Samsung Electronics Co., Ltd.

Jong-Min Baek

Byung-Hee Kim

Sang-Hoon Ahn

Nae-in Lee

Woo-Kyung You

Gil-heyun Choi

Hee-Sook Park

Seong-hwee Cheong

Jin-Nam Kim

Kyu-Hee Han

Eun-Ji Jung

Rak-Hwan Kim

Jae-Hwa Park

Jong-Jin Lee

Byung-Hak Lee

Tae-Ho Cha

Ho-Yun Jeon

Sang-Shin Jang

Woo-Jin Lee

Kil-soo Choi

Thomas Oszinda

Hoon-Seok Seo

Viet Ha Nguyen

Sang-Ho Rha

Kee-Young Jun

Tae-Jin Yim

Tae-ho Cha

Ki-chul Kim

Young-il Kim

In-Sun Park

Jong-myeong Lee

Jong-Won Hong

Jang-Hee Lee

Young-hyun Kim

Moo-sung Kim

Bong-Kil Jung

Deok-Young Jung

Sang-Don Nam

Byung Hee Kim

Hyeok-Sang Oh

Kyoung-Hee Kim

Se-hyun Kim

Young-Hyun Kim

Jeon-Il Lee

Vietha Nguyen

Su-Kyoung Kim

Yong-Sung Cho

Hei-seung Kim

Kwan-sik Yang

Sung-Jin Kang

Kyung-Min Chung

Young-ju Park

Eui-Bok Lee

Jung-rae Kim

Jung-soo Yoon

Seung-You Baek

Jae-soon Lee

Jae-young You

Jae-hwa Park

Kil-Soo Choi

Jae-Young You

Kwan-Sik Yang

A semiconductor device and a method of manufacturing a semiconductor device, the semiconductor device including a substrate; a first insulating interlayer on the substrate; a first wiring in the first insulating interlayer on the substrate; an insulation pattern on a portion of the first insulating interlayer adjacent to the first wiring, the insulation pattern having a vertical sidewall and including a low dielectric material; an etch stop structure on the first wiring and the insulation pattern; a second insulating interlayer on the etch stop structure; and a via extending through the second insulating interlayer and the etch stop structure to contact an upper surface of the first wiring.

Semiconductor devices and methods of manufacturing the same

Provided herein is a method of forming micropatterns, including: forming an etching target film on a substrate; forming a photosensitivity assisting layer on the etching target film, the photosensitivity assisting layer being terminated with a hydrophilic group; forming an adhesive layer on the photosensitivity assisting layer, the adhesive layer forming a covalent bond with the hydrophilic group; forming a hydrophobic photoresist film on the adhesive layer; and patterning the photoresist film.

Methods of forming micropatterns and substrate processing apparatus

In some example embodiments, a program pulse is applied to a resistive memory cell and a plurality of post pulses are applied to the resistive memory cell at a time point after a relaxation time from a time point when application of the program pulse is finished, the plurality of post pulses having voltage levels that increase sequentially. Programming speed and/or performance of the resistive memory device may be enhanced by accelerating resistance drift of the resistive memory cell using the plurality of post pulses having the voltage levels that increase sequentially.

Resistive memory device and programming method of the same

A semiconductor device includes a first insulating interlayer on a first region of a substrate and a second insulating interlayer on a second region of the substrate, a plurality of first wiring structures on the first insulating interlayer, the first wiring structures being spaced apart from each other, a plurality of second wiring structures filling a plurality of trenches on the second insulating interlayer, respectively, an insulation capping structure selectively on a surface of the first insulating interlayer between the first wiring structures and on a sidewall and an upper surface of each of the first wiring structures, the insulation capping structure including an insulating material, a third insulating interlayer on the first and second wiring structures, and an air gap among the first wiring structures under the third insulating interlayer.

Methods of manufacturing semiconductor devices

An image display apparatus and a method of displaying an image are provided. The image display apparatus includes: a display; a graphics processing unit (GPU); and a processor configured to: determine a copy region of a planar-format image based on information regarding a current viewpoint, control the GPU to generate a sphere-format image by mapping an image corresponding to the copy region to a sphere and to generate an output image by rendering the sphere-format image, and control the display to display the output image.

Image display apparatus and method of displaying image

Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.

Semiconductor devices

A method of forming a semiconductor device can include forming an insulation layer using a material having a composition selected to provide resistance to subsequent etching process. The composition of the material can be changed to reduce the resistance of the material to the subsequent etching process at a predetermined level in the insulation layer. The subsequent etching process can be performed on the insulation layer to remove an upper portion of the insulation layer above the predetermined level and leave a lower portion of the insulation layer below the predetermined level between adjacent conductive patterns extending through the lower portion of the insulation layer. A low-k dielectric material can be formed on the lower portion of the insulation layer between the adjacent conductive patterns to replace the upper portion of the insulation layer above the predetermined level.

Methods of manufacturing semiconductor devices including conductive structures

A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating film, a first trench having a first width, and a second trench having a second width, the second trench including an upper portion and a lower portion, the second width being greater than the first width, a first wire substantially filling the first trench and including a first metal, and a second wire substantially filling the second trench and including a lower wire and an upper wire, the lower wire substantially filling a lower portion of the second trench and including the first metal, and the upper wire substantially filling an upper portion of the second trench and including a second metal different from the first metal.

Semiconductor device and method of fabricating the same

A display device for displaying an application in an execution area according to a user input is disclosed. The display device includes a user interface configured to receive a user input corresponding to a shape, a display, and a controller configured to determine an application corresponding to the shape and determine an execution area for the application on a screen of the display in response to the user interface receiving the user input, and control the display of the application in the execution area.

Display device, calibration device and control method thereof

A semiconductor device includes an insulating interlayer on a first region of a substrate. The insulating interlayer has a recess therein and includes a low-k material having porosity. A damage curing layer is formed on an inner surface of the recess. A barrier pattern is formed on the damage curing layer. A copper structure fills the recess and is disposed on the barrier pattern. The copper structure includes a copper pattern and a copper-manganese capping pattern covering a surface of the copper pattern. A diffusion of metal in a wiring structure of the semiconductor device may be prevented, and thus a resistance of the wiring structure may decrease.

Copper via with barrier layer and cap layer

A semiconductor device includes a plurality of wiring structures spaced apart from each other, and an insulating interlayer structure. Each of the wiring structures includes a metal pattern and a barrier pattern covering a sidewall, a bottom surface, and an edge portion of a top surface of the metal pattern and not covering a central portion of the top surface of the metal pattern. The insulating interlayer structure contains the wiring structures therein, and has an air gap between the wiring structures.

A semiconductor device is provided. The semiconductor device includes a first porous interlayer insulating film having a low dielectric constant and including a first region and a second region, a second interlayer insulating film formed on the first interlayer insulating film in the first region, a plurality of first conductive patterns formed in the second interlayer insulating film such that the plurality of first conductive patterns are spaced apart from each other, at least one second conductive pattern formed in the first interlayer insulating film in the second region and air gaps disposed at lateral sides of the plurality of first conductive patterns.

Semiconductor device and method of manufacturing the same

Growing community of inventors

Seoul, South Korea

Jong-Min Baek