Seoul Viosys Co., Ltd.

Seoul Semiconductor Co., Ltd.

Jong Hyeon Chae

Jong Min Jang

Won Young Roh

Min Woo Kang

Ho Joon Lee

Seong Gyu Jang

Hyun A Kim

Daewoong Suh

Joon Sup Lee

Chung Hoon Lee

Chang Yeon Kim

Dae Woong Suh

Joon Sub Lee

Seom Geun Lee

Kyu Ho Lee

Chi Hyun In

Dae Sung Cho

Seong Kyu Jang

Seon Min Bae

So Ra Lee

Kyung Hee Ye

Kyoung Wan Kim

Se Hee Oh

Yong Woo Ryu

Chang Hoon Kim

Motonobu Takeya

Jong Ik Lee

Seung Sik Hong

Sung Su Son

Jae Hee Lim

Jun Yong Park

Sung Hyun Lee

Seong Su Son

Hwa Mok Kim

Chan Seob Shin

Chang Suk Han

Ju Yong Park

Ik Kyu You

Seung Hyun Kim

Jong Kyu Kim

Hyoung Jin Lim

Dae Seok Park

Hee Sub Lee

Yeon Cheol Cho

Cun Bok Jeong

Chi Hyung In

A light emitting device for a display including a transparent member laterally extending in a first direction and having a first region and a second region surrounding the first region, first to third light emission regions disposed on the transparent member, a support substrate, first to fourth electrode pads disposed between the transparent member and the support substrate, and vias electrically connecting the electrode pads to the light emission regions, respectively, in which the fourth electrode pad is electrically connected to at least one of the vias, each light emission region is disposed in the first region and does not overlap the second region in a second direction, and the fourth electrode pad overlaps one of the vias and one of the light emission regions in the second direction, and the one of the vias and the one of the light emission regions are separated from each other.

LED unit for display and display apparatus having the same

A light emitting diode pixel for a display including a first LED sub-unit, a second LED sub-unit disposed on a first portion of the first LED sub-unit, and a third LED sub-unit disposed on a second portion of the second LED sub-unit, in which each of the first, second, and third LED sub-units includes a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, light generated from the first LED sub-unit is configured to be emitted outside of the light emitting diode pixel through a third portion of the first LED sub-unit different from the first portion, and light generated from the second LED sub-unit is configured to be emitted outside of the light emitting diode pixel through a fourth portion of the second LED sub-unit different from the second portion.

Lighting emitting stacked structure and display device having the same

A light emitting device for a display including a first LED sub-unit, a second LED sub-unit disposed on the first LED sub-unit, a third LED sub-unit disposed on the second LED sub-unit, electrode pads disposed below the first LED sub-unit, and a planarization layer disposed between the first and second LED sub-units and being light transmissive, in which the electrode pads include a common electrode pad electrically connected in common to the first, second, and third LED sub-units, first, second, and third electrode pads connected to the first, second, and third LED sub-units, respectively, the first, second, and third LED sub-units are independently drivable, light generated in the first LED sub-unit is configured to be emitted to the outside through the second and third LED sub-units, and light generated in the second LED sub-unit is configured to be emitted to the outside through the third LED sub-unit.

Light emitting device with LED stack for display and display apparatus having the same

A light emitting device for a display including a first LED sub-unit laterally extending along a first direction, a second LED sub-unit, and a third LED sub-unit, electrode pads each overlapping at least a portion of the first LED sub-unit along a vertical direction and electrically connected to at least one of the first, second, and third LED sub-units, a lower insulation layer having a first surface extending in the first direction, a molding member covering each of the first LED sub-unit, the second LED sub-unit, and the third LED sub-unit, and lead electrodes electrically connected to the electrode pads and extending along the first surface and a side surface of the lower insulation layer, in which a portion of an outer region of each of the lead electrodes is disposed inside the outer boundary of the molding member when viewed in a cross-section.

A display device includes a plurality of pixel tiles spaced apart from each other, each of the pixel tiles including a substrate and a plurality of light emitting stacked structures disposed on the substrate, in which a distance between two adjacent light emitting stacked structures in the same pixel tile is substantially equal to a shortest distance between two adjacent light emitting stacked structures of different pixel tiles.

Display device having light emitting stacked structure

A light-emitting diode (LED) unit for a display including a plurality of pixels each including a first light emitting cell, a second light emitting cell, and a third light emitting cell, each of the first, second, and third light emitting cells including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer, a first wavelength converter configured to convert a wavelength of light emitted from the first light emitting cell, a second wavelength converter configured to convert a wavelength of light emitted from the second light emitting cell, in which the first, second, and third light emitting cells of each pixel share the first conductivity type semiconductor layer.

Light-emitting diode unit for display comprising plurality of pixels and display device having same

A light module including a circuit substrate and a light emitter, the light emitter including a light source configured to generate light and including a first epitaxial layer, a second epitaxial layer, and an active layer, an insulation layer covering the light source, a first electrode electrically connected to the first epitaxial layer, a light guide configured to guide light generated from the light source, a transparent material covering the light source, and an angle controller disposed on the transparent material, in which the light guide has a guide hole filled with the transparent material, and a refractive index of the light guide is different from that of the light source.

Light emitting stacked structure including epitaxial layers connecting with electrodes and display device having the same

A light emitting diode pixel for a display includes a first subpixel including a first LED sub-unit, a second subpixel including a second LED sub-unit, a third subpixel including a third LED sub-unit, and a bonding layer overlapping the first, second, and third subpixels, in which each of the first, second, and third LED sub-units includes a first type of semiconductor layer and a second type of semiconductor layer, each of the first, second, and third LED sub-units is disposed on a different plane, and light generated from the second subpixel is configured to be emitted to an outside of the light emitting diode pixel by passing through a lesser number of LED sub-units than light generated from the first subpixel and emitted to the outside.

A display apparatus including a plurality of pixel regions disposed on a support substrate, each of the pixel regions including a plurality of subpixel stacks including a first epitaxial stack, a second epitaxial stack, and a third epitaxial stack, in which light generated from the first epitaxial stack is to be emitted to the outside of the display apparatus through the second and third epitaxial stacks, light generated from the second epitaxial stack is to be emitted to the outside of the display apparatus through the third epitaxial stack, during operation, one of the subpixel stacks within each pixel region is configured to be selected and driven, and at least one subpixel stack further includes an electrode disposed between the first epitaxial stack and the support substrate to be in ohmic contact with the first epitaxial stack.

A display device including a substrate, a light emitting stacked structure disposed on the substrate and including a plurality of epitaxial sub-units disposed one over another, a first adhesive layer bonding the epitaxial sub-units to the substrate; and a line part disposed on the substrate and configured to apply a light emitting signal to each of the epitaxial sub-units, in which the light emitting stacked structure is configured to provide light having various colors by a combination of light emitted from each of the epitaxial sub-units, and the first adhesive layer includes a conductive and non-transparent material.

Light emitting stacked structure and display device having the same

A display panel including a circuit board having pads thereon, and a plurality of pixel regions arranged on the circuit board, each of the pixel regions including a first LED stack disposed on the circuit board, a first bonding layer disposed between the first LED stack and the circuit board, a second LED stack disposed on the first LED stack, a third LED stack disposed on the second LED stack, first through-vias passing through the first LED stack and the first bonding layer, second through-vias passing through the second LED stack, and third through-vias passing through the third LED stack, in which the first through-vias pass through the first LED stack and the first bonding layer, and are connected to the pads of the circuit board.

LED display panel and led display apparatus having the same

A light emitting device for a display including a first LED stack configured to generate light having a first peak wavelength, a second LED stack disposed under the first LED stack, and configured to generate light having a second peak wavelength, a third LED stack disposed under the second LED stack, and configured to generate light having a third peak wavelength; and a floating reflection layer disposed over the first LED stack, in which the first peak wavelength is longer than the second and third peak wavelengths, the first LED stack has a roughened surface to increase the luminous intensity of the light generated in the first LED stack entering the second LED stack, and the floating reflection layer has a high reflectance of 80% or more over light having the first peak wavelength.

Light emitting device for display and display apparatus having the same

A light emitting device including a first LED sub-unit having a thickness in a first direction, a second LED sub-unit disposed on a portion of the first LED sub-unit in the first direction, each of the first and second LED sub-units comprising a first-type semiconductor layer, a second-type semiconductor layer, and an active layer, a reflective electrode disposed adjacent to the first LED sub-unit and electrically connected to the first-type semiconductor layer of the first LED sub-unit, and a first ohmic electrode forming ohmic contact with the second-type semiconductor layer of the first LED sub-unit, in which the active layer of the first LED sub-unit is configured to generate light, includes AlGaInP (0≤x≤1, 0≤y≤1), and overlaps the active layer of the second LED sub-unit in the first direction, and the active layer of the second LED sub-unit includes the same material as the active layer of the first LED sub-unit.

Light emitting diode for display and display apparatus having the same

A displaying apparatus includes a pixel unit. The pixel unit includes at least one pixel having a light emitting device and a light conversion layer for converting a first wavelength of light of the light emitting device into a second wavelength of light different from the first wavelength; and an insulation layer covers side surfaces of the light emitting device and the light conversion layer.

Displaying apparatus having light emitting device, method of manufacturing the same and method of transferring light emitting device

A light emitting device for a display including a first LED stack, a second LED stack disposed under the first LED stack, a third LED stack disposed under the second LED stack, and including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, a surface protection layer at least partially covering side surfaces of the first LED stack, the second LED stack, or the third LED stack, a first bonding layer interposed between the second LED stack and the third LED stack, a second bonding layer interposed between the first LED stack and the second LED stack, lower buried vias passing through the second LED stack and the first bonding layer, and electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer of the third LED stack, respectively, and upper buried vias passing through the first LED stack.

Growing community of inventors

Ansan-si, South Korea

Jong Hyeon Chae