Semes Co., Ltd.

Jong Hyeon Woo

Seung Hoon Oh

Young Jin Kim

Young Jun Choi

Jin Tack Yu

Young Seop Choi

Bu Young Jung

Byung Sun Bang

Sang Min Lee

Sang Hyun Son

Mi So Park

Yong-Jun Seo

Jin Mo Jae

Hwan Bin Kim

An apparatus for treating a substrate includes a vessel having a sealable process space formed therein in which the substrate is accommodated, a supply port that is provided inside a wall of the vessel and that supplies a process fluid into the process space, an exhaust port provided inside the wall of the vessel and spaced apart from the supply port, and a buffer member provided in the process space, the buffer member being provided in a position overlapping with the supply port and the exhaust port when viewed from above. The buffer member includes a sidewall portion that is located outward of the supply port and the exhaust port and that makes contact with the wall of the vessel and an upper wall portion having a through-hole formed therein to correspond to a center of the substrate, the through-hole forming a straight flow path in an up/down direction.

Substrate treating apparatus and filler member provided therein

A substrate type sensor provided in an atmosphere accompanied by a temperature change to measure a horizontality of a support member that supports a substrate is disclosed. The substrate type sensor may include a base having a shape of the substrate, one or more sensors provided in the base and including 3 or more axis acceleration sensors or 6 or more axis measurement units (IMUs), a receiver configured to receive data collected by the one or more sensors and a power source configured to provide electric power to the one or more sensors and the receiver.

Substrate type sensor for measuring horizontality of substrate support member provided in atmosphere accompanied by temperature change, method for measuring horizontality of substrate support member by using the same, and non-transitory computer readable medium

A substrate processing method includes forming a high surface tension liquid film by supplying high surface tension liquid on a substrate surface, replacing the high surface tension liquid film with low surface tension liquid by supplying the low surface tension liquid to a center area of a substrate so that the low surface tension liquid impinges on the high surface tension liquid film formed on the center area of the substrate, and supplying high surface tension liquid for a predetermined period of time during the supplying the low surface tension liquid.

Substrate processing method and substrate processing apparatus

An embodiment of the present invention provides a substrate processing method. The substrate processing method, which performs a liquid processing process by injecting a processing liquid on a substrate on a spin chuck disposed inside a plurality of recovery cups that are disposed in multiple layers, includes: in a transitional period of time in which height change of any one of the recovery cups occurs, adjusting rotational speed of the spin chuck, which is configured to support the substrate, in conjunction with the height change of the recovery cup.

Method and apparatus for processing substrate

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Asan-si, South Korea

Jong Hyeon Woo