Samsung Electronics Co., Ltd.

Jong In Yun

Hansoo Kim

Youngwoo Park

Byoungkeun Son

Jin-Soo Lim

Sung-Hwan Jang

A method of manufacturing a three-dimensional semiconductor memory device comprises forming a thin layer structure by alternately stacking first and second material layers on a substrate, forming a penetration dent penetrating the thin layer structure and exposing a top surface of the substrate recessed by the penetration dent, forming a vertical insulation layer penetrating the thin layer structure to cover an inner wall of the penetration dent, forming a semiconductor pattern penetrating the vertical insulation layer at the penetration dent to be inserted into the substrate, and forming an oxide layer between the thin layer structure and the substrate by oxidizing a sidewall of the penetration dent.

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Seoul, South Korea

Jong In Yun