Hynix Semiconductor Inc.

Jong Hye Cho

Whee Won Cho

Eun Soo Kim

A method of forming isolation layers of a semiconductor memory device. In accordance with an embodiment of the invention, a semiconductor substrate in which trenches are formed is provided. A first dielectric layer is formed over the semiconductor substrate including the trenches. An opening width of the trench is widened by performing a first etch process to remove a part of the first dielectric layer, followed by an annealing process. Fluorine-containing impurities formed in the first dielectric layer as a result of the etching and annealing processes are removed by performing a second etch process. A second dielectric layer is formed over the semiconductor substrate including the first dielectric layer.

Method of forming isolation layer of semiconductor memory device

The present invention relates to a method of forming an isolation layer of a semiconductor memory device. According to a method of fabricating a semiconductor memory device in accordance with an aspect of the present invention, a tunnel insulating layer and a charge trap layer are formed over a semiconductor substrate. An isolation trench is formed by etching the charge trap layer and the tunnel insulating layer. A passivation layer is formed on the entire surface including the isolation trench. A first insulating layer is formed at a bottom of the isolation trench. Portions of the passivation layer, which are oxidized in the formation process of the first insulating layer, are removed. A second insulating layer is formed on the entire surface including the first insulating layer.

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Seoul, South Korea

Jong Hye Cho