Electronics and Telecommunications Research Institute

Korea Advanced Institute of Science and Technology

University-Industry Cooperation Group of Kyung Hee University

Mvtech

Jong-Heon Yang

Chi-Sun Hwang

Yong Hae Kim

Jae-Eun Pi

Chang-Geun Ahn

Ji Hun Choi

Chan Woo Park

Seong-Mok Cho

Gi Heon Kim

Jaehyun Moon

Chunwon Byun

Joo Yeon Kim

Ansoon Kim

Kyunghee Choi

Seung Youl Kang

Chil Seong Ah

Gun Yong Sung

Tae-Youb Kim

Seon-Hee Park

Byoung-Hwa Kwon

Gun-Yong Sung

Jeho Na

Taeyoub Kim

Won-ju Cho

Chan-Woo Park

Seong-jae Lee

Hee-ok Kim

Chil-Seong Ah

In-Bok Baek

Ki-ju Im

Kyoung Ik Cho

Jae Bon Koo

Sang Hoon Cheon

Hojun Ryu

Hyunkoo Lee

Sung Haeng Cho

In Bok Baek

Chan-Mo Kang

Sujung Kim

Sukyung Choi

Moon-Gyu Jang

Himchan Oh

Sooji Nam

Han-Young Yu

Kukjoo Kim

Jin-Wook Shin

In-bok Baek

Hye Yong Chu

Jeong Ik Lee

Seon Hee Park

Han Young Yu

Won Jae Lee

Chul Woong Joo

Sang Chul Lim

Ji-Young Oh

Taehyoung Zyung

Jonghee Lee

Jong Tae Lim

Hyunsu Cho

Jonghyurk Park

Kyoung-Wan Park

Seunghee Lee

Nae-Man Park

Sung-Min Yoon

Seongjae Lee

O Eun Kwon

SangHee Park

KwangHeum Lee

Ha Kyun Lee

HyeKyoung Yang

An-Soon Kim

Ji-Hun Oh

Provided is a flexible organic light emitting element that may include a flexible substrate, a circuit element layer on the flexible substrate, an emission layer on the circuit element layer, a first encapsulation structure between the flexible substrate and the circuit element layer, and a second encapsulation structure on the emission layer, wherein the first encapsulation structure includes a first inorganic layer and a first organic layer, which are sequentially stacked on an upper surface of the flexible substrate, and the first organic layer includes a first polymer nanocomposite.

Flexible organic light emitting element including encapsulation structure

Disclosed is a meta-structure. The meta-structure includes a lower electrode, a lower insulating layer on the lower electrode, a lower metal oxide layer on the lower insulating layer, a lower metal layer on the lower metal oxide layer, a middle metal oxide layer on the lower metal layer, an upper metal layer on the middle metal oxide layer, an upper metal oxide layer on the upper metal layer, an upper insulating layer on the upper metal oxide layer, and antenna electrodes on the upper insulating layer.

Meta-structure

Disclosed is a meta-structure. The meta-structure includes a lower electrode, a lower insulating layer on the lower electrode, a lower metal oxide layer on the lower insulating layer, a metal layer on the lower metal oxide layer, an upper metal oxide layer on the metal layer, an upper insulating layer on the upper metal oxide layer, and antenna electrodes on the upper insulating layer.

Provided are stretchable electronics and a method for manufacturing the same. The stretchable electronics may include a substrate, a plurality of electronic elements disposed to be spaced apart from each other on the substrate, and a wire structure disposed on the substrate to connect the plurality of electronic elements to each other. The wire structure may include an insulator extending from one of the electronic elements to the other of the adjacent electronic elements and a metal wire configured to cover a top surface and side surfaces of the insulator. The insulator may include at least one bent part in a plan view.

Stretchable electronics and method for manufacturing the same

Provided is an operation method for a digital hologram implementation device including a backlight and a spatial light modulator, the operation method including setting an initial phase value of an optical signal to a remedy phase, computing a reduced phase based on the remedy phase, correcting the remedy phase based on a difference between the reduced phase and a preset optimized phase, determining whether the corrected remedy phase is a stabilized phase, performing forward propagation on the stabilized phase and an amplitude of the optical signal, correcting the amplitude of the optical signal, performing backward propagation on the corrected amplitude and the stabilized phase, and determining whether a phase derived by the backward propagation is an optimized phase.

Operation method for digital hologram implementation device

Provided is a bio-signal detection and stimulation device. The bio-signal detection and stimulation device includes a flexible substrate, a stimulation part on the flexible substrate, and a detection electrode part on the flexible substrate. The stimulation part and the detection electrode part vertically overlap each other, the stimulation part includes an organic light emitting diode (OLED), the stimulation part emits an optical signal, and the detection electrode part detects a bio-signal.

Bio-signal detection and stimulation device

A vertical channel thin film transistor includes substrate, lower source/drain electrode, spacer layer, upper source/drain electrode covering portion of upper surface of the spacer layer, interlayer insulating pattern covering portion of upper surface of the upper source/drain electrode and upper surface of the spacer layer exposed by the upper source/drain electrode, contact hole disposed on the lower source/drain electrode and passing through the interlayer insulating pattern, the upper source/drain electrode, and the spacer layer, active pattern covering inner wall and bottom surface of the contact hole and extending over upper surface of the upper source/drain electrode and upper surface of the interlayer insulating pattern, gate insulating pattern filling portion of the contact hole and extending along upper surface of the active pattern, and gate electrode filling portion of the contact hole and extending along upper surface of the gate insulating pattern.

Vertical channel thin film transistor and method for manufacturing the same

An apparatus which analyses a depth of a holographic image is provided. The apparatus includes an acquisition unit that acquires a hologram, a restoration unit that restores a three-dimensional holographic image by irradiating the hologram with a light source, an image sensing unit that senses a depth information image of the restored holographic image, and an analysis display unit that analyzes a depth quality of the holographic image, based on the sensed depth information image, and the image sensing unit uses a lensless type of photosensor.

Apparatus for analyzing depth of holographic image and analyzing method thereof

Provided are a semiconductor device, a display panel, and a display device including the same. The semiconductor device includes a lower electrode on one side of a substrate, a spacer on another side of the substrate, a middle electrode on the spacer, a lower channel layer on portions of a sidewall of the spacer, the middle electrode, and the lower electrode, a lower gate insulating layer on the lower channel layer, a common gate electrode on the gate insulating layer, an upper gate insulating layer on the common gate electrode, an upper electrode on the spacer and the upper gate insulating layer of the middle electrode, an upper channel layer connected to the upper electrode and disposed on a sidewall of the upper gate insulating layer, and a contact electrode connected to a portion of the upper channel layer and passing through the lower gate insulating layer and the upper gate insulating layer outside the common gate electrode so as to be connected to the lower electrode.

Semiconductor device, display panel, and display device including the same

A hologram display device includes a light source unit that emits light, a spatial light modulator that modulates the light emitted from the light source unit, and a random pinhole panel. The random pinhole panel includes a plurality of pinholes of a random position or a random size and is arranged in line with an output part of the spatial light modulator. In the hologram display device and the method of manufacturing the hologram display device, a position and size of a random pinhole on the random pinhole are not limited to inside each pixel of the spatial light modulator.

Hologram display device and method for manufacturing the same

Provided is a light modulating device including a light modulating unit provided on a substrate, a driving unit electrically connected to the light modulating unit and configured to drive the light modulating unit, and a cover disposed on the light modulating unit and configured to seal the light modulating unit, wherein the light modulating unit comprises an electrochromic device.

Light modulation device

Provided is a gate driving circuit. The gate driving circuit includes an ith modulation circuit and an ith line selection circuit (where i is a natural number greater than 1). The ith modulation circuit outputs an ith modulation voltage to an ith line selection circuit based on received first to third control signals. The ith line selection circuit includes a memory transistor that is turned on or turned off according to a level of the received ith modulation voltage.

Gate driving circuit and organic light emitting display device including the same

Provided is a display device. The display device includes a lower display element where a substrate, a first lower electrode, a liquid crystal part, and a second lower electrode are sequentially stacked, an upper display element stacked vertical to the lower display element, where a first upper electrode, a light emitting part, a second upper electrode, and a protective part are sequentially stacked, and a middle part configured to deliver a driving signal to the lower and upper display elements, between the lower and upper display elements.

Display device and method of fabricating the same

Provided are a display device, a method of fabricating the display device, and a method of fabricating an image sensor device. The method of fabricating the display device includes preparing a substrate including a cell array area and a peripheral circuit area, forming a silicon layer on the peripheral circuit area of the substrate, forming oxide layers on the cell array area and the peripheral circuit area of the substrate, forming gate dielectric layers on the silicon layer and the oxide layers, forming the gate electrodes on the gate dielectric layers, wherein the gate electrodes expose both ends of the silicon layer and both ends of the oxide layers, and injecting dopant into both ends of the silicon layer and both ends of the oxide layers at the same time.

Display device, method of fabricating the same, and method of fabricating image sensor device

Provided is a display device and a method of manufacturing the same. The display device includes a reflective display part including a first cathode electrode and a first anode electrode and a liquid crystal layer, a light emitting display part including a second cathode electrode and a second anode electrode and a light emission film, and a thin film transistor part being electrically connected to the first and second anode electrodes. The light emitting display part further includes a bank disposed on one side of the second anode electrode between the second anode electrode and the light emission film.

Display device and method of manufacturing the same

Growing community of inventors

Daejeon, South Korea

Jong-Heon Yang