Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Electronics and Telecommunications Research Institute

Korea Advanced Institute of Science and Technology

Korea Research Institute of Bioscience and Biotechnology

Jong-Ho Park

Jung-Dal Choi

Tae-Jin Lee

Young-Soo Kim

Sung-Hun Lee

Joon-Hee Lee

Dong-hyun Kim

Yong-Seok Kim

Joon-Sung Lim

Kyeong-Koo Chi

Sung-Hoi Hur

Seung-Pil Chung

Hyun-Suk Kim

Woo-Sik Kim

Jong-Won Kim

Sang-in Lee

Sang-Hoon Kim

Kyung-Hun Jang

Young Woo Park

Dong-Jun Lee

Chang-Won Choi

Seung-ryul Lee

Ji Hyun Park

Hyo Jeong Hong

Hyun-Sik Shim

Jong-won Kim

Jung-Hoon Suh

Hee-Jueng Lee

Shin-woo Nam

Dae-hyuk Chung

Bum-su Kim

Jeong-sik Choi

Joon-Goo Jung

So-Young Choi

Young-Soon Jang

Yeo-cheol Yoon

Ji-hwan Choi

Kwang-Ok Ko

Seon-Tae Kim

Jeong Ho Yoon

Semi Kim

Jin-hyun Shin

Jin-Taek Park

Kiwon Jo

Oui-serg Kim

Hyun-Chul Back

Suk-Joon Son

Byung-Tae Ahn

Ok-Cheon Hong

Chang-Young Oh

Heekyung Jung

So Jeong Park

Hyo-soo Kim

Young-soon Jang

Kun-bum Park

Young-hwan Yoon

Sun-Il Kim

Ji-Hwan Jeon

Gi-Oh Kim

Kwang Pyo Lee

Woo-Suk Cha

Deok-Min Lee

Jun-Keun Song

A memory device includes a memory cell on a first region of a substrate. An active region is in a second region neighboring the first region of the substrate, and an extension direction of the active region has an acute angle with the &#x3c;110&#x3e; direction of the substrate. A transistor serving as a peripheral circuit is on the second region of the substrate. In the memory device, defects or failures due to a crystal defects or a dislocation of the substrate may decrease.

Semiconductor device including different orientations of memory cell array and peripheral circuit transistors

An electromagnetic actuator includes a first body which includes a biased permanent magnet, a magnetic path control device which is disposed to adjust a magnetic path produced by the biased permanent magnet, at least one core which is disposed to face the biased permanent magnet and the magnetic path control device, and a coil which is wound on the at least one core so as to reinforce or cancel the magnetic path produced by the biased permanent magnet; and a second body which is separated from the biased permanent magnet and the magnetic path control device when the at least one core is between the second body and at least one of the biased permanent magnet and the magnetic path control device.

Electromagnetic actuator

A portable terminal includes an apparatus for controlling an operation of a mobile terminal. More particularly, an apparatus and a method sets a menu to control a mobile terminal in a specific region of an image stored in advance. A relevant function is performed by selecting the specific region of the image in which the menu has been set in the mobile terminal, thereby performing the relevant function fast and conveniently without separately selecting a menu (entering a menu). The apparatus includes a controller. The controller selects a specific region from an output image, sets a menu for controlling a function of the mobile terminal at the specific region, and stores the image where the menu has been set.

Apparatus and method for controlling functions of mobile terminal

A memory device includes a substrate having an active region defined therein that extends linearly along a first direction. The device also includes a select line on the substrate and extending along a second direction to perpendicularly cross the active region, first and second floating gate patterns on the active region and spaced apart along the first direction, and first and second dielectric patterns on respective ones of the first and second floating gate patterns. The device further includes first and second word lines on respective ones of the first and second dielectric patterns and extending in parallel with the select line along the first direction. A first area of overlap of the first word line with the first floating gate pattern and the first dielectric pattern is less than a second area of overlap of the second word line with the second floating gate pattern and the second dielectric pattern. The first word line may be disposed between the select line and the second word line.

Non-volatile memory devices with non-uniform floating gate coupling

Disclosed herein is a method of selecting a relay node in a mobile ad-hoc network. The relay node selection method includes updating a neighbor node list based on messages received from one or more other nodes, and selecting a 1-hop neighbor node having a highest Multi-Point Relay (MPR) selector counter (MSC) value, from among one or more 1-hop neighbor nodes included in the updated neighbor node list, as an MPR node. Therefore, the present invention can prevent unnecessary channel competition and conflicts between nodes and improve network performance.

Method of selecting relay mode in mobile ad-hoc network

A grid-connected power storage system for coupling a power generation system to a grid, including: a main battery for discharging stored power to the load system; at least one additional battery coupled to the main battery for discharging stored power to the load system; a bidirectional converter coupled to the main and additional batteries, and including a plurality of switches for performing a conversion between a DC link voltage, between the power generation system and the grid, and a battery voltage, a first switch of the plurality of switches corresponding to the main battery and a second switch of the plurality of switches corresponding to the additional battery, wherein the first and second switches are connected to each other in parallel; and an integrated controller for selectively controlling operations of the first switch and the second switch based on an amount of power used by the load system.

Grid-connected power storage system and method for controlling grid-connected power storage system

The present invention relates to an anticancer agent containing a TMPRSS4 (transmembrane protease, serine 4) inhibitor as an effective ingredient, more precisely an anticancer agent containing an inhibitor of TMPRSS4 activity as an effective ingredient. The anticancer agent of the present invention can be used effectively for the treatment of cancer by inhibiting TMPRSS4 expression in cancer cells and thereby inhibiting cancer cell invasion and cancer cell growth.

Anticancer drug comprising inhibitor of TMPRSS4

An interconnection structure for a semiconductor device includes an inter-level insulation layer disposed on a semiconductor substrate. First contact constructions penetrate the inter-level insulation layer. Second contact constructions penetrate the inter-level insulation layer. Metal interconnections connect the first contact constructions to the second contact constructions on the inter-level insulation layer. The first contact constructions include first and second plugs stacked in sequence and the second contact constructions include the second plug.

Methods of forming interconnection structures for semiconductor devices

An interconnection structure includes an inter-level insulation layer disposed on a semiconductor substrate. First contact structures are formed in the inter-level insulation layer. Second contact structures are formed in the inter-level insulation layer and are spaced apart from the first contact structures. First spacers are disposed between the first contact structures and the inter-level insulation layer. Second spacers are disposed between the second contact structures and the inter-level insulation layer. Metal interconnections are disposed on the inter-level insulation layer and connected to the first and second contact structures. The first contact structures include first and second plugs stacked in sequence, the second contact structures include the second plugs, and the first spacers include an upper spacer disposed between the second plug and the inter-level insulation layer.

Interconnection structures for semiconductor devices and methods of forming the same

A semiconductor memory device includes a device isolation layer formed in a semiconductor substrate to define a plurality of active regions. Floating gates are disposed on the active regions. A control gate line overlaps top surfaces of the floating gates and crosses over the active regions. The control gate line has an extending portion disposed in a gap between adjacent floating gates and overlapping sidewalls of the adjacent floating gates. First spacers are disposed on the sidewalls of the adjacent floating gates. Each of the first spacers extends along a sidewall of the active region and along a sidewall of the device isolation layer. Second spacers are disposed between outer sidewalls of the first spacers and the extending portion and are disposed above the device isolation layer. An electronic device including a semiconductor memory device and a method of fabricating a semiconductor memory device are also disclosed.

Semiconductor memory device including double spacers on sidewall of flating gate, electronic device including the same

A nonvolatile memory device may include a substrate having a cell region, and a cell device isolation layer on the cell region of the substrate to define a cell active region. A floating gate may include a lower floating gate and an upper floating gate sequentially stacked on the cell active region, and a tunnel insulation pattern may be between the floating gate and the cell active region. A control gate electrode may be on the floating gate, and a blocking insulation pattern may be between the control gate electrode and the floating gate. More particularly, the upper floating gate may include a flat portion on the lower floating gate and a pair of wall portions extending upward from both edges of the flat portion adjacent to the cell device isolation layer. Moreover, a width of an upper portion of a space surrounded by the flat portion and the pair of wall portions may be larger than a width of a lower portion of the space. Related methods are also discussed.

Non-volatile memory devices having floating gates

A nonvolatile memory device includes a semiconductor substrate, a device isolation film, a tunnel insulation film, a plurality of floating gates, an inter-gate dielectric film, and a control gate pattern. Trenches are formed in the substrate that define active regions therebetween. The device isolation film is in the trenches in the substrate. The tunnel insulation film is on the active regions of the substrate. The plurality of floating gates are each on the tunnel insulation film over the active regions of the substrate. The inter-gate dielectric film extends across the floating gates and the device isolation film. The control gate pattern is on the inter-gate dielectric film and extends across the floating gates. A central region of the device isolation film in the trenches has an upper major surface that is recessed below an upper major surface of a surrounding region of the device isolation film in the trenches. An edge of the recessed central region of the device isolation film is aligned with a sidewall of an adjacent one of the floating gates.

Methods of fabricating nonvolatile memory devices

Growing community of inventors

Seoul, South Korea

Jong-Ho Park