Samsung Electronics Co., Ltd.

Jong Hun Pi

Sang Ki Nam

Doug Yong Sung

Kyu Hee Han

Se Jin Oh

Min Ju Kim

Young Do Kim

Sung Yong Lim

Jung Min Ko

Chan Soo Kang

Do Hoon Kwon

Yeong Kwang Lee

Jung Mo Yang

A plasma processing apparatus includes; a housing including a first side wall and a second side wall, wherein the housing defines a processing region in which plasma is generated, an optical source unit disposed on the first side wall in alignment with the viewing window, wherein the optical source unit is configured to irradiate the processing region with incident light through the viewing window, a reflector disposed on the second side wall of the housing, wherein the reflector reflects a portion of the incident light irradiating the processing region to generate reflected light, a spectrometer configured to receive the reflected light from the reflector through the viewing window and the optical source unit and a controller configured to determine density of the active species gas within the processing region in relation to the incident light and the reflected light.

Plasma processing apparatus and method of manufacture

An RF sensing apparatus configured for use with a plasma processing chamber includes a penetration unit opened in an up/down direction, a main return path unit surrounding all or a portion of the penetration unit, and a secondary return path unit located between the penetration unit and the main return path unit, spaced apart from the main return path unit, and surrounding all or a portion of the penetration unit. The main return path unit and the secondary return path unit include a path through which a current flows in one of the up/down directions.

RF sensing apparatus of plasma processing chamber and plasma processing chamber including same

Growing community of inventors

Suwon-si, South Korea

Jong Hun Pi