Samsung Electronics Co., Ltd.

Hynix Semiconductor Inc.

Jong Hak Baek

Yun Seung Shin

Oh-Kyong Kwon

Yoon Kyung Choi

A source driver and a display device having the same are provided. The source driver shares several outputs by using a time division method and has an analog voltage stored in a buffer supplied to each data line multiple times during a horizontal scanning interval. Accordingly, by supplying an analog voltage to a data line a first time in a first activation interval and supplying an analog voltage to a data line a second time in a second activation interval, a target voltage of each pixel may be achieved quickly and accurately.

Source driver and display device having the same

A light emitting pixel includes a first organic light emitting diode (OLED) and a capacitor supplying to the first OLED current generated by an electric charge corresponding to a difference between a first voltage supplied to a first electrode of the capacitor and a second voltage supplied to a second electrode of the capacitor. The light emitting pixel further include a second OLED to supply the first voltage to the first electrode. The light emitting pixel further includes a voltage supply device to supply the first voltage to the first electrode in response to the second voltage.

Light emitting pixel and apparatus for driving the same

A smart power device and method for fabricating the same is disclosed in which an impact ionization to a drain region is reduced thereby securing a wide SOA (Safe Operation Area) and improving current driving characteristics. Such a device includes a smart power device comprising: a second conduction type drift region formed in a first conduction type well region by having first, second and (optionally but preferably) third impurity regions corresponding to first, second, and third ion injections with first, second, and third ion injection energies and first, second, and third doses; a first conduction type Dwell region formed adjoining to the second conduction type drift region; a source region and a body contact region both formed in the first conductive type Dwell region; a drain region formed in the second conduction type drift region; an insulating structure formed on an entire surface; a gate electrode layer formed in the insulating structure; a field plate formed to one side of the gate electrode layer and over the second conduction type drift region; and a source electrode layer and a drain electrode layer in contact with the source region and the drain region, respectively.

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Seoul, South Korea

Jong Hak Baek