Korea Institute of Energy Research

Samsung Electronics Co., Ltd.

Jong-Ho Moon

Seung-yong Lee

Sung-ho Jo

Chang-keun Yi

Ho-jung Ryu

Dong-ho Lee

Young Cheol Park

Jae-hyeon Park

Gyoung-tae Jin

Dal-hee Bae

Do-won Shun

Dal-Hee Bae

Jaehyeon Park

Youngcheol Park

Ji-bong Joo

Dowon Shun

Gyoung Tae Jin

Yoosang Hwang

Kiseok Lee

Sangyeon Han

Seungjae Jung

Taehyun An

Sung-Hwan Jang

Hyungeun Choi

Doyeon Lee

Seong-Jin Jang

Young-cheol Park

Kyomin Sohn

Jaeyoun Youn

Eun-Ji Kim

Hee-Yeon Kim

Jeong-gu Yeo

Hyo Jin Lee

Chisung Oh

Jeom In Baek

Hyoungyol Mun

Tai-Young Ko

Hyung-Sik You

SeungHan Woo

Yong-Ki Kim

Jung-hyun Lee

Hyunuk Kim

Han-Sik Yoo

Soojung Rho

Dong-hyuk Chun

Gyong-Tae Jin

Dowan Shun

Do-Won Sun

Euichul Jeong

Han-sik Yoo

A semiconductor memory device may include a peripheral circuit structure including peripheral circuits integrated on a semiconductor substrate in a first region and a first keypad disposed in a second region; a stack provided on the first region of the peripheral circuit structure, the stack including a plurality of first conductive lines extending in a first direction and are vertically stacked; an upper insulating layer covering the stack; an interconnection layer provided on the upper insulating layer; a penetration plug spaced apart from the stack and is provided to penetrate the upper insulating layer to connect the interconnection layer to the peripheral circuits of the peripheral circuit structure; a molding structure provided on the second region of the peripheral circuit structure and spaced apart from the stack in the first direction; and a penetration structure provided to penetrate the molding structure and vertically overlap with the first keypad.

Semiconductor memory device

Disclosed are a memory device and an operating method thereof. The memory device includes a bitline sense amplifier connected to a bitline and a complementary bitline connected to a memory cell, and a sense amplifier driver circuit. The bitline sense amplifier senses and amplifies a voltage difference by developing a voltage of the bitline and a voltage of the complementary bitline. The sense amplifier driver circuit includes a pull-up circuit adjusting a level of a bitline low-level voltage developed by the bitline sense amplifier to be higher than a ground voltage in response to a first pull-up pulse, and a pull-down circuit adjusting the level of the bitline low level adjusted by the pull-up circuit to be equal to the ground voltage in response to a pull-down pulse. A pulse generator generates the first pull-up pulse and the pull-down pulse based on a command received from a host.

Memory device including bitline sense amplifier and operating method thereof

A three-dimensional semiconductor memory device is provided. The device may include a first substrate including a bit-line connection region and a word-line connection region, a cell array structure on the first substrate, a second substrate including a first core region and a second core region, which are respectively overlapped with the bit-line connection region and the word-line connection region, and a peripheral circuit structure on the second substrate.

Three-dimensional semiconductor memory device

Disclosed herein are an apparatus and method for gas leakage measurement in a high pressure reactor. In particular, the present invention relates to an apparatus for gas leakage measurement in a high pressure reactor including: a gas inlet; a first valve equipped to one side of the gas inlet; a flowmeter; a pressure gauge measuring an internal pressure of the reactor; a gas outlet; and a second valve, wherein if in internal pressure reaches a preset pressure by closing the second valve and injecting a gas to the reactor through the flowmeter in the state of opening the first valve, the gas leakage status in the reactor is measured through pressure changes in the pressure gauge after closing the first valve.

Apparatus and method for gas leakage measurement in a high pressure reactor

A semiconductor device includes first to M-th semiconductor dies stacked in a first direction. Each of the first to M-th semiconductor dies includes a substrate, first to K-th through silicon vias passing through the substrate in the first direction, and a first circuit to receive power through a power supply line electrically connected to the first through silicon via. Each of first to K-th through silicon vias of the N-th semiconductor die is electrically connected to a through silicon via of first to K-th through silicon vias of the (N+1)-th semiconductor die that is spaced apart therefrom in a plan view.

Semiconductor device including through silicon vias distributing current

Disclosed are an apparatus and a method for measuring the height of a solid bed in a high-temperature and high-pressure fluidized bed system, and a fluidized bed system having the solid bed height measuring apparatus. The solid bed height measuring apparatus includes a lower pressure probe mounted at an upper side as high as a first height from a gas distributor of a fluidized bed reactor to measure pressure of the mounted location, and a middle pressure probe mounted at an upper side as high as a second height from the lower probe to measure pressure of the mounted location. An upper pressure probe is mounted at the top of the fluidized bed reactor to measure the inside pressure of the fluidized bed reactor. First and second differential pressure gauges are used for measuring differential pressures.

Apparatus and method for measuring height of solid bed in high-temperature and high-pressure fluidized bed system

Disclosed is provided to overcome problems of conventional methods using each of a solid discharge nozzle and a screw conveyer. According to one exemplary embodiment of the present invention, a fluidized bed system is provided to circulate solids using pressure and density difference. More particularly, a fluidized solid circulation system using pressure and density difference is characterized by comprising: a first fluidized bed reactor; a second fluidized bed reactor; a first cyclone; a second cyclone; a first pressure control valve; a second pressure control valve; a lower loop seal; an upper loop seal; and a control part, thereby circulating the solids between the first fluidized bed reactor and the second fluidized bed reactor.

Fluidized bed solid circulation system using pressure and density difference, fluidized bed reaction system having the same and solid circulation method

An apparatus separating carbon dioxide from combustion gas using separation membranes, which includes: a first separation membrane in which combustion gas is injected into an inlet side of the first separation membrane; a second separation membrane in which residue gas of the first separation membrane is injected into an inlet side of the second separation membrane; and a third separation membrane in which permeate gas of the first separation membrane is injected into an inlet side of the third separation membrane, wherein at least a part of permeate gas of the third separation membrane is captured, and residue gas of the third separation membrane is injected into the inlet side of the first separation membrane or the second separation membrane. The present invention can be easily applied to an actual process by efficiently separating carbon dioxide using separation membranes.

Apparatus for separating CO2 from combustion gas using multi-stage membranes

A desulfurization system removes sulfur ingredients included in synthetic gas generated from gasification of coal in a high temperature dry state. The system includes a desulfurization reactor, a desulfurization cyclone, and first and second regeneration reactors branched with the desulfurization cyclone. A first oxidizing agent is injected to a first oxidizing agent inlet of the first regeneration reactor, and a second oxidizing agent is injected to a second oxidizing agent inlet of the second regeneration reactor. A controller operates one of the first and second regeneration reactors in a regeneration mode, controlling the other to operate in a desulfurization mode.

High temperature dry desulfurization system and method using multi regeneration reactor

A system for preventing a catalyst from overheating is provided. The system includes: a first reactor filled with a catalyst at least in part and configured to receive reaction gas and produce product gas; and a second reactor configured to cool a catalyst discharged from the first reactor. The catalyst is circulated between the first reactor and the second reactor by injecting the catalyst cooled in the second reactor into the first rector.

System and method for preventing catalyst from overheating

The present disclosure relates to a metal-organic framework and a method for preparing the same. In accordance with the present disclosure, a metal-organic framework having large specific surface area can be prepared and the prepared porous material exhibits high carbon dioxide and carbon monoxide adsorption characteristics at room temperature.

Metal-organic frameworks and process of preparing the same

A chemical looping combustion apparatus for solid fuels using different oxygen carriers is provided. The chemical looping combustion apparatus includes: a solid fuel chemical looping combustor configured to receive solid fuels and to produce carbon dioxide and steam by combustion of the solid fuels; a gaseous fuel chemical looping combustor configured to receive gaseous fuels and to produce carbon dioxide and steam by combustion of the gaseous fuels; and a devolatilization reactor configured to produce solids and gases by devolatilizing the solid fuels, and the solid fuels received by the solid fuel chemical looping combustor and the gaseous fuels received by the gaseous fuel chemical looping combustor are the solids and the gases produced by the devolatilization reactor, respectively. Accordingly, a reaction rate and an amount of oxygen transfer can increase, and necessity for low-priced oxygen carriers and a make-up cost of low-priced oxygen carriers can be reduced.

Chemical looping combustion method and apparatus for solid fuels using different oxygen carriers

A bit-line sense amplifier may include a pull-up driving circuit, a pull-down driving circuit and a latch-type sense amplifier. The pull-up driving circuit including a plurality of PMOS transistors connected between a power supply voltage line and a first driving power supply line, and may be configured to provide a first driving current on the first driving power supply line in response to an up control signal. The pull-down driving circuit may be configured to provide a second driving current on a second driving power supply line in response to a down control signal. The latch-type sense amplifier may be connected between the first driving power supply line and the second driving power supply line, and may be configured to sense and amplify a voltage difference between a bit line and a complementary bit line.

Bit-line sense amplifier capable of compensating mismatch between transistors, and semiconductor memory device including the same

A fluidized bed reactor is provided. The fluidized bed reactor includes a screw conveyor configured to penetrate through an upper portion of the fluidized bed reactor and to discharge solid particles to an outside from the fluidized bed reactor. The screw conveyor is configured to have an upper end protrude from the upper portion of the fluidized bed reactor and a lower end located at a height equal to or higher than a height of a distributor of the fluidized bed reactor.

Fluidized bed reactor having screw conveyor and fluidized bed solid circulation system using the same

Growing community of inventors

Seoul, South Korea

Jong-Ho Moon