Skhynix Inc.

Amogreentech Co., Ltd.

Jong Eun Kim

Ho Young Kwak

Hyung June Yoon

Jong Chae Kim

Hoon Moo Choi

Jae Hyung Jang

Jae Won Lee

Jung Soon Shin

Seong Hee Park

Dong-Hyun Woo

Dae-Woo Kim

Hwi Chul Shin

Namil Kim

Changsu Park

Jae Hyung Seo

Disclosed is an image sensor including a plurality of column lines, a plurality of pixels coupled to the plurality of column lines, and configured to output a plurality of pixel signals to the plurality of column lines in response to first control signals, and a plurality of memory cells coupled to the plurality of column lines, and configured to output a plurality of convolution signals, in which a plurality of data signals are reflected in the plurality of pixel signals, to the plurality of column lines in response to second control signals.

Image sensor and operating method thereof

An image sensing device includes a first photoelectric conversion region structured to generate photocharges based on incident light, a first photogate disposed over the first photoelectric conversion region to collect photocharges generated by the first photoelectric conversion region, a first transfer gate disposed at one side of the first photogate to transmit the photocharges collected by the first photogate to a first floating diffusion region, a first photogate contact coupled to a first region of the first photogate, and a second photogate contact coupled to a second region of the first photogate that is located closer to the first transfer gate than the first region in the first photogate. The second region is more deeply etched than the first region.

Image sensing device

An image sensing device is provided to include a pixel array having a plurality of pixels arranged in a matrix shape. Each of the pixels includes: a control node configured to generate a hole current in a substrate; a detection node configured to capture photocharge migrated by the hole current, formed in a shape whose at least part is partially open, and disposed to surround the control node, and a low resistance region including a dielectric layer formed in the substrate, and disposed in the opening on of the detection node. The low resistance region includes an inner low resistance region disposed between the control node and the center of the pixel.

An image sensing device includes a photoelectric conversion region configured to generate photocharges, a photogate region configured to overlap the photoelectric conversion region and allow the photocharges to be collected in the photoelectric conversion region, and a transfer gate disposed adjacent to the photogate region in a first direction and configured to transmit the photocharges to a floating diffusion region. The photogate region includes a first photogate in which a length extending in a second direction is longer than a length of the photoelectric conversion region extending in the second direction, and a second photogate in which a length extending in the second direction is shorter than a length of the photoelectric conversion region extending in the second direction. The first photogate includes a recess region formed to contact the photoelectric conversion region, and extend vertically from one surface of a region where the photoelectric conversion region is located.

An image sensing device includes a pixel array configured to include a first pixel group and a second pixel group that are contiguous to each other, each of the first pixel group and second pixel group including a plurality of imaging pixels to convert light into pixel signals, and a light field lens array disposed over the pixel array to direct light to the imaging pixels and configured as a moveable structure that is operable to move between a first position and a second position in a horizontal direction by a predetermined distance corresponding to a width of the first pixel group or a width of the second pixel group, the light field lens array configured to include one or more lens regions each including a light field lens and one or more open regions formed without the light field lens to enable both light filed imaging and conventional imaging.

Image sensing device for acquiring a light field image

An image sensing device is provided to include a pixel array including unit pixel blocks that are arranged in a first direction and a second direction crossing the first direction, each unit pixel block configured to generate pixel signals in response to incident light reflected from a target object. The unit pixel block includes normal first pixel configured to receive a portion of the incident light at a first arrival time and generate a first pixel signal in response to the incident light, and a second pixel configured to receive another portion of the incident light at a second arrival time and generate a second pixel signal in response to the incident light. The second arrival time is later than the first arrival time.

An image sensing device is disclosed. The image sensing device includes a semiconductor substrate, a plurality of signal detectors, an insulation layer, and at least one gate. The semiconductor substrate includes a first surface and a second surface opposite to the first surface, and generates signal carriers in response to light incident upon the first surface. The signal detectors are formed on the semiconductor substrate and located closer to the second surface than the first surface of the semiconductor substrate, and detect the signal carriers using a difference in electric potential. The insulation layer is disposed at the second surface of the semiconductor substrate, and isolates the signal detectors from each other. The at least one gate is disposed at the insulation layer interposed between the signal detectors, and reflects light arriving at the second surface of the semiconductor substrate back to the semiconductor substrate.

An image sensing device including a noise blocking structure is disclosed. The image sensing device includes a semiconductor substrate structured to support a plurality of image pixels producing signals upon a detection of an incident light and a logic circuit configured to process signals produced by the image pixels are formed, and a noise blocking structure disposed at the semiconductor substrate and formed to surround the logic circuit is formed. The noise blocking structure includes a first blocking structure and a second blocking structure. The first blocking structure includes multiple portions spaced from one another, each of the multiple portions extending in a line without any bending portion. The second blocking structure are disposed between the multiple portions of the first blocking structure and include portions partially overlapping with the first blocking structure.

Image sensing device including noise blocking structure

An image sensing device including a noise blocking structure is disclosed. The image sensing device includes a semiconductor substrate structured to support a plurality of image pixels producing signals response to received incident light, a logic circuit configured to process the signals read out from the image pixels, and a noise blocking structure coupled to the logic circuit to reduce a noise generated by the logic circuit. The noise blocking structure formed to extend in a straight line without any bending portion in a first direction, and to pass through the semiconductor substrate in a second direction that is perpendicular to the first direction.

Provided is an image sensor having a pixel region including a plurality of pixel blocks disposed in a matrix form, outer address markers around the pixel region, interspaces between the plurality of pixel blocks, and inner address markers disposed in the interspaces.

Image sensor having outer and inner address markers

Provided are a heat dissipation unit for wireless charging and a wireless power charging module comprising the same. The heat dissipation unit for wireless charging, according to one exemplary embodiment of the present invention, is formed of a plate-shaped substrate layer having a predetermined area to discharge to the outside heat occurring during wireless charging, and comprises at least one slot having a predetermined length. By having at least one slot, the present invention can satisfy all properties required in a wireless charging method, which are charging efficiency and a heat dissipation effect.

Heat dissipation unit for wireless charging and wireless power charging module comprising same

A light field imaging device includes an image sensor having a plurality of pixels arranged two-dimensionally therein; a microlens array formed over the image sensor, the microlens array having a plurality of microlenses arranged two-dimensionally therein; and a plurality of support structures formed between the image sensor and the microlens array for providing an air gap therebetween.

Light field imaging device and method for fabricating the same

Provided is an image sensor. The image sensor may include a plurality of first lenses disposed on a substrate, and a plurality of second lenses disposed on a structure disposed on the substrate suitable for changing the distance between the first and second lenses from a first minimum distance wherein the image sensor operates in a first mode to a second maximum distance wherein the image sensor operates in a second mode.

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Gyeonggi-do, South Korea

Jong Eun Kim