Samsung Display Co., Ltd.

Jong-Jun Baek

Su-Hyoung Kang

Hyun-Gue Kim

A thin film transistor includes a substrate, a gate electrode disposed on the substrate, an active pattern disposed on the gate electrode, a source electrode electrically coupled to the active pattern and a drain electrode electrically coupled to the active pattern. The active pattern includes a first channel layer overlapping the source electrode and the drain electrode and a second channel layer overlapping the gate electrode. The second channel layer includes a plurality of high electron mobility regions. An electron mobility of each of the high electron mobility regions is greater than an electron mobility of the first channel layer.

Growing community of inventors

Seoul, South Korea

Jong-Jun Baek