Samsung Electronics Co., Ltd.

Jong Hun Pi

Sang Ki Nam

Kyu Hee Han

Sung Yong Lim

Min Ju Kim

Young Do Kim

Chan Soo Kang

Jung Mo Yang

Do Hoon Kwon

An RF sensing apparatus configured for use with a plasma processing chamber includes a penetration unit opened in an up/down direction, a main return path unit surrounding all or a portion of the penetration unit, and a secondary return path unit located between the penetration unit and the main return path unit, spaced apart from the main return path unit, and surrounding all or a portion of the penetration unit. The main return path unit and the secondary return path unit include a path through which a current flows in one of the up/down directions.

RF sensing apparatus of plasma processing chamber and plasma processing chamber including same

Growing community of inventors

Gyeongsangbuk-do, South Korea

Jong Hun Pi