Samsung Electronics Co., Ltd.

Jong-Hoon Na

Tae-Yong Kim

Young-Woo Park

Dong-Sik Lee

Jee-Hoon Han

Jang-Hyun You

Dong-Hwa Kwak

Su-Jin Park

Jong-Min Lee

A semiconductor device includes first, second, and third conductive lines, each with a respective line portion formed over a substrate and extending in a first direction and with a respective branch portion extending from an end of the respective line portion in a direction different from the first direction. The branch portion of a middle conductive line is disposed between and shorter than the respective branch portions of the outer conductive lines such that contact pads may be formed integral with such branch portions of the conductive lines.

Semiconductor device and method of fabricating the same

A method of fabricating a nonvolatile memory device includes providing a substrate having active regions defined by a plurality of trenches, forming a first isolation layer on the substrate having the plurality of trenches, forming a sacrificial layer on the first isolation layer to fill the trenches, the sacrificial layer including a first region filling lower portions of the trenches and a second region filling portions other than the lower portions, removing the second region of the sacrificial layer, forming a second isolation layer on the first isolation layer and the first region of the sacrificial layer, forming air gaps in the trenches by removing the first region of the sacrificial layer, and removing a portion of the first isolation layer and a portion of the second isolation layer while maintaining the air gaps.

NAND flash memory device

Method of fabricating a nonvolatile memory device

Growing community of inventors

Seongnam-si, South Korea

Jong-Hoon Na