Samsung Electronics Co., Ltd.

Georgia Tech Research Corporation

Yonsei University

Jong-han Kim

Jeong-hyuk Choi

Yong-Xing Zhou

Chang-Ho Lee

Jae-Hong Kim

Jun-Jin Kong

Tae-Hee Lee

Joy Laskar

Seong-soo Lee

Dong-jun Lee

Seung-Hwan Song

Dong-Hyuk Chae

Sang-hyun Lee

Byung-Jun Park

Young-Hwan Lee

Jong-Ae Park

Sang-Hyun Woo

Dong-woo Kim

Dae-Sik Hong

Kyoung-Lae Cho

Yong-June Kim

Han-woong Yoo

Hee-seok Eun

Ji-Hyung Kim

Joon-sang Ryu

Sebastien Nuttinck

Han-kyeol Shin

Kwon-yeol Park

Rajarshi Mukhopadhy

A wireless communication with modulation and demodulation set based on channel information is disclosed. An operating method of a first wireless communication device includes: transmitting a pilot signal via a wireless channel to a second wireless communication device; receiving channel state information, estimated by and transmitted from the second wireless communication device in response to the pilot signal, the channel state information including amplitude information and phase information of a wireless channel; setting a modulation method for data transmission based on the amplitude information and the phase information of the wireless channel; generating modulated data based on the modulation method; and transmitting the modulated data via the wireless channel.

Wireless communication with modulation and demodulation set based on channel information

A method of automatically generating a source code for implementing a function in hardware according to specifications defining a communication protocol includes: obtaining input data including the specifications; preprocessing the input data by extracting a table including a plurality of fields from the input data and classifying the table; generating structured data by performing lexical analysis on values of the plurality of fields according to a desired rule; and generating the source code from the structured data.

Method, system and apparatus for generating source code from table and using the same

The flash memory device includes a control logic circuit and a bit level conversion logic circuit. The control logic circuit programs first through Nbits of data in a memory cell array of the N-bit MLC flash memory device or reads the first through Nbits of the data from the memory cell array in response to one of a program command and a read command. The bit level conversion control logic circuit, after the first through Nbits of the data are completely programmed or read, programs or reads an (N+1)bit of the data in response to a control signal. The bit level conversion control logic circuit converts voltage levels of voltages, which are used for programming or reading the first through Nbits of the data, to program or read for 2cell distributions of 2cell distributions corresponding to the (N+1)bit of the data and then programs or reads for other 2cell distributions.

Flash memory device, programming and reading methods performed in the same

A method and apparatus for transmitting a preamble for frame synchronization and channel estimation in a MIMO-OFDM communication system are provided. An OFDM communication system using Q transmit antennas generates a base preamble sequence including a CP and an orthogonal sequence. If Q&#x2266;a predetermined number M, a preamble sequence for a kth antenna is S(t&#x2212;(k&#x2212;1)T/M). If Q&#x3e;M and k&#x2266;M, the preamble sequence transmitted for the kth antenna is S(t&#x2212;(k&#x2212;1)T/M). If Q&#x3e;M and k&#x3e;M, the preamble sequence for the kth antenna is (&#x2212;1)S(t&#x2212;(k&#x2212;M&#x2212;1)T/M). Here, S(t) is the orthogonal sequence, T is the period of the orthogonal sequence, and PS is an index indicating a transmission period of the preamble sequence. The preamble sequences are at least twice transmitted from the Q transmit antennas.

Method and apparatus for transmitting and receiving a preamble for synchronization in a MIMO-OFDM communication system

A channel estimation method in a Multiple Input Multiple Output (MIMO) mobile communication system having a plurality of transmission antennas and a plurality of reception antennas is provided. In a method of transmitting, by a transmitter, channel estimation signals for channel estimation at a receiver, the transmission antennas transmit the same channel estimation signals for a first frame transmission duration, and transmit predetermined channel estimation signals corresponding to the number of the transmission antennas for a second frame transmission duration.

Channel estimation method in a MIMO wireless communication system

A method and apparatus for transmitting a preamble for frame synchronization and channel estimation in a MIMO-OFDM communication system are provided. An OFDM communication system using Q transmit antennas generates a base preamble sequence including a CP and an orthogonal sequence. If Q&#x2266; a predetermined number M, a preamble sequence for a kth antenna is S(t&#x2212;(k&#x2212;1)T/M). If Q&#x3e;M and k&#x2266;M the preamble sequence transmitted for the kth antenna is S(t&#x2212;(k&#x2212;1)T/M). If Q&#x3e;M and k&#x3e;M, the preamble sequence for the kth antenna is (&#x2212;1)S(t&#x2212;(k&#x2212;M&#x2212;1)T/M). Here, S(t) is the orthogonal sequence, T is the period of the orthogonal sequence, and PS is an index indicating a transmission period of the preamble sequence. The preamble sequences are at least twice transmitted from the Q transmit antennas.

Method of transmitting preamble for synchronization in a MIMO-OFDM communication system

An active inductor capable of tuning a self-resonant frequency, an inductance, a Q factor, and a peak Q frequency by applying a tunable feedback resistor to a cascode-grounded active inductor is disclosed. The tunable active inductor includes a first transistor having a source connected to a power supply voltage and a gate connected to first bias voltage; a second transistor having a drain connected to a drain of the first transistor and a gate connected to a second bias voltage; a third transistor having a drain connected to a source of the second transistor and a source connected to a ground voltage; a fourth transistor having a drain connected to a gate of the third transistor, a source connected to the ground voltage and a gate connected to a third bias voltage; a fifth transistor having a source connected to the drain of the fourth transistor and a drain connected to the power supply voltage.

Tunable active inductor

A nonvolatile memory device having a lightly doped source and a method for manufacturing the same are provided. In the nonvolatile memory device, a first insulating layer, a floating gate, a second insulating layer and a control gate are sequentially formed on a semiconductor substrate, and a drain, a lightly doped source and a highly doped source are formed around a surface of the semiconductor substrate. At this time, the highly doped source is shallower than the drain without being overlapped by the floating gate. Thus, the integration of the memory cell can be increased, and the trapping of electrons is reduced in the first insulating layer formed between the floating gate and the lightly doped source, to thereby enhance the characteristics of the memory cell.

Nonvolatile memory device and method for manufacturing the same

A nonvolatile memory device having a predetermined threshold voltage is disclosed. In the nonvolatile memory device comprising a gate electrode including a control gate, a floating gate and a gate insulating layer, a source region and a drain region, a threshold voltage of an initial state applied to a word line such that the floating gate is electrically neutral is set to the mean value between the threshold voltage of a programmed state and the threshold voltage of an erased state. Thus, the amount of negative charges passing through a tunnel oxide layer during a program operation is the same as the amount of positive charges passing through the tunnel oxide layer during an erase operation, and an electric field formed on the tunnel oxide layer is minimized. Thus, the generation of electron traps in the tunnel oxide layer is reduced even though the program or erase operations are repeated, to thereby suppress the loss of the charges stored in the floating gate. As a result, the reliability of the device can be enhanced.

Nonviolatile memory device having improved threshold voltages in erasing and programming operations

Growing community of inventors

Suwon-si, South Korea

Jong-han Kim