Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Dongwoo Fine-chem Co., Ltd.

Techno Semichem Co., Ltd.

Jong-Hyun Choung

Hong-Sick Park

Bong-Kyun Kim

Sun-Young Hong

Byeong-Jin Lee

Won-Suk Shin

Shi-Yul Kim

In-Bae Kim

Seon-Il Kim

Nam-Seok Suh

Young-Chul Park

Sam-Young Cho

Joo-Ae Youn

Ki-beom Lee

In-Ho Yu

Suck-Jun Lee

Jae-Woo Jeong

Sang-Gab Kim

Wang Woo Lee

Byeong-Beom Kim

Jae-Hyoung Youn

Yang-Ho Bae

Joon-Woo Lee

Sang-Hoon Jang

Young-Jun Jin

Young-Jin Yoon

Chang-Oh Jeong

Yu-Gwang Jeong

Sang-woo Kim

Shin-Il Choi

Sang-tae Kim

Hong Sick Park

Jean-Ho Song

Ji-Young Park

Dong-Ju Yang

Doo-Hee Jung

Hyun-cheol Shin

Won-Guk Seo

Jang-Soo Kim

Ki-Won Kim

Woo-Geun Lee

Sang Gab Kim

Young-Wook Lee

Jong-in Kim

Youngmin Moon

Jong-In Kim

Sung-Ryul Kim

Byung-Uk Kim

Pil-Sang Yun

Hwa-Yeul Oh

Hongsick Park

Young-Joo Choi

Hong-Sik Park

Hyun-Cheol Shin

Ki-Yeup Lee

O-Sung Seo

Je-Hyeong Park

Min-Ki Lim

Suk-Il Yoon

Jong-Hyun Jeong

Soon-Beom Huh

Gyu-po Kim

Young Min Moon

Hong-Long Ning

Won-guk Seo

Gi-Yong Nam

In Seol Kuk

Seung-yeon Han

Tai-Hyung Rhee

Yong-Sung Song

Jeong-Min Park

Seungyong Song

Min-Seok Oh

Sang-Woo Kim

Hong-Kee Chin

Seung-Ha Choi

Yu-Jin Lee

Joo-han Kim

Seung-yong Lee

O Sung Seo

Jean Ho Song

Woo Jin Cho

Hwa Yeul Oh

Yong-Hwan Ryu

Hyun-Kyu Lee

Ji-Hee Son

Wang-Woo Lee

Jae Woo Jeong

Yang Ho Bae

O-Byoung Kwon

Jae Uoon Kim

Dae-woo Lee

Ki Tae Kim

Joo-Ae Yoon

Hyun Duck Cho

Youngchul Park

Seon-II Kim

Giyong Nam

Kyong-Min Kang

Seung-Jae Yang

A deposition apparatus includes a chamber, a deposition source disposed in the chamber, a mask assembly, and a base substrate disposed on the mask assembly. The mask assembly includes a frame including frame openings, a mask disposed on the frame and including deposition holes, and a welding stick disposed on the mask. A welding groove is disposed along an edge of the frame and has a depth in the thickness direction of the frame. The welding stick overlaps the welding groove.

Method for manufacturing mask and deposition apparatus including mask

An input sensor of a display device includes: a sensing electrode on a base insulating layer and overlapping a sensing region; and a signal line electrically connected to the sensing electrode and overlapping the non-sensing region, and including: a first conductive layer on the base insulating layer and having a first reflectance, a first conductivity, and a first thickness; a second conductive layer having a second reflectance lower than the first reflectance, a second conductivity lower than the first conductivity, and a second thickness smaller than the first thickness, wherein the second conductive layer is on and in contact with the first conductive layer; and a third conductive layer between the base insulating layer and the first conductive layer, in contact with each of the base insulating layer and the first conductive layer, wherein the third conductive layer contains a material different from that of the second conductive layer.

Display device having input sensor and fabricating method of the input sensor

A method of manufacturing a display device in a chamber in which a material including yttrium is coated on an inner surface includes: forming a first layer pattern by dry etching on a substrate; depositing a second layer material on the first layer pattern; forming a photoresist pattern on the second layer material; completing a second layer pattern by using the photoresist pattern as an etch mask; and performing an additional acid etching process by using an etching solution including at least one of hydrochloric acid, sulfuric acid, or nitric acid before the forming of the photoresist pattern on the second layer material after the dry etching to form the first layer pattern.

Manufacturing method of display device

A touch screen panel and manufacturing method thereof are disclosed. In one aspect, the touch screen panel includes a substrate having a touch area and a peripheral area that surrounds the touch area and a plurality of first touch electrode patterns that are formed in the touch area, extend in a first direction, and are configured to transmit a first touch signal. The touch panel also includes a plurality of second touch electrode patterns that are formed in the touch area, extend in a second direction crossing the first direction, and are configured to transmit a second touch signal and a plurality of first driving circuit wirings that are formed in the peripheral area and are respectively electrically connected to the first touch electrode patterns. The first driving circuit wirings include a low resistance wiring layer.

Touch screen panel including touch electrode patterns and driving circuit wirings having a low resistance wiring layer and connected thereto and manufacturing method thereof

An etchant composition is provided comprising a persulfate from 0.5 to 20 wt %; a fluoride compound from 0.01 to 2 wt %; an inorganic acid from 1 to 10 wt %; a N (nitrogen atom)-containing heterocyclic compound from 0.5 to 5 wt %; a chloride compound from 0.1 to 5 wt %; a copper salt from 0.05 to 3 wt %; an organic acid or an organic acid salt from 0.1 to 10 wt %; an electron-donating compound from at 0.1 to 5 wt %; and a solvent of the residual amount. Also provided is a method of manufacturing a display device by using the same.

Etchant and method of manufacturing display device by using the same

A thin film transistor array panel includes: a gate line on a substrate and including a gate electrode; a first gate insulating layer on the substrate and the gate line, the first gate insulting layer including a first portion adjacent to the gate line and a second portion overlapping the gate line and having a smaller thickness than that of the first portion; a second gate insulating layer on the first gate insulating layer; a semiconductor layer on the second gate insulating layer; a source electrode and a drain electrode spaced apart from each other on the semiconductor layer; a passivation layer on the second gate insulating layer, the source electrode and the drain electrode; and a pixel electrode on the passivation layer and connected with the drain electrode. The first gate insulating layer and the second gate insulating layer have stress in opposite directions from each other.

Method for manufacturing thin film transistor array panel

A thin film transistor array panel includes a gate line, a gate insulating layer that covers the gate line, a semiconductor layer that is disposed on the gate insulating layer, a data line and drain electrode that are disposed on the semiconductor layer, a passivation layer that covers the data line and drain electrode and has a contact hole that exposes a portion of the drain electrode, and a pixel electrode that is electrically connected to the drain electrode through the contact hole. The data line and drain electrode each have a double layer that includes a lower layer of titanium and an upper layer of copper, and the lower layer is wider than the upper layer, and the lower layer has a region that is exposed. The gate insulating layer may have a step shape.

Thin film transistor substrate and the method thereof

A liquid crystal display includes: a substrate; a gate line and a data line disposed on the substrate; a semiconductor layer disposed on the substrate; first and second field generating electrodes disposed on the substrate; and a first protecting layer formed from the same layer as the first field generating electrode and covering at least a portion of the data line.

Liquid crystal display

A etchant composition that includes, based on a total weight of the etchant composition, about 0.5 wt % to about 20 wt % of a persulfate, about 0.5 wt % to about 0.9 wt % of an ammonium fluoride, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 10.0 wt % of a sulfonic acid, about 5 wt % to about 10 wt % of an organic acid or a salt thereof, and a remainder of water. The etchant composition may be configured to etch a metal layer including copper and titanium, to form a metal wire that may be included in a thin film transistor array panel of a display device.

Etchant composition and method of forming metal wire and thin film transistor array panel using the same

An etchant composition includes about 0.5 weight % to about 20 weight % of persulfate, about 0.01 weight % to about 2 weight % of a fluoride compound, about 1 weight % to about 10 weight % of an inorganic acid, about 0.5 weight % to about 5 weight % of a cyclic amine compound, about 0.1 weight % to about 10.0 weight % of a compound having an amino group and a sulfonic acid, about 0.1 weight % to about 15.0 weight % of an organic acid or a salt thereof, and water to 100 weight % of the etchant composition.

Etchant composition and method of manufacturing metal wiring and thin film transistor substrate using the etchant

An etchant composition including 0.5 wt % to 20 wt % of a persulfate, 0.01 wt % to 1 wt % of a fluorine compound, 1 wt % to 10 wt % of an inorganic acid, 0.01 wt % to 2 wt % of an azole-based compound, 0.1 wt % to 5 wt % of a chlorine compound, 0.05 wt % to 3 wt % of a copper salt, 0.01 wt % to 5 wt % of an antioxidant or a salt thereof, based on a total weight of the etchant composition, and water in an amount sufficient for the total weight of the etchant composition to be equal to 100 wt % is disclosed. The etchant composition is suitable for use in forming a metal wiring by etching a metal layer including copper or in fabricating a thin film transistor substrate for a display apparatus.

Etchant composition and methods of fabricating metal wiring and thin film transistor substrate using the same

An etching composition, a method of forming a metal pattern using the etching composition, and a method of manufacturing a display substrate are disclosed. The etching composition includes about 0.1% by weight to about 25% by weight of ammonium persulfate, about 0.1% by weight to about 25% by weight of an organic acid, about 0.01% by weight to about 5% by weight of a chelating agent, about 0.01% by weight to about 5% by weight of a fluoride compound, about 0.01% by weight to about 5% by weight of a chloride compound, about 0.01% by weight to about 2% by weight of an azole-based compound and a remainder of water. Thus, a copper layer may be stably etched to improve a reliability of manufacturing the metal pattern and the display substrate.

Etching composition, method of forming a metal pattern using the etching composition, and method of manufacturing a display substrate

An etchant includes, based on a total amount of the etchant, from about 0.5 to about 20 wt % of a persulfate, from about 0.01 to about 2 wt % of a fluorine compound, from about 1 to about 10 wt % of an inorganic acid, from about 0.5 to about 5 wt % of an azole compound, from about 0.1 to about 5 wt % of an electron-donating compound, from about 0.1 to about 5 wt % of a chlorine compound, from about 0.05 to about 3 wt % of a copper salt, from about 0.1 to about 10 wt % of an organic acid or an organic acid salt, and a remaining amount of water.

Etchant and method for manufacturing display device using the same

A metal wire etchant including persulfate, a sulfonate, a fluorine compound, an azole-based compound, an organic acid, a nitrate, and a chlorine compound, and a method of making the same.

Metal wire etchant and method of forming metal wire using the same

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Hwaseong-si, South Korea

Jong-Hyun Choung