Skhynix Inc.

Other

Jong Chul Lee

Young Ho Lee

Seung Beom Baek

Min Yong Lee

Jongho Lee

Jin Ku Lee

Bo Min Park

An electronic device having a semiconductor memory device is provided. The semiconductor memory device may include a lower interlayer insulating layer having a hole; an upper interlayer insulating layer disposed on the lower interlayer insulating layer; and a memory cell stack including a lower element and an upper element, the lower element being confined to the hole of the lower interlayer insulating layer, the upper element being surrounded by the upper interlayer insulating layer. The lower element may include a lower electrode and a selection element pattern disposed on the lower electrode. The upper element may include a memory pattern disposed on the selection element pattern and an upper electrode disposed on the memory pattern.

Semiconductor memory device including a selection element pattern confined to a hole

A method of manufacturing a cross-point memory array device is disclosed. In the method, a substrate is provided. A plurality of first conductive line patterns are formed over the substrate. An insulating layer is formed over the first conductive line patterns. The insulating layer includes an insulative oxide. A plurality of switching film patterns are formed on the first conductive line patterns by selectively doping a plurality regions of the insulating layer. A plurality of memory structures are formed on the plurality of switching film patterns, respectively. A plurality of second conductive line patterns are formed on the plurality of memory structures.

Cross-point memory array device and method of manufacturing the same

A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a variable resistive layer formed on a semiconductor substrate in which a bottom structure is formed, a lower electrode formed on the variable resistive layer, a switching unit formed on the lower electrode, and an upper electrode formed on the switching unit.

Resistive memory device and fabrication method thereof

A method for fabricating a semiconductor device includes forming a first insulating layer in a first area of the semiconductor substrate, lowering a height of the semiconductor substrate in a second area and a height of the first insulating layer in the first area, selectively forming a sacrificial layer in the second area using the first insulating layer as a growth prevention layer, and forming a first semiconductor layer on the semiconductor substrate including the sacrificial layer.

Method for fabricating semiconductor device

A PCRAM device and a method of manufacturing the same are provided. The PCRAM device includes a semiconductor substrate, and a PN diode formed on the semiconductor substrate and including a layer interposed therein to suppress thermal diffusion of ions.

Phase-change random access memory and method of manufacturing the same

Disclosed herein is a gel-form lipstick dispenser which may discharge gel-form lipstick materials with very high viscosity safely.

Gel-form lipstick

A woman's shirts having an omasum-inner-wall like textile structure, defined as a bulbous unit above a planar base, to render desired elasticity to a shirt. The shirt of this invention is excellent in resilient elasticity, original shape retainability and shape stability. The shirts of this invention is free size, one size fitting all. The shirt is much lighter than average women's winter shirts. Thermal insulation is adequate. Packing size is much smaller than comparable women's winter wear. The material for these shirts is composed of wool and polyester which are treated with hand followed by heat treatment with heat and moisture to make the omasum-like structure. The shirts of this invention emphasize the bodyline of women's breast and decorates the line with embossing to render a more sensual appreance.

Growing community of inventors

Seoul, South Korea

Jong Chul Lee