Samsung Display Co., Ltd.

Samsung Electronics Co., Ltd.

Jong Hyun Choung

Tae Wook Kang

Hong Sick Park

Sun Young Hong

Bong Kyun Kim

Byeong Jin Lee

Jae Uoon Kim

Joon Yong Park

Ji Sun Lee

Hyun Ah Sung

Byung Uk Kim

Young Rok Kim

Sung Gun Shin

Soon Beom Huh

Se Hwan Jung

Doo Young Jang

Bong Kyu Shin

Won Suk Shin

Jong Hyun Jeong

Seong Bae Kim

Hyun Eok Shin

Shin Il Choi

Sung Chul Kim

Gyung Min Baek

Dong Min Lee

Bong Soo Kim

Seung Bae Kang

Joon Woo Bae

Do Keun Song

Beung Hwa Jeong

Ki Tae Kim

Hee Sung Yang

Kyu Soon Park

Suk Ii Yoon

Suk Il Yoon

A display device includes a first substrate including a display area and a pad area, which is on one side of the display area, a plurality of conductive layers each including a plurality of wires and conductive patterns, which are in the display area and the pad area, on the first substrate, a via layer on the plurality of conductive layers, a first electrode and a second electrode on the via layer, in the display area, to be spaced apart from each other, a first insulating layer on the first electrode and the second electrode, a plurality of light-emitting elements on the first electrode, the second electrode, and on the first insulating layer, and a first connecting electrode on the first electrode and in contact with the plurality of light-emitting elements, and a second connecting electrode on the second electrode and in contact with the plurality of light-emitting elements, wherein at least one of the plurality of conductive layers includes a metal layer, which includes a copper-silver (CuAg) alloy and has a crystal grain size of 140 nm or less.

Wiring substrate and display device including the same

A display device includes conductive layers including wires and conductive patterns in a display area and a pad area, a via layer on the conductive layers, a first electrode and a second electrode on the via layer in the display area and spaced apart from each other, a first insulating layer on the first electrode and the second electrode, light emitting elements on the first electrode and the second electrode spaced apart from each other on the first insulating layer, and a first connection electrode on the first electrode and electrically contacting the light emitting elements, and a second connection electrode on the second electrode and electrically contacting the light emitting elements, each of the conductive layers includes a first metal layer and a second metal layer on the first metal layer, and the second metal layer contains copper and has a grain size of about 155 nm or less.

A method of fabricating a conductive pattern includes forming a conductive metal material layer and a conductive capping material layer on a substrate, forming a photoresist pattern as an etching mask on the conductive capping material layer, forming a first conductive capping pattern by etching the conductive capping material layer with a first etchant, forming a conductive metal layer and a second conductive capping pattern by etching the conductive metal material layer and the first conductive capping pattern with a second etchant, and forming a conductive capping layer by etching the second conductive capping pattern with a third etchant. The second conductive capping pattern includes a first region overlapping the conductive metal layer and a second region not overlapping the conductive metal layer, and the forming of the conductive capping layer includes etching the second region of the second conductive capping pattern to form the conductive capping layer.

Method of fabricating conductive pattern, display device, and method of fabricating display device

A display device includes a data conductive layer disposed on a substrate, a passivation layer disposed on the data conductive layer, a via layer disposed on the passivation layer, and a pixel electrode disposed on the via layer. The data conductive layer includes a data base layer, a data main metal layer disposed on the data base layer, a first data capping layer disposed on the data main metal layer, a second data capping layer disposed on the first data capping layer, and a third data capping layer disposed on the second data capping layer. The passivation layer and the via layer include a pad opening which exposes a portion of the data conductive layer in the pad area. The third data capping layer has a higher etch rate than the first and second data capping layers for a same etchant.

Display device

A transistor array substrate includes a substrate (having a first trench), a gate electrode (in the first trench), an insulating film, a gate line, a data line, a source electrode, and a drain electrode. The insulating film includes second, third, fourth, fifth, and sixth trenches. The gate line is in the second trench and is not parallel to the data line. The data line includes a first section and a second section that are separated by the gate line and respectively in the third and fourth trenches. The source electrode and the drain electrode are respectively in the fifth and sixth trenches. The source electrode is electrically connected to the data line. The gate electrode is electrically connected to the gate line.

Thin film transistor array substrate minimizing unwanted reflection of external light and method of manufacturing the same

There is provided a display device. The display device includes a first substrate, a second substrate that faces the first substrate, and a liquid crystal layer disposed between the first substrate and the second substrate. One of the first substrate and the second substrate includes a base substrate and a light blocking pattern disposed on a surface that faces the other surface of both surfaces of the base substrate, the light blocking pattern exposing a part of the base substrate. The light blocking pattern includes a semi-transmission reflective layer a disposed on the base substrate, a phase matching layer disposed on the semi-transmission reflective layer, and a reflective metal layer disposed on the phase matching layer. The phase matching layer and the reflective metal layer include materials having substantially the same etching rate.

Substrate, display device including the same, and method of manufacturing the display device

A method of forming a thin film pattern includes providing a thin film on a substrate, providing a photoresist on the thin film, forming a first photoresist pattern having a first packing density by exposing and developing the photoresist, etching the thin film by using the first photoresist pattern as a mask, processing the first photoresist pattern to convert the first photoresist pattern into a second photoresist pattern having a second packing density, which is lower than the first packing density, and stripping the second photoresist pattern by spraying steam onto the second photoresist pattern.

Photoresist stripping apparatus, and methods of stripping photoresist and forming thin film pattern using the same

A thin film transistor array substrate includes a first conductive pattern group including a gate line extending along a first direction, data lines extending along a second direction crossing the first direction and spaced apart from each other along the second direction with the gate line there between, and a gate electrode protruding from the gate line, an active pattern disposed on the gate electrode to overlap the gate electrode, a second conductive pattern group including a bridge pattern coupling the data lines, a source electrode extending to an upper portion of the active pattern from the bridge pattern and a drain electrode spaced apart from the source electrode, facing the source electrode and disposed on the active pattern and metal patterns each stacked between the active pattern and the source electrode and between the active pattern and the drain electrode.

Thin film transistor array substrate and manufacturing method of the same

An array substrate for display devices is provided. According to an exemplary embodiment, the array substrate for display device includes: a plurality of gate lines that extend along a first direction; and a data line that is formed by connecting a plurality of first sub-data lines extending along a second direction and a plurality of second sub-data lines extending along a third direction, wherein the gate lines overlap the second sub-data lines with an insulating layer interposed therebetween.

Array substrate for display devices

The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.

Composition for stripping and stripping method

A thin film transistor substrate and a method of manufacturing the thin film transistor substrate comprises forming a gate line and a data line intersecting each other with a gate insulating layer interposed and defining a pixel area on the substrate, a thin film transistor electrically connected to the gate line and the data line, and a stepped-structure occurring pattern overlapping at least one of the gate line and the data line; forming a passivation layer having a stepped-structure portion formed by the stepped-structure occurring pattern on the substrate; forming a photoresist pattern having a second stepped-structure portion corresponding to the stepped-structure portion on the passivation layer; patterning the passivation layer using the photoresist pattern as a mask; forming a transparent conductive layer on the substrate; and removing the photoresist pattern where the transparent conductive layer is covered by a stripper penetrating through the stepped-structure portion of the photoresist pattern and forming a pixel electrode connected to the thin film transistor.

Thin film transistor substrate and method of manufacturing thereof

Growing community of inventors

Suwon-si, South Korea

Jong Hyun Choung