Skhynix Inc.

Jong-Chul Lee

Byung-Jick Cho

Won-Ki Ju

Hyung-Dong Lee

Beom-Yong Kim

Hyo-June Kim

Seung-Beom Baek

Ja-Chun Ku

Sung-Kyu Min

Hyun-Kyu Kim

Kyung-Wan Kim

Jong-Gi Kim

Kyoo-Ho Jung

A threshold switching device may include: a first electrode layer; a second electrode layer; a first insulating layer interposed between the first and second electrode layers, and provided adjacent to the first electrode layer; and a second insulating layer interposed between the first and second electrode layers, and provided adjacent to the second electrode layer, wherein the first and second insulating layers contain a plurality of neutral defects, a concentration of the plurality of neutral defects being at a maximum along a first interface between the first insulating layer and the second insulating layer, and wherein the threshold switching device has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects.

Threshold switching device, method for fabricating the same and electronic device including the same

A threshold switching device may include: a first electrode layer; a second electrode layer; an insulating layer interposed between the first and second electrode layers and containing a plurality of neutral defects; and an additional insulating layer interposed between the insulating layer and one or each of the first and second electrode layers, and being substantially free from neutral defects, and wherein the threshold switching device has an ON or OFF state according to whether electrons are ejected from the plurality of neutral defects.

Threshold switching device and electronic device including the same

A semiconductor memory may include: a first stacked structure including a first word line disposed over a substrate and extended in a first direction, a first bit line disposed over the first word line and extended in a second direction crossing the first direction, and a first variable resistance layer interposed between the first word line and the first bit line; and a second stacked structure including a second bit line disposed over the first stacked structure and extended in the second direction, a second word line disposed over the second bit line and extended in the first direction, and a second variable resistance layer interposed between the second word line and the second bit line; and a first selecting element layer interposed between the first bit line and the second bit line.

Electronic device

An electronic device includes a semiconductor memory unit. The semiconductor memory unit includes a plurality of first lines extending in a first direction, a plurality of second lines extending in a second direction intersecting the first direction, and a plurality of variable resistance patterns that is positioned at intersections of the first lines and the second lines and disposed between the first lines and the second lines in a vertical direction. Each of the variable resistance patterns has an elongated shape in a plan view and a portion of each of the variable resistance patterns is disposed outside a region in which a corresponding first line and a corresponding second line overlap with each other.

Electronic device with variable resistive patterns

According to embodiments, a semiconductor memory may include: a variable resistance pattern disposed over a substrate and extended in a first direction; first and second structures including a plurality of interlayer dielectric layers and a plurality of conductive layers which are alternately stacked over the substrate, and contacted with one side surface and the other side surface of the variable resistance pattern, respectively, wherein the first stacked structure has a line shape extended in a first direction and the second stacked structure has a pillar shape; and a pillar-shaped conductive pattern contacted with one side surface of the second stacked structure, which is not contacted with the variable resistance pattern.

Growing community of inventors

Icheon, South Korea

Jong-Chul Lee