Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Jong-Hyun Seo

Mun-Pyo Hong

Nam-Seok Roh

Woo-Jae Lee

Hyung-Il Jeon

Wang-su Hong

Bo-Sung Kim

Tae-Young Choi

Yong-Uk Lee

Joon-Hak Oh

Dae-Ok Kim

A thin film transistor substrate for a liquid crystal display device includes a substrate, a metal layer on the substrate, and an aluminum complex oxide layer on the metal layer. The aluminum complex oxide layer comprises at least one selected from the group consisting of zirconium, tungsten, chromium and molybdenum. A passivation layer is formed on the aluminum complex oxide layer through a dipping process.

Method of manufacturing a liquid crystal display device with aluminum complex oxide layer

Display device having an aluminum complex oxide on metal layer for improving corrosion resistance

Provided is a substrate for a liquid crystal display which is resistant to deformation. The substrate includes a flexible substrate, first and second barrier layers respectively disposed on first and second surfaces of the flexible substrate, and first and second hard coating layers respectively disposed on the first and second barrier layers.

Substrate for liquid crystal display

A method of manufacturing a contact portion is provided, which includes: forming a first signal line on a substrate (), forming a insulating layer () covering the first signal line and having a contact hole () exposing the first signal line; forming a contact layer () on the exposed surface of the first signal through the contact hole; and forming a second signal line () connected to the first signal line via the contact layer. Wherein the first signal line is made of Al or Al alloy, and the second signal line is made of ITO or IZO.

Contact portion and manufacturing method thereof, thin film transistor array panel and manufacturing method thereof

A method of manufacturing a flexible display is provided, which includes forming a gate line including a gate electrode on a substrate, sequentially depositing a gate insulating layer covering the gate line, and a semiconductor layer, firstly etching the semiconductor layer; secondly etching the semiconductor layer, forming a data line including a source electrode, and a drain electrode on the semiconductor layer and the gate insulating layer; and forming a pixel electrode connected to the drain electrode.

Method of manufacturing a flexible thin film transistor array panel including plastic substrate

A electrophoretic display is provided, which includes: a thin film transistor array panel including a plurality of data lines having a plurality of source electrodes and a plurality of drain electrodes, a plurality of organic semiconductor islands at least covering the portion of the source and the drain electrodes and disposed between the source and the drain electrodes, a plurality of gate insulators formed on the organic semiconductor islands, a plurality of gate lines including a plurality of gate electrodes disposed on the gate insulators, and a plurality of pixel electrodes connected to the drain electrodes; a common electrode panel facing the thin film transistor array panel and having a common electrode; and a plurality of micro-capsules containing a plurality of negative and positive pigment particles and interposed between the thin film transistor array panel and the common electrode panel.

Growing community of inventors

Seoul, South Korea

Jong-Hyun Seo