Yangtze Memory Technologies Co., Ltd.

Jong Jun Kim

Zhenyu Lu

Simon Shi-Ning Yang

Steve Weiyi Yang

Feng Pan

Lidong Song

Yongna Li

Youn Cheul Kim

Jong Seuk Lee

Embodiments of methods for testing three-dimensional memory devices are disclosed. The method can include: applying an input signal to a first conductive pad of the memory device by a first probe of a probe card; transmitting the input signal through the first conductive pad, a first TAC, a first interconnect structure passing through a bonding interface of the memory device, at least one of a memory array contact and a test circuit to a test structure; receiving an output signal through a second interconnect structure passing through the bonding interface, a second TAC, at least one of the memory array contact and the test circuit from the test structure; measuring the output signal from a second conductive pad of the memory device by a second probe of the probe card; and determining a characteristic of the test structure based on the input signal and the output signal.

Structure and method for testing three-dimensional memory device

Embodiments of structures and methods for testing three-dimensional (3D) memory devices are disclosed. In one example, a 3D memory device includes a memory array structure, a peripheral device structure, and an interconnect layer in contact with a front side of the memory array structure and a front side of the peripheral device structure, and a conductive pad at a back side of the memory array structure and that overlaps the memory array structure. The memory array structure includes a memory array stack, a through array contact (TAC) extending vertically through at least part of the memory array stack, and a memory array contact. The peripheral device structure includes a test circuit. The interconnect layer includes an interconnect structure. The conductive pad, the TAC, the interconnect structure, and at least one of the test circuit and the memory array contact are electrically connected.

Growing community of inventors

Hubei, China

Jong Jun Kim