemia and obesity.

Glucagon derivatives with improved stability

A data storage device includes a nonvolatile memory apparatus suitable for accessing a target region corresponding to an access command, and a processor suitable for calculating a first hash value corresponding to the target region based on a first hash function, and updating an access count that is indexed by the first hash value.

Data storage device and operating method thereof

Growing community of inventors

Seoul, South Korea

Jong Min Lee