Samsung Electronics Co., Ltd.

Ls Industrial Systems Co., Ltd.

Jong Kug Seon

Hyeon Jin Shin

Hyun Jun Jeong

Kwang Hee Lee

Jae Jun Lee

Sang Kyun Lee

Jin Heong Yim

Sang Kook Mah

Ki Yong Song

Yi Yeol Lyu

Jung Yoon Kim

Joon Sung Ryu

Disclosed herein is an abnormal current detection circuit for circuit breaker, comprising a full-wave amplifier, a positive wave-period comparator for comparing a positive wave-period amplification voltage signal with a positive wave-period reference voltage signal to output a pulse signal, a negative wave-period comparator for comparing a negative wave-period amplification voltage signal with a negative wave-period reference voltage signal to output a pulse signal, a combining circuit for combining pulse signals outputted from the positive wave-period comparator and the negative wave-period comparator to output a full-wave combining signal, a reference voltage generator for generating a reference voltage signal, and a comparative driving circuit section for comparing the combining signal with the reference voltage signal to output a signal for controlling a circuit breaker to be driven to a circuit breaking position when the combining signal is greater or equal to the reference voltage signal.

Abnormal current detecting circuit for circuit breaker

A multi-functional cyclic siloxane compound (A), a siloxane-based (co)polymer prepared from the compound (A), or compound (A) and at least one of a Si monomer having organic bridges (B), an acyclic alkoxy silane monomer (C), and a linear siloxane monomer (D); and a process for preparing a dielectric film using the polymer. The siloxane compound of the present invention is highly reactive, so the polymer prepared from the compound is excellent in mechanical properties, thermal stability and crack resistance, and has a low dielectric constant resulting from compatibility with conventional pore-generating materials. Furthermore, a low content of carbon and high content of SiOenhance its applicability to the process of producing a semiconductor, wherein it finds great use as a dielectric film.

Multi-functional cyclic siloxane compound and process for preparing dielectric film by using siloxane-based polymer prepared from the compound

A novel multi-functional linear siloxane compound, a siloxane polymer prepared from the siloxane compound, and a process for forming a dielectric film by using the siloxane polymer. The linear siloxane polymer has enhanced mechanical properties (e.g., modulus), superior thermal stability, a low carbon content and a low hygroscopicity and is prepared by the homopolymerization of the linear siloxane compound or the copolymerization of the linear siloxane compound with another monomer. A dielectric film can be produced by heat-curing a coating solution containing the siloxane polymer which is highly reactive. The siloxane polymer prepared from the siloxane compound not only has satisfactory mechanical properties, thermal stability and crack resistance, but also exhibits a low hygroscopicity and excellent compatibility with pore-forming materials, which leads to a low dielectric constant. Furthermore, the siloxane polymer retains a relatively low carbon content but a high SiOcontent, resulting in its improved applicability to semiconductor devices. Therefore, the siloxane polymer is advantageously used as a material for dielectric films of semiconductor devices.

Multi-functional linear siloxane compound, a siloxane polymer prepared from the compound, and a process for forming a dielectric film by using the polymer

Multi-functional cyclic siloxane compound, a siloxane-based polymer prepared from the compound and a process for preparing a dielectric film by using the polymer

A multi-functional cyclic silicate compound, a siloxane-based polymer prepared from the silicate compound and a process of producing an insulating film using the siloxane-based polymer. The silicate compound of the present invention is highly compatible with conventional pore-generating substances and hardly hygroscopic, so it is useful for the preparation of a siloxane-based polymer suitable to a SOG process. Furthermore, a film produced by the use of such siloxane-based polymer is excellent in mechanical properties, thermal stability and crack resistance and enhanced in insulating properties by virtue of its low hygroscopicity. Therefore, in the field of semiconductor production, this film is of great use as an insulating film.

Multi-functional cyclic silicate compound, siloxane-based polymer prepared from the compound and process of producing insulating film using the polymer

A siloxane-based resin having germanium and an interlayer insulating film for a semiconductor device formed using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties so that they are useful materials for an insulating film between interconnecting layers of a semiconductor device.

Siloxane-based resin containing germanium and an interlayer insulating film for a semiconductor device using the same

A siloxane-based resin having a novel structure and a semiconductor interlayer insulating film using the same. The siloxane-based resins have a low dielectric constant in addition to excellent mechanical properties and are useful materials in an insulating film between interconnect layers of a semiconductor device.

Growing community of inventors

Gyeonggi-do, South Korea

Jong Kug Seon