Samsung Electronics Co., Ltd.

Jong-Chol Kim

Hyun-Woo Kim

Krishna Bhuwalka

Seong-Je Kim

Keun-Ho Lee

Ui-hui Kwon

Jong-wook Jeon

Hyo-Eun Park

A semiconductor device includes a plurality of channels, source/drain layers, and a gate structure. The channels are sequentially stacked on a substrate and are spaced apart from each other in a first direction perpendicular to a top surface of the substrate. The source/drain layers are connected to the channels and are at opposite sides of the channels in a second direction parallel to the top surface of the substrate. The gate structure encloses the channels. The channels have different lengths in the second direction and different thicknesses in the first direction.

Semiconductor device

A simulation method includes receiving a netlist describing a plurality of devices, performing an arithmetic operation by using values of random telegraph signal (RTS) noise factors respectively corresponding to the plurality of devices, generating an RTS model corresponding to each of the devices, based on a result of the arithmetic operation, and generating a netlist in which the RTS model is reflected.

Circuit design method and simulation method based on random telegraph signal noise

Growing community of inventors

Seoul, South Korea

Jong-Chol Kim