Electronics and Telecommunications Research Institute

Korea University Industrial Academic Collaboration Foundation

Jong Hyurk Park

Jong Dae Kim

Kang Ho Park

Eun Kyoung Kim

Hong Yeol Lee

Seung Eon Moon

Gyu Tae Kim

Jung Hyun Lee

Seong Jae Lee

Nak Jin Choi

Gyeong Sook Bang

Hyo Young Lee

Jae Woo Lee

Do Young Jang

Hyun Jin Ji

Eung Seook Park

So Jeong Park

Jung Hwan Huh

Hye Yeon Ryu

Provided are an apparatus for collecting environmental data and a method of monitoring an environment in real time. The apparatus for collecting environmental data includes a receiver for receiving an environmental data collection command from outside, a headset controller for interpreting the environmental data collection command received from the receiver, and distinguishing an audio signal received from outside from the environmental data collection command, the environment sensor unit for collecting environmental data according to the environmental data collection command interpreted from the headset controller, and a transmitter for transmitting the environmental data collected by the environment sensor unit.

Apparatus for collecting environmental data and method of monitoring environment in real time

A method of fabricating an electronic device using nanowires, minimizing the number of E-beam processing steps and thus improving a yield, includes the steps of: forming electrodes on a substrate; depositing a plurality of nanowires on the substrate including the electrodes; capturing an image of the substrate including the nanowires and the electrodes; drawing virtual connection lines for connecting the nanowires with the electrodes on the image using an electrode pattern simulated through a computer program, after capturing the image; coating an E-beam photoresist on the substrate; removing the photoresist from regions corresponding to the virtual connection lines and the electrode pattern using E-beam lithography; depositing a metal layer on the substrate after removing the photoresist from the regions of the virtual connection lines; and removing remaining photoresist from the substrate using a lift-off process.

Method of fabricating electronic device using nanowires

Provided is a method of fabricating a nano-wire array, including the steps of: depositing a nano-wire solution, which contains nano-wires, on a substrate; forming a first etch region in a stripe shape on the substrate and then patterning the nano-wires; forming drain and source electrode lines parallel to each other with the patterned nano-wires interposed therebetween; forming a plurality of drain electrodes which have one end connected to the drain electrode line and contact at least one of the nano-wires, and forming a plurality of source electrodes, which have one end connected to the source electrode line and contact the nano-wires that contact the drain electrodes; forming a second etch region between pairs of the drain and source electrodes so as to prevent electrical contacts between the pairs of the drain and source electrodes; forming an insulating layer on the substrate; and forming a gate electrode between the drain and source electrodes contacting the nano-wires on the insulating layer. Accordingly, even in an unparallel structure of nano-wires to electrode lines, a large scale nano-wire array is practicable and applicable to an integrated circuit or display unit with nano-wire alignment difficulty, as well as to device applications using flexible substrates.

Method of fabricating nano-wire array

Provided is an optical microscope system for detecting nanowires to allow for use of an existing optical microscope in fabricating an electronic device having the nanowires and including: a light source for emitting light to provide the light to a nanowire sample; a rotational polarizer provided on a path of the light emitted from the light source for polarizing the light; an optical microscope for detecting a nanowire image using light that is polarized by the rotational polarizer and incident on the nanowire sample; a CCD camera provided in a region of the optical microscope for photographing and storing the nanowire image detected by the optical microscope; and a data processor for performing Fast Fourier Transform (FFT) on the nanowire image stored in the CCD camera. Intensity of reflected light varies, due to optical anisotropy of the nanowires, along a polarizing orientation of light incident on the nanowires.

Optical microscope system for detecting nanowires using polarizer and fast fourier transform

Provided is a data storing and reading apparatus for storing and reading data using a nano device with nano-dots dots regularly arranged, comprising a probe movable by a cantilever so as to be placed onto each nano-dot of the nano device, a bias power supply unit for supplying a storing bias voltage and a reading bias voltage between the probe and the nano device, a light beam generator for generating a light beam to detect a position of the probe, a position detector for detecting the light beam reflected from the probe, an amplifier for amplifying an output signal of the position detector, and a detection circuit for reading data stored in the nano-dot using an output signal of the amplifier.

Data storing and reading apparatus for storing data in a nano-device

Provided is a data storage apparatus using current switching in a metal oxide layer. The data storage apparatus includes a substrate; a lower electrode layer disposed on the substrate; a metal oxide layer disposed on the lower electrode layer; a probe tip disposed on the metal oxide layer opposite the lower electrode layer and for scanning a local region of the metal oxide layer in units of nanometer, wherein the probe tip applies a write voltage to the local region of the metal oxide layer so that the resistance of the local region is sharply changed until a resistive state of the local region is switched from a first state to a second state or measures current flowing through the local region according to the resistive state and reads data stored in the local region; a driver for transferring the position of the probe tip to the local region of the metal oxide layer; and a controller for controlling the probe tip and the driver.

Data storage apparatus using current switching in metal oxide layer

A method for manufacturing a silicon nanodot thin film having uniform doping concentration without damage by placing a substrate on a stage within a chamber. The method further including depositing a matrix thin film based on the silicon by PECVD, while doping a light emitting material such as Erbium on the matrix thin film deposited by sputtering process at the same time. The silicon nanodot film obtained by the present invention has an improved light emitting characteristic in long distance communication frequency range of 1.54 &#x3bc;m as well as visible light range.

Method for manufacturing silicon nanodot film for light emission in nano-size photonic devices

Provided are a compound for a molecular electronic device which includes a terpyridine-ruthenium organic metal compound including a thiol anchoring group of the formula below, a method of synthesizing the compound and a molecular electronic device including a molecular active layer obtained from the compound.  In the formula, Rand Rare each a thioacetyl group or a hydrogen atom, at least one of Rand Ris a thioacetyl group, and m and n are each integers from 0 to 20. The molecular active layer, which is formed by self-assembling the compound on an electrode surface, composes a switching element and a memory element.

Compound for molecular electronic device having thiol anchoring group, method of synthesizing the compound, and molecular electronic device having molecular active layer obtained from the compound

Provided is a method of fabricating a nanoimprint mold which can form sub-100 nm fine pattern structures. The method includes forming patterns on a first substrate using an E-beam lithography (EBL) process, and transferring the patterns formed on the first substrate to a second substrate using a nanoimprint lithography (NIL) process to complete an NIL mold. Accordingly, the method can easily fabricate the nanoimprint mold at low costs on a quartz or glass substrate, which is not suitable for an EBL process to produce sub-100 nm patterns, by utilizing the advantages of the EBL process with a resolution of tens of nanometers.

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Daegu, South Korea

Jong Hyurk Park