Osram Opto Semiconductors Gmbh

Jong Ho Na

Jürgen Off

Alvaro Gomez-Iglesias

Philipp Drechsel

Thomas Lehnhardt

Xiaojun Chen

Heng Wang

In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence including a first semiconductor region of a first conductivity type, an active zone having a multiple quantum well structure composed of a plurality of quantum well layers and barrier layers, a second semiconductor region of a second conductivity type and a plurality of channels extending through the active zone, wherein the second semiconductor region is located in the channels and is configured for lateral current injection into the active zone, wherein the channels have a first aperture half-angle in the first semiconductor region and a second aperture half-angle in the active zone, and wherein the second aperture half-angle is greater than zero and less than the first aperture half-angle.

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Wuppertal, Germany

Jong Ho Na