Lg Philips Lcd Co., Inc.

Jong Hoon Yi

Jeong Hyun Kim

Sang Gul Lee

Youn Gyoung Chang

Jae Kyun Lee

Se June Kim

Sang Hun Oh

Soo Mahn Kim

Barrier lines are formed on a substrate to define column areas between adjacent barrier lines. A color filter is then formed using continuous ink ejection in at least one of the column areas.

Liquid crystal display device with an ink-jet color filter and process for fabricating the same

The present invention is directed towards TFT-LCD devices and methods to manufacture the same. The devices of the present invention includes a gate electrode structure including an active layer and agate insulator, a protective layer formed over and along the sides of the gate electrode structure, contact layers formed on sides of the gate electrode structure and on a substrate, and source and drain electrodes on the contact layers.

Reflective liquid crystal display device having a TFT as a switching element and method for fabricating the same

Fabrication of a polysilicon TFT having a lightly doped drain or offset structure. Fabrication includes forming a semiconductor layer, a gate insulating film, and a gate electrode on a substrate. Then, forming lightly doped impurity regions in the semiconductor layer on both sides of the gate electrode. Next, forming an insulating film having a thickness that gradually becomes thinner away from the gate electrode. Then, forming heavily doped impurity regions in the lightly doped impurity regions in the semiconductor layer on both sides of the gate, resulting in regions with continuously varied impurity concentrations.

Method for fabricating polysilicon TFT

A TFT type optical detecting sensor includes a sensor TFT for generating optical current by detecting light reflected from an object, a storage capacitor for storing charges of the optical current, and a switching TFT for controlling releasing of the charges stored in the storage capacitor. The storage capacitor is made of a transparent conductive material, such that light is transmitted from a light source through the storage capacitor to the object.

Thin film transistor type photo sensor

A sensor TFT includes a substrate, a gate electrode formed on the substrate, a semiconductor layer patterned on the insulating layer to generate an optical current using received light, source and drain electrodes formed on the semiconductor layer, the source and drain electrodes being spaced apart from each other, and a conductive channel defined by an area between the source and drain electrodes, wherein the conductive channel is not rectangular-shaped, such that the channel width is increased for a fixed channel length.

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Seoul, South Korea

Jong Hoon Yi