Hynix Semiconductor Inc.

Lg-ericsson Co., Ltd.

Jong Kuk Kim

Seung Bum Kim

Cheol Hwan Park

Ho Jin Cho

Kyoung Bong You

Jae Wook Seo

Hyoung Chang Kang

A semiconductor device that prevents the leaning of storage node when forming a capacitor having high capacitance includes a plurality of cylinder-shaped storage nodes formed over a semiconductor substrate; and support patterns formed to fix the storage nodes in the form of an 'L' or a '+' when viewed from the top. This semiconductor device having support patterns in the form of an &#x2018;L&#x2019; or a &#x2018;+&#x2019; reduces stress on the storage nodes when subsequently forming a dielectric layer and plate nodes that prevents the capacitors from leaking.

Semiconductor device and method for manufacturing the same,which prevents leaning of a storage node when forming a capacitor having a plurality of storage nodes of 'L' or '+' shape support patterns

Embodiments of the present invention may provide an apparatus and a method for transmitting an orthogonal frequency division multiplexing access (OFDMA) symbol in an OFDMA system. A bandwidth limit parameter for generating an OFDMA symbol may be adaptively determined based on the received signal quality of a receiver. An OFDMA symbol may be generated based on the bandwidth limit parameter and transmitted to the receiver. According to embodiments, when the received signal quality of the receiver is bad, the bandwidth limit parameter may be first adjusted before the modulation scheme is changed to have a lower data rate. In such a case, the downlink date rate may be maintained with enhancing the received signal quality of the receiver.

Apparatus and method for transmitting OFDMA symbols

A method for manufacturing a semiconductor device includes forming an oxide film uniformly in a trench in the device isolation by, for example, a radical oxidation process. The method also includes increasing the thickness of the oxide film positioned at recess sidewalls by forming a gate oxide film. Manufacturing the device according to this method will prevent junction leakage and maintain a gate oxidation intensity characteristic that will improve the refresh characteristic of the device.

Method for manufacturing semiconductor device

A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes cylinder type bottom electrodes connected to a contact plug formed over a semiconductor substrate, and a supporting pattern formed between the cylinder type bottom electrodes, wherein a portion of sidewalls of the bottom electrodes is higher than the supporting pattern and the other portion of the sidewalls of the bottom electrode is lower than the supporting pattern.

Method for manufacturing semiconductor device having a capacitor

A method for forming a shallow trench isolation (STI) of a semiconductor device comprises forming a nitride film pattern over a semiconductor substrate having a defined lower structure, etching a predetermined thickness of the semiconductor substrate using the nitride film pattern as a mask to form a trench having a vertical sidewall in a portion of the substrate predetermined to be a device isolation region, performing a plasma treatment process on the sidewall of the trench to form a plasma oxide film, forming an oxide film over the resulting structure to fill the trench, and performing a planarization process over the resulting structure.

Method for forming shallow trench isolation of semiconductor device

A method for manufacturing a semiconductor device comprises: forming an interlayer insulating film including a storage node contact plug over a semiconductor substrate; forming an etching barrier film, a sacrificial insulating film, and a hard mask film over the storage node contact plug and the interlayer insulating film; forming a first storage node region by removing a portion of the sacrificial insulating film and the hard mask film by an etching process such that a polymer film is formed at a sidewall of the hard mask film and the sacrificial insulating film; and forming a second storage node region by removing the remaining portions of the sacrificial insulating film and the etching barrier film, thereby exposing the storage node contact plug. The method prevents a bowing phenomenon in the etching process for forming a storage node region and thus allows storage nodes having substantially vertical profiles to be formed.

Growing community of inventors

Gyeonggi-do, South Korea

Jong Kuk Kim