Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Jong-Hyuk Kang

Yong-Hoon Son

Jong-Wook Lee

Jae-Byung Park

Dong-Hoon Lee

Hyun-Min Cho

Jongwook Lee

Hyun-Deok Im

Jung-Hyun Kwon

Jung Ho Kim

Pil-Kyu Kang

Sung-Ho Lee

Hae-Il Park

Sanghun Jeon

Seungwoo Choi

Yong-Ho Yoo

Tae-Jung Park

Heungkyu Park

Daelok Bae

Hyun-Joo Cha

Hee-Dong Park

Jin Sung Choi

Jung-ho Kim

Nam-Seok Roh

Seul Gee Lee

Jin Hyeock Choi

Sung-Jin Hong

Hak-Sun Kim

Oleg Prudnikov

Yu-Kwan Kim

Don-Chan Cho

Sung-jin Hong

Vladimir Urazaev

Jin-Ha Jeong

Kwang-Keun Lee

Jae-Woong Kang

Sung-Woo Hyun

Baek-Hee Lee

Min-Ki Nam

In a vertical-type memory device and a method of manufacturing the vertical-type memory device, the vertical memory device includes an insulation layer pattern of a linear shape provided on a substrate, pillar-shaped single-crystalline semiconductor patterns provided on both sidewalls of the insulation layer pattern and transistors provided on a sidewall of each of the single-crystalline semiconductor patterns. The transistors are arranged in a vertical direction of the single-crystalline semiconductor pattern, and thus the memory device may be highly integrated.

Vertical-type semiconductor devices and methods of manufacturing the same

A backlight assembly includes a first light source part including a plurality of first light sources configured to generate light having a first color and a plurality of second light sources configured to generate light having a second color different from the first color, and a light guiding plate including a first incident surface and an exiting surface adjacent to the first incident surface. The exiting surface is configured to allow the light to pass therethrough. The exiting surface includes a first peripheral portion configured to absorb the light having the second color and a central portion adjacent to the first peripheral portion and configured to allow the light to pass therethrough. The first and second light sources are alternately located.

Backlight assembly, display apparatus having the same and method of manufacturing the same

An image compensating device includes a transmission ratio calculator configured to output a red transmission ratio of a user's crystalline lens, a green transmission ratio of the crystalline lens, and a blue transmission ratio of the crystalline lens based on the user's age, and a compensator configured to receive red input data, green input data, and blue input data and compensate the red input data, the green input data, and the blue input data based on the red transmission ratio, the green transmission ratio, and the blue transmission ratio.

Image compensating device and display device having the same

A backlight assembly includes a plurality of first light sources configured to emit a first color, and a plurality of second light sources configured to emit a second color different from the first color, where the backlight assembly is divided in a first boundary area, a second boundary area spaced apart from the first boundary area in a first direction, and a middle area between the first boundary area and the second boundary area, and an arrangement direction of first and second light sources of the plurality of first and second light sources in the first and second boundary areas is different from an arrangement direction of first and second light sources of the plurality of first and second light sources in the middle area.

Backlight assembly and display apparatus including the same

A backlight assembly having a light emitting module and a lower receiving container, the light emitting module including a first light source configured to generate a first light and a quantum dot rail configured to generate a second light from the first light the light emitting module is disposed under a display panel to provide the display panel with the second light, and the lower receiving container is configured to receive the light emitting module and the display panel.

Backlight assembly and display apparatus having the same

A semiconductor device includes a plurality of lower electrodes on a substrate, with each of the lower electrodes extending in a height direction from the substrate and including sidewalls, the lower electrodes being spaced apart from each other in a first direction and in a second direction, a plurality of first supporting layer patterns contacting the sidewalls of the lower electrodes, the first supporting layer patterns extending in the first direction between ones of the lower electrodes adjacent in the second direction, a plurality of second supporting layer patterns contacting the sidewalls of the lower electrodes, the second supporting layer pattern extending in the second direction between ones of the lower electrodes adjacent in the first direction, the plurality of second supporting layer patterns being spaced apart from the plurality of first supporting layer patterns in the height direction.

Methods of manufacturing semiconductor devices

A quantum dot light-emitting device and a display apparatus including the same, the device including a light-emitting device that emits a first light; a quantum dot layer facing the light-emitting device, the quantum dot layer including a plurality of quantum dots, absorbing the first light, and emitting a second light and a third light that have different wavelength ranges compared to the first light; and a band pass filter on the quantum dot layer, the band pass filter cutting off a portion of the second light and a portion of the third light.

Quantum dot light-emitting device and display apparatus

A display device includes a display panel having a first transparent subpixel, a second transparent subpixel and a third transparent subpixel. A light source part provides light to the display panel. The light source part including a first light source configured to generate red light, a second light source configured to generate green light and a third light source configured to generate blue light. The third light source includes a blue light emitting diode and a wavelength shift layer. The wavelength of the blue light emitted from the third light source has a first peak within a range of about 445 nm to about 450 nm and a second peak within a range of about 450 nm to about 540 nm.

Liquid crystal display device including light sources emitting different colors

Semiconductor devices and methods of manufacturing the same

In a vertical-type semiconductor device, a method of manufacturing the same and a method of operating the same, the vertical-type semiconductor device includes a single-crystalline semiconductor pattern having a pillar shape provided on a substrate, a gate surrounding sidewalls of the single-crystalline semiconductor pattern and having an upper surface lower than an upper surface of the single-crystalline semiconductor pattern, a mask pattern formed on the upper surface of the gate, the mask pattern having an upper surface coplanar with the upper surface of the single-crystalline semiconductor pattern, a first impurity region in the substrate under the single-crystalline semiconductor pattern, and a second impurity region under the upper surface of the single-crystalline semiconductor pattern. The vertical-type pillar transistor formed in the single-crystalline semiconductor pattern may provide excellent electrical properties. The mask pattern is not provided on the upper surface of the single-crystalline semiconductor pattern in the second impurity region, to thereby reduce failures of processes.

Method of manufacturing a vertical-type semiconductor device and method of operating a vertical-type semiconductor device

A semiconductor device includes a back bias dielectric including a negative fixed charge, a gate electrode overlapping the back bias dielectric, a semiconductor layer disposed between the gate electrode and the back bias dielectric, and a gate dielectric disposed between the semiconductor layer and the gate electrode, wherein the negative fixed charge accumulates holes at a surface of the semiconductor layer facing the back bias dielectric.

Semiconductor devices and methods of forming semiconductor devices

A semiconductor device includes a trench isolation region provided on a substrate and defining first and second active regions separated from each other. A first semiconductor pillar protruding upward from the first active region is provided. A second semiconductor pillar protruding upward from the second active region is provided. A first gate mask extending to cross over the first and second active regions is provided. The first gate mask surrounds upper sidewalls of the first and second semiconductor pillars. A first gate line formed below the first gate mask, separated from the first and second active regions, and surrounding parts of sidewalls of the first and second semiconductor pillars is provided.

Semiconductor devices semiconductor pillars and method of fabricating the same

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Suwon-si, South Korea

Jong-Hyuk Kang