Skhynix Inc.

Kioxia Corporation

Jong Koo Lim

Guk Cheon Kim

Taiga Isoda

Kazuya Sawada

Tae Young Lee

Tadaaki Oikawa

Soo Gil Kim

Kenichi Yoshino

Young Min Eeh

Ku Youl Jung

Eiji Kitagawa

Sung Woong Chung

Soo Man Seo

Min Seok Moon

According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer; a stoichiometric first layer; a first insulator between the first ferromagnetic layer and the first layer; a second ferromagnetic layer between the first insulator and the first layer; and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.

Magnetoresistive memory device

An electronic device may include a semiconductor memory, and the semiconductor memory may include a multilayer synthetic anti-ferromagnetic (Multi SAF) structure including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer interposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the spacer layer may include n non-magnetic layers and n&#x2212;1 magnetic layers that are disposed such that each of the n non-magnetic layers and each of the n&#x2212;1 magnetic layers are alternately stacked, wherein n indicates an odd number equal to or greater than 3, wherein the n&#x2212;1 magnetic layers and n non-magnetic layers may be configured to effectuate an antiferromagnetic exchange coupling with at least one of the first ferromagnetic layer and the second ferromagnetic layer.

Electronic device

An electronic device may include a semiconductor memory, and the semiconductor memory may include a magnetic tunnel junction (MTJ) structure including a free layer, a pinned layer, and a tunnel barrier layer, the free layer having a variable magnetization direction, the pinned layer having a fixed magnetization direction, the tunnel barrier layer being interposed between the free layer and the pinned layer; and a thermal stability enhanced layer (TSEL) including a homogeneous material having an Fe&#x2014;O bond.

Electronic device including thermal stability enhanced layer including homogeneous material having Fe-O bond

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Icheon-si, South Korea

Jong Koo Lim