Samsung Electronics Co., Ltd.

S-printing Solution Co., Ltd.

Hp Printing Korea Co., Ltd.

Won-ii Communics Co., Ltd.

Jong-Kyu Kim

Seung-wook Jeong

Jongchul Park

Naoto Fukasawa

Yil-hyung Lee

Sang-Kuk Kim

Seungwook Jeong

Hakyung Kim

Min-chul Kim

Jongsoon Park

Ji-Sang Park

Kyong-Hwan Kim

Hoon-Tae Kim

Norio Okada

Minchul Kim

Kwang-hyuck So

Jung-Ik Oh

Gwang-Hyun Baek

Woohyun Lee

Chang-Hwan Hwang

Yoon-Young Cho

Inho Kim

Sung-Gil Choi

Hyeji Yoon

Hyun-Sook Kim

Sang-sup Jeong

Yong-Joon Choi

Sang-In Lee

Yoo-Chul Kong

Soung-Kwan Kim

Sangsup Jeong

Kuk-Han Yoon

Heung-Ki Lee

Soung-Kwan Kimn

Hye-Ji Yoon

Hyun-woo Yang

Gil-Yoon Kim

Jong-Soon Park

Jong-Kyu Lim

Jaehun Seo

Jong-Seong Lee

Dae-seok Byeon

Yun-Gi Hong

Kyeong-Koo Chi

Tae-hyung Kim

Bum-Soo Kim

Sung-Il Cho

Kyoung-Sub Shin

Jong-Chul Park

Seok-Woo Nam

Byeong-Yun Nam

Hyuk Kim

Cheol-Kyu Lee

Young-sun Min

Yoshitaka Isogai

Kukhan Yoon

Heung-sik Park

Han-Na Cho

Hyun-chul Yoon

Ha-Kyung Kim

Su-Hyun Kim

Joon-Seok Kang

Woo-Hyun Lee

Kyungrae Byun

Ho-il Lee

Ki-jin Park

Dae-Sik Hwang

Seung-Ryong Kook

Taekung Park

Sang-Dong Kwon

Ho-Kil Lee

Junsoo Lee

Jang-Bin Yim

Cheon Seong Lee

Dong-Hyun Jo

You-Kyung Cho

Jung-Wook Chai

SungII Cho

A high voltage switch circuit includes a first transistor, a first depletion mode transistor, a level shifter, a control signal generator, a second transistor and a second depletion mode transistor. The first transistor transmits the second driving voltage to an output terminal in response to a first gate signal. The first depletion mode transistor transmits the second driving voltage to the first transistor in response to feedback from the output terminal. The control signal generator generates first and second control signals in response to a level-shifted enable signal. The second transistor has a gate electrode connected to the first voltage and is turned on and off in response to the second control signal at a first end of the second transistor. The second depletion mode transistor is connected between a second end of the second transistor and the output terminal, and has a gate electrode receiving the first control signal.

High voltage switch circuit, nonvolatile memory device including the same and memory system including the same

An ion beam apparatus may include a chamber assembly configured to hold a material and direct an ion beam on the material, a detector configured to detect a signal generated from the material based on the ion beam being directed on the material, and a controller configured to control at least one parameter associated with the chamber assembly based on the signal, such that at least one of an ion energy associated with the ion beam, an ion current associated with the ion beam, and an incident angle of the ion beam with respect to a top surface of the material is changed continuously with time.

Ion beam apparatus with continuously changing parameter control

An etching target layer is formed on a substrate. An upper mask layer is formed on the etching target layer. A plurality of preliminary mask patterns is formed on the upper mask layer. The plurality of preliminary mask patterns is arranged at a first pitch. Two neighboring preliminary mask patterns of the plurality of preliminary mask patterns define a preliminary opening. An ion beam etching process is performed on the upper mask layer using the plurality of preliminary mask patterns as an etch mask to form a first preliminary-interim-mask pattern and a pair of second preliminary-interim-mask patterns. The first preliminary-interim-mask pattern is formed between one of the pair of second preliminary-interim-mask patterns and the other of the pair of second preliminary-interim-mask patterns.

Methods of fabricating semiconductor device

In an example embodiment a method of processing a substrate includes forming a plasma in a plasma chamber and using charged grids to form an ion beam and to thereby accelerate ions from the plasma chamber to a processing chamber. An auxiliary heater, which may be a radiant heater, may be used to pre-heat a grid to a saturation state to accelerate heating and concomitant distortion of the grid. A process recipe may pre-compensate for distortion of the grid.

Method of processing a substrate using an ion beam and apparatus for performing the same

An ion beam etching device comprises: an ion source configured to generate ions; a grid on a side of the ion source, the grid configured to accelerate the generated ions to generate an ion beam; a process chamber configured to have an etching process using the ion beam performed therein; and a variable magnetic field application part adjacent to the process chamber, the variable magnetic field application part configured to apply a variable magnetic field.

Ion beam etching devices

A method of forming fine patterns includes forming an upper mask layer on a substrate, forming preliminary mask patterns on the upper mask layer, and forming upper mask patterns by etching the upper mask layer using the preliminary mask patterns as etch masks. Forming the upper mask patterns includes etching the upper mask layer by performing an etching process using an ion beam. The upper mask patterns include a first upper mask pattern formed under each of the preliminary mask patterns, and a second upper mask pattern formed between the preliminary mask patterns in a plan view and spaced apart from the first upper mask pattern.

Method of forming fine patterns of a semiconductor device

Ion beam apparatuses and methods for forming patterns using the same, and methods for manufacturing magnetic memory devices using the same

Provided herein are methods of fabricating a magnetic memory device including forming magnetic tunnel junction patterns on a substrate, forming an interlayered insulating layer on the substrate to cover the magnetic tunnel junction patterns, forming a conductive layer on the interlayered insulating layer, patterning the conductive layer to form interconnection patterns electrically connected to the magnetic tunnel junction patterns, and performing a cleaning process on the interconnection patterns. The cleaning process is performed using a gas mixture of a first gas and a second gas. The first gas contains a hydrogen element (H), and the second gas contains a source gas different from that of the first gas.

Methods of forming an interconnection line and methods of fabricating a magnetic memory device using the same

A semiconductor memory device that includes at least a lower contact plug on a semiconductor substrate, a magnetic tunnel junction of the lower contact plug, and a barrier pattern on a sidewall of the lower contact plug may further include an insulation pattern on the sidewall of the lower contact plug. The insulation pattern may be between the barrier pattern and the magnetic tunnel junction pattern. The insulation pattern may include an upper portion and a lower portion whose width is greater than a width of the upper portion.

Semiconductor memory device

A semiconductor device includes a magnetic tunnel junction structure on a lower electrode, an intermediate electrode on the magnetic tunnel junction structure, and an upper electrode on the intermediate electrode, wherein the intermediate electrode includes a lower portion and an upper portion having a side surface profile different from that of the lower portion.

Semiconductor device having magnetic tunnel junction structure and method of forming the same

Printer

An electronic device is provided comprising a processor configured to: identify one or more sink devices; for each sink device, generate a respective display data structure; for each sink device, generate a respective data stream, the respective data stream being generated by encoding content produced by one or more applications based on the respective display data structure of the sink device; and transmit, to each of the sink devices, that sink device's respective encoded data stream.

Method and apparatus for screen sharing

Multi-function printer

Laser printer

Growing community of inventors

Seoul, South Korea

Jong-Kyu Kim