Skhynix Inc.

Samsung Electronics Co., Ltd.

Jong Kyung Park

Ji Hyun Seo

Hye Eun Heo

Eun Joo Jang

Shin Ae Jun

Sung Ho Lee

Seong Jae Choi

Dong Hun Kwak

Tae Kyung Ahn

Jae Yeop Jung

In Seob Noh

A memory device includes memory cells connected to a selected word line; a peripheral circuit configured to perform a first program operation of programming a threshold voltage of each of memory cells to a pre-threshold voltage less than a target threshold voltage, and perform a second program operation of programming the threshold voltage of each of the memory cells to the target threshold voltage after the first program operation is performed; and control logic configured to control the peripheral circuit so that a first pass voltage and a second pass voltage are sequentially applied to adjacent word lines, when a program voltage is applied to the selected word line, in the first program operation and the second program operation. A magnitude of the second pass voltage in the first program operation may be greater than a magnitude of the second pass voltage in the second program operation.

Electronic device and method of operating the same

Provided herein may be a memory device and a method of operating the same. The memory device may include a plurality of memory cell strings, a peripheral circuit configured to, using a plurality of read voltages, perform a read operation that reads data that is stored in a selected memory cell that is included in a selected memory cell string, and an operation controller configured to control the peripheral circuit to perform the read operation by using a first read voltage, a first potential adjustment operation, and the read operation by using a second read voltage that is lower than the first read voltage, wherein the first potential adjustment operation is an operation that applies a first turn-on voltage to unselected source select lines that are coupled to unselected memory cell strings for a first period and thereafter applies a ground voltage to the unselected source select lines.

Memory device and method of operating the same

A semiconductor device includes a memory string coupled between a source line and a bit line and including a plurality of memory cells, a plurality of word lines, a peripheral circuit configured to apply a program voltage to a word line, apply a first pass voltage to a word line coupled to a first memory cell adjacent to the selected memory cell, and apply a second pass voltage to a second memory cell adjacent to the selected memory cell, and control logic configured to control the peripheral circuit so that the first pass voltage has a higher voltage level than the second pass voltage when a program target level of the selected memory cell is lower than a first threshold value, and the first pass voltage has a lower voltage level than the second pass voltage when the program target level is higher than a second threshold value.

Semiconductor device and operating method of a semiconductor device

A semiconductor memory apparatus includes a memory cell array, a peripheral circuit, and control logic. The memory cell array may include a plurality of memory cells. The peripheral circuit performs a program operation on selected memory cells among the plurality of memory cells. The control logic controls an operation of the peripheral circuit. The control logic controls the peripheral circuit to perform a pre-program operation on first memory cells to be programmed to an upper programmed state among the selected memory cells and perform a normal program operation on the selected memory cells after the pre-program operation.

Semiconductor memory device and method of operating the same

A memory device according to an embodiment includes a memory cell block including a plurality of pages with each page corresponding to a word line of a plurality of word lines, a peripheral circuit configured to perform a program operation on the plurality of pages, and control logic configured to control the peripheral circuit to perform the program operation. The control logic changes and sets a bit line voltage applied to bit lines of the memory cell block during a program verify operation of the program operation according to a program order of each of the plurality of pages.

Memory device capable of improving a threshold voltage distribution of memory cells and method of operating the memory device

There is provided a semiconductor memory device and an operating method thereof. A semiconductor memory device includes a memory cell array including a plurality of pages; a peripheral circuit suitable for performing a program operation by applying a program voltage, a pass voltage, and a pipe transistor operation voltage, to the memory cell array; and a control logic suitable for controlling the peripheral circuit to perform the program operation, wherein the control logic adjusts a potential level of the pipe transistor operation voltage according to an address of a selected page among the plurality of pages.

Semiconductor memory device and operating method thereof with a connection control transistor operation voltage adjusted

A method for preparing a multilayer of nanocrystals. The method includes the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals. Further, an organic-inorganic hybrid electroluminescence device using a multilayer of nanocrystals prepared by the method as a luminescent layer. The luminescent efficiency and luminescence intensity of the electroluminescence device can be enhanced, and the electrical properties of the electroluminescence device can be controlled by the use of the multilayer of nanocrystals as a luminescent layer.

Method for preparing multilayer of nanocrystals, and organic-inorganic hybrid electroluminescence device comprising multilayer of nanocrystals prepared by the method

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Guri-si, South Korea

Jong Kyung Park