Industrial Technology Research Institute

Jong-Hong Lu

Sheng-Ju Liao

Huai-Luh Chang

Geoffrey Wen-Tai Shuy

Yuh-Fwu Chou

Yi-Ping Huang

Song-Wein Hong

Chiung-Hsiung Chen

Ho-Yin Pun

Ruey-Cheng Huang

A self-organized nanometer interface structure is disclosed. During the reactive sputtering process, the chemical dynamics difference among reactants induces self-organization to form a special nanometer interface structure. The nanometer interface structure naturally form an interface potential difference so that it has a rectifying effect in a particular range of potential variation range. Therefore, it functions like a diode. Such a self-organized nanometer interface structure can be used in the manufacturing of diodes, transistors, light-emitting devices, and sonic devices. The invention has the advantages of a wide variety of material selections, highly compatible processes, easy operations, and low-cost fabrications.

Self-organized nanometer interface structure and its applications in electronic and opto-electronic devices

This invention provides a concept of using porous materials on ceramic substrate planarization. This planarized substrate consists of a ceramic substrate, a buffer layer, and a nanostructure layer. The ceramic substrate provides structural strength and surface-mount capability. The buffer layer provides the adhesion between the substrate and the nanostructure layer. The nanostructure layer provides the required surface smoothness of the ceramic substrates for performing thin-film processing techniques and enhances adhesion for metallization and electronic materials.

Planarization of ceramic substrates using porous materials

Growing community of inventors

Taipei, Taiwan

Jong-Hong Lu