Korea Institute of Science and Technology

Jong Ku Park

So Hye Cho

Seung Yong Lee

Hyung Ho Park

Kwang Yong Eun

Ju Choi

Kyung Tae Hong

Myoung Ki Yoo

Seung Woo Lee

Jae Kyung Lee

Joon Soo Han

Bok Ryul Yoo

Ho Seong Jang

Bong Geun Song

Sun Jin Kim

Young Whan Cho

Jae Hyeok Shim

Young Do Kim

Jung Mann Doh

Seung Ick Lee

Bong Gun Song

Kyunghoon Kim

Mi Jin Kim

Seung T Park

Khan Sovann

Sung Tae Park

Bo In Park

Dong Eui Jung

The present invention relates to a novel method for preparing a water-insoluble metal hydroxide, and a use thereof. The water-insoluble metal hydroxide of the present invention is conveniently and efficiently prepared s through the high-temperature heat treatment step two times and the washing step, and thus contains a small amount of an alkali metal and has a high crystallinity and a phase purity. The water-insoluble metal hydroxide of the present invention or metal oxide therefrom exhibits an absorption wavelength at a low wavelength range (for example, 490 nm or less) and a light emitting wavelength at a high wavelength range (for example, from 500 nm or more to less than 1,100 nm). Accordingly, the water-insoluble metal hydroxide of the present invention may be efficiently used in various applications such as a fire retardant, an antacid, an adsorbent and so forth, and may also be doped with another metal ion to be utilized as a raw material for fabricating a catalyst, a fluorescent material, an electrode material, a secondary battery material and the like.

Water-insoluble metal hydrate containing an alkali metal and preparation methods thereof

Provided is a copper indium gallium selenium (CIGS)- or copper zinc tin sulfur (CZTS)-based solar cell including a back electrode layer and a light-absorbing layer, wherein the light-absorbing layer has a composition of CuInGa(SSe)(wherein 0.85&#x2266;x&#x3c;1, 0&#x3c;y&#x3c;1, 0&#x3c;z&#x3c;1, and each of x, y and z represents a real number) or CuZnSn(SSe)(wherein 1.4&#x2266;p&#x3c;2, 0&#x3c;q&#x3c;2, 0&#x3c;r&#x3c;2, and each of p, q and r represents a real number). The CIGS- or CZTS-based thin-film solar cell causes no interlayer delamination and has improved durability and photoelectric conversion efficiency. Also provided is a method for fabricating a CIGS- or CZTS-based thin-film solar cell by which conversion of molybdenum back electrode layer to molybdenum diselenide is controlled.

CIGS- or CZTS-based film solar cells and method for preparing the same

Disclosed is a method for producing a copper indium selenium (CIS) or copper indium gallium selenium (CIGS) thin-film light-absorbing layer. The method includes forming a coating layer of CIGS slurry, removing a solvent, a dispersant and a binder from the coating layer to form a powder coat layer, pressing the powder coat layer to improve its particle packing density, and heating the powder layer to form a dense thin film. The method uses a powder process as a non-vacuum process to produce a CIS or CIGS thin film in high yield at low cost. Further disclosed is a method for manufacturing a thin-film solar cell including the production method.

Method for producing thin-film light-absorbing layer and method for manufacturing thin-film solar cell including the same

The present invention relates to a method of fabricating ultra-fine grain cermet alloys with a homogenous solid solution grain structure. More particularly, the invention relates to a method of fabricating an ultra-fine TiC-base cermet alloy with a homogenous solid solution structure which does not comprise a core-rim structure in the carbide grain. The object of the present invention is to provide a method of fabricating a TiC-base cermet alloy without the core-rim structure. The above objects of the present invention could be achieved by employing a conventional sintering process (vacuum sintering) of (Ti,TM)C carbide obtained from a mechano-chemical synthesis (high energy ball-milling) from milling the powders of Ti, TM, Ni and Co metals.

Method of fabricating ultra-fine cermet alloys with homogeneous solid grain structure

The present invention relates to a method of controlling the microstructures of Cu&mdash;Cr-based contact materials for vacuum interrupters, in which a heat-resistant element is added to the Cu&mdash;Cr-based contact materials to obtain an excellent current interrupting characteristic and voltage withstanding capability, and contact materials manufactured thereby. The method of controlling the microstructures of Cu&mdash;Cr-based contact materials includes the steps of mixing a copper powder used as a matrix material, a chromium powder improving an electrical characteristic of the contact material and a heat-resistant element powder making the chromium particles in the matrix material fine to thereby obtain mixed powder, and subjecting the mixed powder to one treatment selected from sintering, infiltration and hot pressing to thereby obtain a sintered product.

Method of controlling the microstructures of Cu-Cr-based contact materials for vacuum interrupters and contact materials manufactured by the method

A method for fabricating a hermetically sealed tungsten-copper package container for a microwave device is provided with the steps of forming an injection feedstock by mixing a polymer binder with a tungsten powder having a particle diameter of 2 to 5 .mu.m and a purity 99.9 of weight percent, forming a three-dimensional part by applying a powder injection molding to the feedstock, obtaining a tungsten skeleton structure by eliminating the binder from the injection molded part, and carrying out a copper infiltration to a copper plate placed on the tungsten skeleton structure for two hours under a hydrogen atmosphere at a temperature of 1250.degree. C. The method incorporates an improved heat sink characteristic, a thermal expansion coefficient similar to that of GaAs, and a capability of applying thereto a strip wire connection, without an extra machining process.

Hermetically sealed tungsten-copper composite package container for

A tungsten skeleton structure fabrication method employed in an application of a copper infiltration and tungsten-copper composite fabrication method includes the steps of forming a source powder by coating the tungsten powder surface having a purity of 99.9 weight percent and 2.about.5 .mu.m in size, with nickel by less than 0.06 weight percent (600 ppm), forming an injection molded admixture by admixing a source powder and a polymer binder, carrying out a powder injection molded with regard to the admixture, and obtaining a tungsten skeleton structure by removing the polymer binder from the resultant injection molded body. The method prevents the molded body from being unevenly shrunken during a liquid phase sintering for thereby decreasing its production cost.

Tungsten skeleton structure fabrication method employed in application

The present invention provides a process for preparing titanium nitride sintered masses having no residual pores and consisting of TiN solid solution particles and Ni solid solution matrix, in which a granulated powder of the following composition:

Process for preparing sintered titanium nitride cermets

A invention provides a method for production of diamond particles. The solvent metallic disk of a starting material specimen used in this diamond synthesis is divided into two layers. An intermediate layer is interposed between the two solvent metallic layers, so that the diamond crystals, formed on the two solvent metallic surfaces in contact with graphite disks and influenced by gravity, are not floated on the upper surface of the solvent metallic disk but grown at their positions in the individual solvent metallic layers at which they were nucleated. Hence, the method of this invention results in formation of the same number of diamond products, having the same size and desired good quality, on opposed surfaces or the upper and lower surfaces of the solvent metallic disk. The intermediate layer is a thin disk made of tungsten or molybdenum and having a thickness ranged from 10 .mu.m to 100 .mu.m.

Method for production of diamond particles

A process for preparing large granules of cubic boron nitride from hexagonal boron nitride, which comprises using a binary alloy of Al-Mg as a catalyst under high temperature and pressure wherein binary alloy can be obtained by gas spraying of the alloy melt or grinding the agglomerates and easily treated due to its low activity, whereby the resultant cubic boron nitride crystal has large size without impurities.

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Seoul, South Korea

Jong Ku Park