Sk Innovation Co., Ltd.

Sk-Materials Co., Ltd.

Sk Corporation

Jong Ho Lee

Cheol Woo Kim

Jae Hoon Kwak

Young Bom Kim

Jin Kyung Jo

Yu Na Shim

Kwang Kuk Lee

Min Kyung Seon

Jung Ha Shin

Jin Su Ham

Je Ho Lee

An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an organic phosphate represented by Formula 1 below:

Etching composition, method for etching insulating film of semiconductor devices using the same and method for preparing semiconductor devices

An etching composition contains phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1: wherein, in Formula 1, A is an n-valent radical, where n is an integer of 1 to 6, L is a direct bond or hydrocarbylene, Y is selected from NR, O, PRand S, where Rto Rare independently hydrogen, halogen, a substituted or unsubstituted hydrocarbyl group, or non-hydrocarbyl group, X and Z are independently selected from N, O, P and S, and Rto Rare independently an unshared electron pair, hydrogen, or a substituted or unsubstituted hydrocarbyl group.

Composition for etching, method for etching insulator and method for manufacturing semiconductor device, and novel compounds

The present disclosure relates to a silicon compound represented by Formula 1 below: 

Silicon compound

An etching composition includes phosphoric acid, a silane compound comprising at least one silicon (Si) atom, and an ammonium salt represented by Formula 1 below: 

An etching composition contains phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1: 

An etching composition is provided. The etching composition includes phosphoric acid, phosphoric anhydride, a silane compound represented by Formula 1 below and water: 

Etching composition, method for etching insulating layer of semiconductor devices and method for preparing semiconductor devices

An etchant composition includes phosphoric acid and a silane compound represented by the following Chemical Formula 1: wherein A is an n-valent radical, L is C-Chydrocarbylene, Rto Rare independently hydrogen, hydroxy, hydrocarbyl, or alkoxy, in which Rto Rexist respectively or are connected to each other by a heteroelement, and n is an integer of 2 to 5.

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Yeongju-si, South Korea

Jong Ho Lee