Samsung Electronics Co., Ltd.

Amosense Co., Ltd

Skc Co., Ltd.

Pacific Corporation

Ricoh Company, Ltd.

Lg Display Co., Ltd.

Korea Institute of Science and Technology

Digital Genomics Inc.

Dexelion Inc.

Daebong Ls, Ltd

Daebong Live Feed Fishery Association Corp.

Jong Ho Park

Sang Jin Hyun

Wan Don Kim

Byoung Hoon Lee

Kil Jae Jang

Dong Hoon Lee

Ki Chul Kim

Jeong Hyuk Yim

Ji Hyun Park

Yong Lae Yi

Seung Hyun Baek

Jin Hee Jeon

Jong Ho Lee

Seung Hwan Kim

Kenji Nakamura

Seung Eun Lee

Jin Hwan Kim

Yong Jin Lee

Jung Min Park

Duck Hee Kim

Seung Yong Hyung

Kohta Sakaya

Dong Soo Lee

Kuniyori Takano

Chong Min Kyung

Doo Suk Kang

Ho Sik Rho

Sang Jin Lee

Yeong Cheon Kim

Jee Hoon Lee

Jeong Min Park

Jeong Ho Yoon

Hoon Joo Na

Won Keun Chung

Hyun Sang Park

Yong Kwan Lee

Hyun Seok Shin

Soon Hyuk Hong

Dae Gi Ryu

Min Sik Jang

Gi Oh Kim

Hyeon Jun Baek

Weon Hong Kim

Seung Ha Oh

Jong Owan Kim

Jun Young Oh

Ok Sub Lee

Hak Hee Kang

Kil Joong Kim

Sang Yong Kim

Jae Won You

Ok Sob Lee

Seung Hyuk Chang

Kang Bong Lee

Ji-heon Oh

Hyun Sik Shim

Jong Eon Hong

Chang Sub Lee

Yun Sik Nam

Su Young Bae

Su Sun An

Young Hun Byon

Bo Sub Lee

Sang Rhin Lee

Hae Kwang Lee

Yong Ho Ha

Hey Jin Jung

Ki Wha Lee

Ki Tack Nam

Jong Il Kim

Ki Chui Kim

Hyun Jun Kim

Myeung Su Ku

Kun Hak Lee

In Ho Yun

Kug Hwan Kim

Hye Ri Hong

Chun Gul Lee

Ja Eun Kim

Young-Hwa Song

Sung Han Kim

Eui Dong Son

Jong Chang Lee

Dong Yoon Park

Se Nyun Kim

Min Jae Chung

Duk Hee Kim

Yong Gil Kim

Gyeong Ju Kim

Se Hyun Park

Ki Cheon Song

Jung Kyun Han

A semiconductor device includes first and second active patterns disposed on a substrate, a field insulating film disposed between the first and second active patterns, a first gate structure intersecting the first active pattern, and a second gate structure intersecting the second active pattern, in which the first gate structure includes a first gate insulating film on the first active pattern, a first upper insertion film on the first gate insulating film, and a first upper conductive film on the first upper insertion film, and the second gate structure includes a second gate insulating film on the second active pattern, a second upper insertion film on the second gate insulating film, and a second upper conductive film on the second upper insertion film. Each of the first and second upper insertion films may include an aluminum nitride film. Each of the first and second upper conductive films may include aluminum.

Semiconductor device

A media clock recovery device, a method for recovering media clock, and an electronic device are provided. The media clock recovery device comprising processing circuitry configured to determine whether a time stamp is normal, the time stamp being received in a packet through a network, calculate an average time interval of a dummy time stamp, the calculated average time interval of the dummy time stamp being used for generating a media clock in response to determining the time stamp is not normal, generate the dummy time stamp based on the calculated average time interval of the dummy time stamp, wherein the processing circuitry is configured to determine the time stamp is not normal, in response to the packet not being received within a time threshold value from a reception time of a previously received packet.

Media clock recovery device and a method for recovering media clock, and an electronic device

A semiconductor device is provided. The semiconductor device comprising a multi-channel active pattern on a substrate, a high dielectric constant insulating layer formed along the multi-channel active pattern on the multi-channel active pattern, wherein the high dielectric constant insulating layer comprises a metal, a silicon nitride layer formed along the high dielectric constant insulating layer on the high dielectric constant insulating layer and a gate electrode on the silicon nitride layer.

Semiconductor device including work function adjusting metal gate structure

The present disclosure provides a magazine supporting equipment for supporting a magazine with multiple input ports. The magazine supporting equipment comprises a contact plate, a first sidewall plate, and a second sidewall plate. The contact plate is in contact with the magazine. The first sidewall plate extends vertically from one end of the contact plate. The second sidewall plate parallel is to the first sidewall plate and extends vertically from one end to the other end of the contact plate. The first sidewall plate extends along at least a part of a first sidewall of the magazine. The second sidewall plate extends along at least a part of a second sidewall of the magazine. The first sidewall plate and the second sidewall plate include control openings through which gas flows in and out.

Magazine supporting equipment and semiconductor manufacturing apparatus including the same

A semiconductor device including: a first transistor which include a first gate stack on a substrate; and a second transistor which includes a second gate stack on the substrate, wherein the first gate stack includes a first ferroelectric material layer disposed on the substrate, a first work function layer disposed on the first ferroelectric material layer and a first upper gate electrode disposed on the first work function layer, wherein the second gate stack includes a second ferroelectric material layer disposed on the substrate, a second work function layer disposed on the second ferroelectric material layer and a second upper gate electrode disposed on the second work function layer, wherein the first work function layer includes the same material as the second work function layer, and wherein an effective work function of the first gate stack is different from an effective work function of the second gate stack.

A shielding unit for a wireless power transfer module and the wireless power transfer module including the same are provided. The shielding unit for the wireless power transfer module according to an embodiment of the present invention comprises a magnetic field shielding sheet for shielding a magnetic field generated in a predetermined frequency band and condensing the same in a desired direction, and a magnetic body receiving portion which is formed through the magnetic field shielding sheet such that a magnetic body for including magnetic force lines generated from a permanent magnet can be inserted therein, wherein the magnetic body receiving portion is arranged to have a relatively larger size than the magnetic body.

Shielding unit for wireless power transmission module and wireless power transmission module including same

Provided are a back cover for a portable terminal and a back cover-integrated antenna module including the same. A back cover for a portable terminal according to an embodiment of the present invention is disposed on the back surface of a portable terminal body, and includes a pattern portion, which is formed to pass through the back cover formed of a metal material at a region corresponding to at least one antenna and configured to reduce generation of an eddy current.

Back cover for portable terminal and back cover-integrated antenna module including the same

A camera system with a complementary pixlet structure and a method of operating the same are provided. The camera system includes an image sensor that includes at least one 2&#xd7;2 pixel block including a first pixel, a second pixel, and two third pixels&#x2014;the two third pixels are disposed at positions diagonal to each other in the 2&#xd7;2 pixel block and include deflected small pixlets, which are deflected in opposite directions to be symmetrical to each other with respect to each pixel center, and large pixlets adjacent to the deflected small pixlets, respectively, and each pixlet includes an photodiode converting an optical signal to an electrical signal and a depth calculator that receives images acquired from the deflected small pixlets of the two third pixels and calculates a depth between the image sensor and an object using a parallax between the images.

Camera system with complementary pixlet structure

Disclosed is an electronic device including a plurality of electrodes selectively connectable to a touch sensor or one or more biometric sensors; and a processor configured to receive a user input through the plurality of electrodes in a state in which the touch sensor and the plurality of electrodes are connected; perform an operation relating to the touch sensor when where the user input satisfies a first condition; connect the plurality of electrodes to the one or more biometric sensors when where the user input satisfies a second condition; and obtain a plurality of pieces of biometric information according to a pre-determined sequence through the plurality of electrodes connected with the one or more biometric sensors.

Electronic device for measuring biometric information

A semiconductor device according to an example embodiment of the present inventive concept includes a substrate having a first region and a second region horizontally separate from the first region; a first gate line in the first region, the first gate line including a first lower work function layer and a first upper work function layer disposed on the first lower work function layer; and a second gate line including a second lower work function layer in the second region, the second gate line having a width in a first, horizontal direction equal to or narrower than a width of the first gate line in the first direction, wherein an uppermost end of the first upper work function layer and an uppermost end of the second lower work function layer are each located at a vertical level higher than an uppermost end of the first lower work function layer with respect to a second direction perpendicular to the first direction.

Semiconductor devices

A semiconductor device and a method for fabricating the same are provided. The semiconductor device includes first and second gate stack structures formed in first and second regions, respectively, wherein the first gate stack structure is formed adjacent a first channel region and comprises a first gate insulating film having a first thickness formed on the first channel region, a first function film having a second thickness formed on the first gate insulating film and a first filling film having a third thickness formed on the first function film, wherein the second gate stack structure is formed adjacent a second channel region and comprises a second gate insulating film having the first thickness formed on the second channel region, a second function film having the second thickness formed on the second gate insulating film and a second filling film having the third thickness formed on the second function film, wherein the first and second function films, respectively, comprise TiN and Si concentrations that are different from each other.

Semiconductor device and method for fabricating the same

Provided are an attractor for PMA wireless charging type wireless power reception module and a manufacturing method thereof, and a wireless power reception module having the same. The attractor for PMA wireless charging type wireless power reception module according to an embodiment of the present invention comprises: a wireless power reception module; and a thin magnetic piece formed of a magnetic material having a saturation magnetic flux density of 0.5 tesla or more such that a change in the voltage value of a hall sensor of a certain value or more can be detected in both an aligned state when a wireless power transmission module is aligned and a non-aligned state when the wireless power reception module is not in line with the wireless power transmission module within a non-alignment region having a certain area including the aligned state.

Attractor for PMA wireless charging type wireless power reception module and manufacturing method therefor, and wireless power reception module having same

The present disclosure relates to a hydrogen peroxide vapor decomposition and detoxification system including a hydrogen peroxide vapor suction unit which sucks hydrogen peroxide vapor in a target space to be sterilized, a hydrogen peroxide vapor decomposition and detoxification unit which decomposes the sucked hydrogen peroxide vapor, a vapor discharge unit which discharges decomposition products of the hydrogen peroxide vapor, and a control unit which controls an amount of vapor suction of the vapor suction unit, decomposition and detoxification of the hydrogen peroxide vapor decomposition and detoxification unit, and the vapor discharge unit.

Hydrogen peroxide vapor detoxifying system using honeycomb structure

Growing community of inventors

Seoul, South Korea

Jong Ho Park