Samsung Electronics Co., Ltd.

Jong Hyun Paek

Seul Ji Song

Woo Jun Jeong

A semiconductor memory device includes a substrate, a first conductive line disposed on the substrate and extending in a first direction, a second conductive line disposed on the first conductive line, and extending in a second direction intersecting the first direction, and a memory cell disposed between the first conductive line and the second conductive line, wherein the memory cell includes, a first electrode connected to the first conductive line, a second electrode connected to the second conductive line, an OTS film disposed between the first electrode and the second electrode, a high-concentration electrode disposed between the second electrode and the OTS film, wherein a concentration of nitrogen contained in the second electrode is lower than a concentration of nitrogen contained in the high-concentration electrode, wherein a logic state of data stored in the OTS film is based on a polarity of a program voltage.

Growing community of inventors

Suwon-si, South Korea

Jong Hyun Paek